| PART |
Description |
Maker |
| SI2304DS |
30 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V
|
TY Semiconductor Co., Ltd
|
| KDB3672 |
rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V
|
TY Semiconductor Co., L...
|
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| BUZ72L BUZ72LC67078-S1327-A2 BUZ72LSMD |
Power MOSFET, 100V, D²PAK , RDSon=0.2 Ohm, 10A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL
SIPMOS Power Transistor
Single-coil dual-output step-down DC/DC converter for digital base band and multimedia processor supply
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| 1N957B ON0020 1N958B 1N968B 1N965B 1N963B 1N961B |
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35灏??,10V榻?撼?靛?锛?????绾崇ǔ??????)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,12V齐纳电压，玻璃齐纳稳压二极管) 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,15]V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,20V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,7.5V齐纳电压，玻璃齐纳稳压二极管)
From old datasheet system
|
ON Semiconductor
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| FDMA1430JP |
Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
|
Fairchild Semiconductor
|
| SI8405DB |
12-V P-Channel 1.8-V (G-S) MOSFET 12 - V P -通道.8 VGS）的MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| FDS89161LZ |
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
|
Fairchild Semiconductor
|
| 2SK3367 |
Low on-resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 18 A)
|
TY Semiconductor Co., Ltd
|
| SI3433 SI3433DV |
P-Channel 1.8-V (G-S) MOSFET P通道.8 VGS）的MOSFET
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Siliconix
|
|
