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For charge Found Datasheets File :: 82784    Search Time::4.829ms    
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    Panasonic Battery Group
Part No. UR18650Y
OCR Text ...ly any guarantee or warranty. charge characteristics cycle life characteristics discharge characteristics (by temperature) discharge characteristics (by rate of discharge) features & benefits dimensions specifications for m...
Description Lithium Ion
   Lithium Ion

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    71061 SI4831DY

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VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. 71061 SI4831DY
OCR Text ... Unit Dynamicb Total Gate charge Gate-Source charge Gate-Drain charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.7 A, di/dt = 100 A/ms VDD ...
Description P-Channel 30-V (D-S) MOSFET with Schottky Diode

File Size 67.11K  /  6 Page

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    ADP3404ARU ADP3404 ADP3404ARU-REEL ANALOGDEVICESINC-ADP3404ARUZ-REEL

AD[Analog Devices]
ANALOG DEVICES INC
Part No. ADP3404ARU ADP3404 ADP3404ARU-REEL ANALOGDEVICESINC-ADP3404ARUZ-REEL
OCR Text ...p Capacitor for Real-Time Clock charge Pump and Logic Level Translators for 3 V and 5 V GSM SIM Modules Narrow Body 4.4 mm 28-Lead TSSOP Package APPLICATIONS GSM/DCS/PCS Handsets TeleMatic Systems ICO/Iridium Terminals GSM Power Manageme...
Description    GSM Power Management System
80-Lead Mixed Signal DSP with 7, 10-bit Analog Input Channels
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO28

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    UPA2631T1R UPA2631T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2631T1R UPA2631T1R-E2-AX
OCR Text ... pulsed test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% v gs 10% 0 v ds ( ? ) 90% 90% t d(on) t r t d(off) t f...
Description P-CHANNEL MOSFET -20 V, -8.0 A, 32 m

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    UPA2600T1R UPA2600T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2600T1R UPA2600T1R-E2-AX
OCR Text ... pulsed test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t o...
Description N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m

File Size 234.58K  /  7 Page

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    AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA

ETC
ANACHIP[Anachip Corp]
Part No. AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
OCR Text ... Gate-Source Leakage Total Gate charge (Note 3) Gate-Source charge Gate-Drain ("Miller") charge Turn-On Delay Time (Note 3) Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Condi...
Description P-Channel 30-V (D-S) MOSFET
P-Channel Enhancement Mode Power MOSFET

File Size 245.21K  /  6 Page

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    TOSHIBA
Part No. TPN7R506NH
OCR Text ...-speed switching (2) small gate charge: q sw = 9.2 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 6.0 m ? (typ.) (v gs = 10 v) (4) low leakage current: i dss = 10 a (max) (v ds = 60 v) (5) enhancement mode: v th = 2.0 to ...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 237.68K  /  9 Page

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    APM4835 APM4835KC-TR APM4835KC-TU

Anpec Electronics Corporation
ETC[ETC]
ANPEC[Anpec Electronics Coropration]
http://
Part No. APM4835 APM4835KC-TR APM4835KC-TU
OCR Text ...iode Forward Voltage Total Gate charge Gate-Source charge Gate-Drain charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance b b VGS =0V, ID= -...
Description P-Channel Enhancement Mode MOSFET

File Size 125.16K  /  9 Page

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    TOSHIBA
Part No. TPC6130
OCR Text ...it 6.3. 6.3. 6.3. 6.3. gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specif...
Description Power MOSFET (P-ch single)

File Size 221.81K  /  9 Page

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    TOSHIBA
Part No. TK70X06K3
OCR Text ...0 s ? 48 ? ns total gate charge (gate-source plus gate-drain) q g ? 62 ? gate-source charge q gs ? 34 ? gate-drain (?miller?) charge q gd v dd 48 v, v gs = 10 v, i d = 70 a ? 28 ? nc source-drain ratings an...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 209.55K  /  6 Page

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