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    BCX69 BCX69-25 BCX69-16 BCX69-10

INFINEON[Infineon Technologies AG]
Part No. BCX69 BCX69-25 BCX69-16 BCX69-10
Description PNP Silicon AF Transistors 自动对焦进步党硅晶体
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
General Purpose Transistors - SOT89; vceo=20V; hFE=85..375
General Purpose Transistors - SOT89; vceo=20V; hFE=160..375
General Purpose Transistors - SOT89; vceo=20V; hFE=100..250

File Size 44.48K  /  4 Page

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    CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB1548AQ CFB1548P CFD2374A CFD2374AP CFD2374P CFD2374AQ

Continental Device India Limited
Part No. CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB1548AQ CFB1548P CFD2374A CFD2374AP CFD2374P CFD2374AQ
Description 2.000W Power NPN Plastic Leaded Transistor. 60V vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548
2.000W Power NPN Plastic Leaded Transistor. 60V vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q
2.000W Power PNP Plastic Leaded Transistor. 60V vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374
2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A
2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP
2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ
2.000W Power PNP Plastic Leaded Transistor. 60V vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P
2.000W Power NPN Plastic Leaded Transistor. 80V vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A
2.000W Power NPN Plastic Leaded Transistor. 80V vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP
2.000W Power NPN Plastic Leaded Transistor. 60V vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P
2.000W Power NPN Plastic Leaded Transistor. 80V vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ

File Size 147.25K  /  3 Page

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    CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264Q CFB940Q CFD1264P CFB940P CFD1264AP

Continental Device India Limited
Part No. CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264Q CFB940Q CFD1264P CFB940P CFD1264AP
Description 2.000W Power PNP Plastic Leaded Transistor. 150V vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP

File Size 146.53K  /  3 Page

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    CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB949P CFB949AR CFD1275Q

Continental Device India Limited
Part No. CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB949P CFB949AR CFD1275Q
Description 2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q

File Size 147.20K  /  3 Page

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    TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662
Description NPN Silicon RF Power Transistor(Ic:16 A,Vcbo: 65 V,vceo: 33 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:16 A,Vcbo: 65 V,vceo: 33 V,Vebo: 3.5 V))

File Size 17.20K  /  1 Page

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    ASI10599 HF100-12

Advanced Semiconductor, Inc.
Part No. ASI10599 HF100-12
Description NPN Silicon RF Power Transistor(Ic:20 A,Vcbo: 36 V,vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:20 A,Vcbo: 36 V,vceo: 18 V,Vebo: 4.0 V))

File Size 16.09K  /  1 Page

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    ASI10749 VMB80-28S VHB25-12S

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10749 VMB80-28S VHB25-12S
Description NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,vceo: 36 V,Vebo: 4.0 V))

File Size 15.55K  /  1 Page

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    ASI10654 TVV005

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10654 TVV005
Description NPN Silicon RF Power Transistor(Ic:4.0 A,Vcbo: 55 V,vceo: 30 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.0 A,Vcbo: 55 V,vceo: 30 V,Vebo: 4.0 V))

File Size 18.47K  /  1 Page

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    ASI10728 VHB50-28F ASI1001 ASI10522 ASI10534 ASI10596 ASI2302 HF50-12F

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10728 VHB50-28F ASI1001 ASI10522 ASI10534 ASI10596 ASI2302 HF50-12F
Description NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,vceo: 35 V,Vebo: 4.0 V))

File Size 17.28K  /  1 Page

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    CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY CSA968AO

Continental Device India Limited
Part No. CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY CSA968AO
Description 25.000W Medium Power PNP Plastic Leaded Transistor. 180V vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO
25.000W Medium Power PNP Plastic Leaded Transistor. 180V vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO
25.000W Medium Power PNP Plastic Leaded Transistor. 200V vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B
25.000W Medium Power PNP Plastic Leaded Transistor. 160V vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238
PNP PLASTIC POWER TRANSISTORS
Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes

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