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  samwin. Datasheet PDF File

For samwin. Found Datasheets File :: 77    Search Time::1.5ms    
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    SW630

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ETC[ETC]
Part No. SW630
OCR Text SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W SW630 This power MOSFET is produced in CHMC with advanced VDMOS technology of...
Description N-Channel MOSFET

File Size 653.05K  /  6 Page

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    SW50N06

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Part No. SW50N06
OCR Text SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc : 130 W SW50N06 General Description This power MOSFET is produced in CHMC with advanced VDMOS process, p...
Description N-CHANNEL MOSFET

File Size 339.83K  /  6 Page

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    SW740

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ETC
Part No. SW740
OCR Text SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 0.55 ohm : 10A : 45 nc : 134 W SW740 This power MOSFET is produced with advanced VDMOS process, planar strip...
Description N-Channel MOSFET

File Size 378.28K  /  6 Page

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    SW840

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Part No. SW840
OCR Text SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 0.85 ohm : 8.5 A : 36 nc : 125 W SW840 This power MOSFET is produced with advanced VDMOS process, planar str...
Description N-Channel MOSFET

File Size 84.86K  /  6 Page

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    SW2N60

Samwin
Electronic Theatre Controls, Inc.
ETC[ETC]
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Part No. SW2N60
OCR Text SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 5.0 ohm : 2.0 A : 16 nc : 50 W SW2N60 This power MOSFET is produced in CHMC with advanced VDMOS technology o...
Description This power MOSFET is produced in CHMC with advanced VDMOS technology of samwin. 这功率MOSFET生产CHMC先进VDMOS器件SAMWIN技术
From old datasheet system

File Size 502.43K  /  6 Page

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    SW4N60

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ETC[ETC]
Part No. SW4N60
OCR Text SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W SW4N60 This power MOSFET is produced in CHMC with advanced VDMOS technology o...
Description N-Channel MOSFET

File Size 111.77K  /  6 Page

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    ETC[ETC]
Part No. SW634
OCR Text SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 250 V : 0.45 ohm : 8.5 A : 28 nc : 72 W SW634 This power MOSFET is produced in CHMC with advanced VDMOS technology o...
Description N-Channel MOSFET

File Size 680.14K  /  6 Page

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    ETC[ETC]
Part No. SW640
OCR Text SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W SW640 This power MOSFET is produced in SAMWIN with advanced VDMOS process, pl...
Description N-Channel MOSFET

File Size 569.15K  /  5 Page

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    SW730

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ETC[ETC]
Part No. SW730
OCR Text SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 400 V : 1.0 ohm : 6.0 A : 32 nc : 73 W SW730 This power MOSFET is produced in CHMC with advanced VDMOS technology of...
Description N-Channel MOSFET

File Size 684.39K  /  6 Page

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    SW7N60

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ETC[ETC]
Part No. SW7N60
OCR Text SAMWIN Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 1 ohm : 7.0 A : 30 nc : 142 W SW7N60 General Description This power MOSFET is produced in CHMC with advanced VDMOS process, pla...
Description N-Channel MOSFET

File Size 298.57K  /  5 Page

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For samwin. Found Datasheets File :: 77    Search Time::1.5ms    
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