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    Renesas Electronics Corporation.
Part No. H83069R-ZTAT RENESASTECHNOLOGYCORP.-H83069R-ZTAT
Description 16-BIT SINGLE-CHIP MICROCOMPUTER
File Size 4,956.70K  /  1003 Page

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Renesas Electronics Corporation
Part No. RTK5RX65N0S01000BE
Description Renesas RX65N Cloud Kit
Tech specs 　 　

Official Product Page

HUA FENG CIRCUIT





    RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. R1LV1616R_07 R1LV1616R R1LV1616RBG-5SI R1LV1616RBG-5SR R1LV1616RBG-7SI R1LV1616RBG-7SR R1LV1616RBG-8SI R1LV1616RBG-8SR R1LV1616RSA-5SI R1LV1616RSA-5SR R1LV1616RSA-7SI R1LV1616RSA-7SR R1LV1616RSA-8SI R1LV1616RSA-8SR R1LV1616RSD-5SI R1LV1616RSD-5SR R1LV1616RSD-7SI R1LV1616RSD-7SR R1LV1616RSD-8SI R1LV1616RSD-8SR RENESASTECHNOLOGYCORP.-R1LV1616RSD-5SR
Description 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) 16Mb的先进LPSRAM00万wordx16bit / 200wordx8bit
File Size 102.26K  /  16 Page

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Renesas Electronics Corporation
Part No. RTK5RX65N0S00000BE
Description Renesas RX65N Cloud Kit
Tech specs 　 　

Official Product Page

    HD74LV2GT125A HD74LV2GT125AUSE RENESASTECHNOLOGYCORP.-HD74LV2GT125A

RENESAS[Renesas Electronics Corporation]
Part No. HD74LV2GT125A HD74LV2GT125AUSE RENESASTECHNOLOGYCORP.-HD74LV2GT125A
Description Dual Bus Buffer with 3-state Output / CMOS Logic Level Shifter
Dual Bus Buffer with 3?state Output / CMOS Logic Level Shifter
Standard IC>General-Purpose Logics>Uni-Logic 74LV-A LVT-A 1G/1GW/2G Series>74LV2G-A LV2GT-A
File Size 88.35K  /  9 Page

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Renesas Electronics Corporation
Part No. R0K50562GS000BE
Description Renesas Starter Kit for RX62G
Tech specs 　 　

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    HZM7.5NB HZM7.5NB2 HZM7.5NB3 HZM4.3NB HZM2.2NB HZM4.3N HZM4.3NB1 HZM4.3NB2 HZM4.3NB3 HZM4.7N HZM4.7NB HZM4.7NB1 HZM4.7NB

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NXP Semiconductors N.V.
Renesas Electronics, Corp.
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
Part No. HZM7.5NB HZM7.5NB2 HZM7.5NB3 HZM4.3NB HZM2.2NB HZM4.3N HZM4.3NB1 HZM4.3NB2 HZM4.3NB3 HZM4.7N HZM4.7NB HZM4.7NB1 HZM4.7NB2 HZM4.7NB3 HZM15N HZM15NB HZM15NB1 HZM15NB2 HZM15NB3 HZM9.1NB3 HZM8.2NB1 HZM8.2NB2 HZM6.2NB2 HZM6.2NB1 HZM5.6NB2 HZM5.1NB2 HZM5.1NB1 HZM5.1NB3 HZM36NB HZM3.6NB2 HZM3.3NB2 HZM2.0NB HZM22NB2 HZM22NB1 HZM20NB2 HZM2.7NB2 HZM2.7NB1 HZM2.4NB HZM18N HZM18NB HZM18NB1 HZM18NB2 HZM18NB3 HZM16N HZM16NB HZM16NB1 HZM16NB2 HZM16NB3 HZM12NB1 HZM10NB3 HZM10NB1 5M15N HZM10N HZM10NB HZM10NB2 HZM11N HZM11NB HZM11NB1 HZM11NB2 HZM11NB3 HZM12N HZM12NB HZM12NB2 HZM12NB3 HZM13N HZM13NB HZM13NB1 HZM13NB2 HZM13NB3 HZM2.0N HZM2.2N HZM2.4N HZM2.7N HZM2.7NB HZM20N HZM20NB HZM20NB1 HZM20NB3 HZM22N HZM22NB HZM22NB3 HZM24N HZM24NB HZM24NB1 HZM24NB2 HZM24NB3 HZM27N HZM27NB HZM27NB1 HZM27NB2 HZM27NB3 HZM3.0N HZM3.0NB HZM3.0NB1 HZM3.0NB2 HZM3.3N HZM3.3NB HZM3.3NB1 HZM3.6N HZM3.6NB HZM3.6NB1 HZM3.9N HZM3.9NB HZM3.9NB1 HZM3.9NB2 HZM30N HZM30NB HZM30NB1 HZM30NB2 HZM30NB3 HZM33N HZM33NB HZM33NB1 HZM33NB2 HZM33NB3 HZM36N HZM36NB1 HZM36NB2 HZM36NB3 HZM5.1N HZM5.1NB HZM5.6N HZM5.6NB HZM5.6NB1 HZM5.6NB3 HZM6.2N HZM6.2NB HZM6.2NB3 HZM6.8N HZM6.8NB HZM6.8NB1 HZM6.8NB2 HZM6.8NB3 HZM7.5N HZM7.5NB1 HZM8.2N HZM
Description 10 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
7.5 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
12 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
9.1 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
8.2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
3.6 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MPAK-3
2.4 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MPAK-3
2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MPAK-3
2 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MPAK-3
3.3 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MPAK-3
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
RF/Coaxial Connector; RF Coax Type:BNC; Contact Termination:Twist On; Body Style:Straight Plug; RG Cable Type:59, 62, 71, 140, 210 RoHS Compliant: Yes
Diodes>Zener
20 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
   Silicon Epitaxial Planar Zener Diode for Stabilizer
File Size 188.67K  /  8 Page

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Renesas Electronics Corporation
Part No. RTK50566T0S00000BE
Description Renesas Starter Kit for RX66T
Tech specs 　 　

Official Product Page

    Renesas Electronics Corporation.
Renesas Electronics, Corp.
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Part No. 3885 M38851F3-HP M38850F3-HP M38851F1-HP M38850F1-HP M38852F1-HP M38851F5-HP M38850F5-HP M38859FD-HP M38858FD-HP M38854FD-HP M38857FD-HP M38851FD-HP M38852FD-HP M38853FD-HP M38855FD-HP M38856FD-HP M38858MB-XXXHP M38854MB-XXXHP M38853MB-XXXHP M38857MB-XXXHP M38850FB-HP M38850MD-XXXHP M38851F7-HP M38857M4-XXXHP M38857M8-XXXHP M38857M6-XXXHP M38859M9-XXXHP M38852F3-HP M38853FB-HP M38856F3-HP M38851FF-HP M38855MD-XXXHP M38851M8-XXXHP M38858F1-HP M38854M8-XXXHP M38850FF-HP M38855M5-XXXHP RENESASTECHNOLOGYCORP.-M38851MA-XXXHP RENESASTECHNOLOGYCORP.-M38853MD-XXXHP M38853M7-XXXHP M38853MA-XXXHP M38853M6-XXXHP RENESASTECHNOLOGYCORP.-M38858F2-HP M38855FB-HP M38851F4-HP RENESASTECHNOLOGYCORP.-M38859F7-HP M38851FB-HP M38852FB-HP M38854FB-HP M38856FB-HP M38858FB-HP M38852M3-XXXHP M38852MA-XXXHP M38852MC-XXXHP M38852M2-XXXHP M38852M4-XXXHP M38852M6-XXXHP M38852M8-XXXHP M38852M9-XXXHP M38852ME-XXXHP M38855M6-XXXHP M38857M9-XXXHP
Description 300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
Single 2.7-V High Slew Rate Rail-to-Rail Output Operational Amplifier 5-SOT-23 -40 to 125
CAP 680PF 50V 10% X7R SMD-0402 TR-13 PLATED-NI/SN
Single 2.7-V High Slew Rate Rail-to-Rail Output Operational Amplifier 8-SOIC -40 to 125
PLCC Socket; Number of Contacts:32; Terminal Type:PCB Surface Mount; Contact Plating:Tin Over Nickel; Mounting Type:Surface Mount
ACCU-F/P
CRYSTAL, SM, CX-49G, 8MHZ; Frequency, output:8000kHz; Accuracy: /-50ppm; Temperature, operating range:-10(degree C) to 70(degree C); Capacitance, load:12pF; Crystal case type:10.8 x 4.5; Series:CX49GFWB; Temperature RoHS Compliant: Yes
Automotive Catalog 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier With Shutdown 5-SOT-23 -40 to 125
Dual 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier 8-PDIP -40 to 125
Dual 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier 8-SOIC -40 to 125
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
Dual 2.7-V High Slew Rate Rail-To-Rail Output Operational Amplifier 8-MSOP 0 to 70 单芯位CMOS微机
Dual 2.7-V High Slew Rate Rail-To-Rail Output Operational Amplifier 8-TSSOP -40 to 125 单芯位CMOS微机
Dual 2.7-V High Slew Rate Rail-To-Rail Output Operational Amplifier 8-SOIC
File Size 1,587.57K  /  103 Page

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Renesas Electronics Corporation
Part No. SH7124-Starter-Kit
Description Renesas Starter Kit for SH7124
Tech specs 　 　

Official Product Page

    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. 38B5 M38B55M1XXXFS M38B55M1XXXFP M38B50M7XXXFP M38B52MFXXXFP M38B50E5XXXFP M38B54M2XXXFS M38B54M2XXXFP M38B53E6XXXFS M38B54M8XXXFP M38B54MEXXXFP M38B50MEXXXFS M38B53MEXXXFS M38B52MEXXXFS M38B51MEXXXFP M38B55MEXXXFS M38B54MEXXXFS RENESASTECHNOLOGYCORP.-M38B53EEXXXFS
Description SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
File Size 868.67K  /  70 Page

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Renesas Electronics Corporation
Part No. RTK5572MNHS00000BE
Description Renesas Starter Kit+ for RX72M
Tech specs 　 　

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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. R5F21264KXXXFP R5F21266JXXXFP R5F21264SNXXXFP R5F21266SDXXXFP R5F21266KXXXFP R5F21266SNXXXFP R5F21264JXXXFP R5F21265SNXXXFP R5F21265SDXXXFP R5F21262SNXXXFP R5F21262SDXXXFP R5F21274SDXXXFP R5F21276JXXXFP R5F21275SNXXXFP 74SNFP R5F21264JFP RENESASTECHNOLOGYCORP.-R5F21264JXXXFP R5F21274SDFP
Description SINGLE-CHIP 16-BIT CMOS MCU 单片16位CMOS微控制器
File Size 568.10K  /  73 Page

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Renesas Electronics Corporation
Part No. R0K5562N0S000BE
Description Renesas Starter Kit+ for RX62N
Tech specs 　 　

Official Product Page

    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M38232G4-XXXFP M38232G4-XXXHP M38233G4-XXXFP M38233G4-XXXHP M38234G4-XXXFP M38234G4-XXXHP M38235G4-XXXFP M38230G6-XXXFP M38230G6-XXXHP M38231G6-XXXFP M38231G6-XXXHP M38232G6-XXXFP M38232G6-XXXHP M38233G6-XXXFP M38233G6-XXXHP M38234G6-XXXFP M38234G6-XXXHP M38235G6-XXXFP M38235G6-XXXHP M38236G6-XXXHP M38237G6-XXXFP M38237G6-XXXHP M38238G6-XXXFP M38230G7-XXXFP M38230G7-XXXHP M38231G7-XXXFP M38231G7-XXXHP M38232G7-XXXFP M38232G7-XXXHP M38233G7-XXXFP M38233G7-XXXHP M38234G7-XXXFP M38234G7-XXXHP M38235G7-XXXFP M38235G7-XXXHP M38236G7-XXXFP M38236G7-XXXHP M38237G7-XXXFP M38237G7-XXXHP M38238G7-XXXFP M38238G7-XXXHP M38239G7-XXXFP M38239G7-XXXHP M38230G8-XXXFP M38230G8-XXXHP M38231G8-XXXFP M38231G8-XXXHP M38232G8-XXXFP M38232G8-XXXHP M38233G8-XXXFP M38233G8-XXXHP M38234G8-XXXFP M38234G8-XXXHP M38235G8-XXXFP M38235G8-XXXHP M38236G8-XXXFP M38236G8-XXXHP M38237G8-XXXFP M38237G8-XXXHP M38238G8-XXXFP M38238G8-XXXHP M38230GA-XXXFP M38230GA-XXXHP M38231GA-XXXFP M38231GA-XXXHP M38232GA-XXXFP M38232GA-XXXHP M38233GA-XXXFP M38233GA-XXXHP M38234GA-XXXFP M38234GA-XXXHP M38235GA-XXXFP M38235GA-XXXHP M38236GA-XXXFP M38236GA-XXXHP M38237GA-XXXFP M38237GA-XXXHP
Description 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
File Size 901.80K  /  76 Page

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Renesas Electronics Corporation
Part No. SH7269-Starter-Kit-Plus
Description Renesas Starter Kit+ for SH7269
Tech specs 　 　

Official Product Page

    M38127M8-XXXFP M38127M8-XXXFS M38127M8-XXXSP M38127M8-XXXSS M38122M2-XXXFP M38122M2-XXXFS M38122M2-XXXSP M38122M2-XXXSS

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RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
Mitsubishi Electric, Corp.
Part No. M38127M8-XXXFP M38127M8-XXXFS M38127M8-XXXSP M38127M8-XXXSS M38122M2-XXXFP M38122M2-XXXFS M38122M2-XXXSP M38122M2-XXXSS M38123M6-XXXFP M38123M6-XXXFS M38123M6-XXXSP M38123M6-XXXSS M38123M4 M38127EC-XXXFP M38127EC-XXXFS M38127EC-XXXSP M38127EC-XXXSS M38123XX M38123M4-XXXFP M38123M4-XXXFS M38123M4-XXXSP M38123M4-XXXSS M38122E1-XXXFP M38122E1-XXXFS M38122E1-XXXSP M38122E1-XXXSS M38122E2-XXXFP M38122E2-XXXFS M38122E2-XXXSP M38122E2-XXXSS M38122E3-XXXFP M38122E3-XXXFS M38122E3-XXXSP M38122E3-XXXSS M38122E4-XXXFP M38122E4-XXXFS M38122E4-XXXSP M38122E4-XXXSS M38122E5-XXXFP M38122E5-XXXFS M38122E5-XXXSP M38122E5-XXXSS M38122E6-XXXFP M38122E6-XXXFS M38122E6-XXXSP M38122E6-XXXSS M38122E7-XXXFP M38122E7-XXXFS M38122E7-XXXSP M38122E7-XXXSS M38122E8-XXXFP M38122E8-XXXFS M38123E6-XXXFP M38123E6-XXXFS M38123E6-XXXSP M38123E6-XXXSS M38127MF-XXXSS M38120E1-XXXFP M38120E1-XXXFS M38120E1-XXXSP M38120E1-XXXSS M38120E2-XXXFP M38120E2-XXXFS M38120E2-XXXSP M38120E2-XXXSS M38120E3-XXXFP M38120E3-XXXFS M38120E3-XXXSP M38120E3-XXXSS M38120E4-XXXFP M38120E4-XXXFS M38120E4-XXXSP M38120E4-XXXSS M38120E5-XXXFP M38120E5-XXXFS M38120E5-XXXSS M38120E6-XXXFP M38120E6-XXXFS M38120E6-XXXSP M38120E6-XXXSS M38120E7-XXX
Description 8-BIT, MROM, 6.3 MHz, MICROCONTROLLER, PDIP64
8-BIT, MROM, 6.3 MHz, MICROCONTROLLER, PQFP64
Microfast molded cordsets RoHS Compliant: Yes
10-uA/Channel, 160kHz, RRIO Dual Op Amp 8-SOIC -40 to 125
10-uA/Channel, 160kHz, RRIO Op Amp 8-SOIC -40 to 125
LED 624NM OVAL RED 5MM
LED 470NM OVAL BLUE 4MM
TFT 64.5 inch (163.9 cm) LVDS
Low Voltage Rail-To-Rail Low Power Advanced LinCMOS(TM) Dual Operational Amplifier 10-CFP -55 to 125
Quad Rail-To-Rail Low-Voltage Low-Power Operational Amplifier 14-PDIP -40 to 125
Quad Rail-To-Rail Low-Voltage Low-Power Operational Amplifier 14-TSSOP -40 to 125
Advanced LinCMOS(TM) Rail-To-Rail Quad Operational Amplifier 14-SOIC -40 to 125
Advanced LinCMOS(TM) Rail-To-Rail Quad Operational Amplifier 14-TSSOP -40 to 125
Advanced LinCMOS(TM) Rail-To-Rail Quad Operational Amplifier 14-PDIP -40 to 125
Dual Low Voltage LinCMOS(TM) Differential Comparator 8-TSSOP -40 to 85
Quad Low Voltage LinCMOS(TM) Differential Comparator 14-PDIP -40 to 85
Quad Low Voltage LinCMOS(TM) Differential Comparator 14-SOIC -40 to 85
Low Voltage Rail-To-Rail Low Power Precision Advanced LinCMOS(TM) Quad Operational Amplifier 20-LCCC -55 to 125
Rail-to-Rail Output Wide-Input-Voltage Micropower Dual Op Amps 20-LCCC -55 to 125
Quad Low-Voltage Low-Power Operational Amplifier 14-PDIP -40 to 85
Dual High-Performance, Low-Voltage Operational Amplifier 8-SO 0 to 70
Low Voltage Rail-To-Rail Low Power Advanced LinCMOS(TM) Quad Operational Amplifier 14-CFP -55 to 125 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
DIGITAL Replaced 单芯位CMOS微机
550-uA/Channel 3-MHz RRIO Op Amp 8-SOIC -40 to 125 单芯位CMOS微机
Single High-Performance, Low-Voltage Operational Amplifier 5-SOT-23 -40 to 85 单芯位CMOS微机
Quad Rail-To-Rail Low-Voltage Low-Power Operational Amplifier 14-SOIC -40 to 125 单芯位CMOS微机
550-uA/Channel 3-MHz RRIO Op Amp 5-SOT-23 -40 to 125 单芯位CMOS微机
ANALOG Replaced PQ033RDA1SZH 单芯位CMOS微机
ANALOG Replaced PQ033Y053ZPH 单芯位CMOS微机
LCD Displays 8.4 inch (21.0 cm) 18-bit digital (6 bits/color) 单芯位CMOS微机
LCD Displays 6.4 inch (16.32 cm) Comp NTSC 单芯位CMOS微机
Dual, Wide-Input-Voltage uPower, Rail-To-Rail Single-Supply Operational Amplifier 8-SOIC 0 to 70 单芯位CMOS微机
Quad MicroPower, RRIO Operational Amplifier with wide supply voltage range and high CMRR 14-SOIC 0 to 70 单芯位CMOS微机
550-uA/Channel 3-MHz RRIO Op Amp with Shutdown 14-SOIC -40 to 125 单芯位CMOS微机
CAP CERAMIC 39PF 50V NP0 1206 单芯位CMOS微机
LinCMOS(TM) Quad Low-Voltage Differential Comparator 14-CFP -55 to 125 单芯位CMOS微机
550-uA/Channel 3-MHz RRIO Op Amp 14-TSSOP -40 to 125 单芯位CMOS微机
Quad MicroPower, RRIO Operational Amplifier with wide supply voltage range and high CMRR 14-SOIC -40 to 125 单芯位CMOS微机
550-uA/Channel 3-MHz RRIO Op Amp with Shutdown 16-PDIP -40 to 125 单芯位CMOS微机
10-uA/Channel, 160kHz, RRIO Op Amp 5-SOT-23 -40 to 125 单芯位CMOS微机
Single High-Performance, Low-Voltage Operational Amplifier 5-SOT-23 0 to 70 单芯位CMOS微机
Quad Low-Voltage Micropower Operational Amplifier 14-SOIC -40 to 85 单芯位CMOS微机
550-uA/Channel 3-MHz RRIO Op Amp with Shutdown 16-SOIC 0 to 70 单芯位CMOS微机
550-uA/Channel 3-MHz RRIO Op Amp with Shutdown 10-MSOP -40 to 125 单芯位CMOS微机
Op Amp (1) Open Collector Comparator (1) Combo IC 8-SOIC -40 to 125 单芯位CMOS微机
Low Voltage Rail-To-Rail Low Power Advanced LinCMOS(TM) Quad Operational Amplifier 14-CDIP -55 to 125 单芯位CMOS微机
550-uA/Channel 3-MHz RRIO Op Amp 14-PDIP -40 to 125 单芯位CMOS微机
LinCMOS(TM) Dual Low-Voltage Differential Comparator 20-LCCC -55 to 125 单芯位CMOS微机
550-uA/Channel 3-MHz RRIO Op Amp with Shutdown 8-SOIC -40 to 125 单芯位CMOS微机
Dual High-Performance, Low-Voltage Operational Amplifier 8-SOIC -40 to 85
550-uA/Channel 3-MHz RRIO Op Amp with Shutdown 16-SOIC -40 to 125
Replaced GP1UX510QS
   SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
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Renesas Electronics Corporation
Part No. SH7286-Starter-Kit
Description Renesas Starter Kit for SH7286
Tech specs 　 　

Official Product Page

    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M38030F2L-XXXWG M38030MAL-XXXWG M38030MAL-XXXKP M38030FAL-XXXSP M38031FAL-XXXHP M38030FAL-XXXWG M38030MAL-XXXHP M38030FAL-XXXKP M38031FAL-XXXKP M38030FAL-XXXHP M38031FAL-XXXSP M38031FAL-XXXWG M38030MAL-XXXSP M38030F3L-XXXHP M38030F3L-XXXWG M38030M3L-XXXKP M38030F3L-XXXSP M38030F3L-XXXKP M38030M3L-XXXHP M38030FBL-XXXWG M38030MBL-XXXHP M38030FBL-XXXHP M38030FBL-XXXSP M38030MBL-XXXKP M38030M2L-XXXHP M38030M2L-XXXKP M38030M2L-XXXSP M38030M2L-XXXWG M38031F2L-XXXHP M38031F2L-XXXKP M38031F2L-XXXSP M38031F2L-XXXWG M38030FB-XXXHP M38031FBL-XXXSP M38035MBL-XXXSP M38038FBL-XXXSP M38039FBL-XXXSP M38030MBL-XXXSP M38036MBL-XXXSP M38037FBL-XXXSP M38037MBL-XXXSP M38036FBL-XXXSP M38038MBL-XXXSP M38031FC-XXXHP M38031FC-XXXKP M38031FC-XXXWG M38031FCL-XXXHP M38031FCL-XXXKP M38031FCL-XXXSP M38031FCL-XXXWG M38031F5-XXXKP M38031F5-XXXSP M38031F5-XXXWG M38031F5L-XXXHP M38031F5L-XXXKP M38031F5L-XXXSP M38031F5L-XXXWG M38030F1-XXXHP M38030F1-XXXKP M38030F1-XXXSP M38030F1-XXXWG M38030F1L-XXXHP M38030F1L-XXXKP M38030F1L-XXXSP M38030F1L-XXXWG M38031F1-XXXKP M38031F1-XXXWG M38031F1L-XXXHP M38031F1L-XXXKP M38031F6-XXXHP M38031F6-XXXKP M38031F6-XXXSP M38031F6-XXXWG M
Description 256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
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Renesas Electronics Corporation
Part No. RTK5572NNDS00000BE
Description Renesas Starter Kit+ for RX72N
Tech specs 　 　

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