...Unit
V mA 0.5 5.0 2.0 mA mA
on CHARACTERISTICS hFE VCE(sat) VBE(sat) VBE(on) DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter on Voltage 750 100 2.0 3.0 4.0 2.8 18000 -- V V V
DY...
...ge Base saturation voltage Turn-on time Storage time
IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) ton tstg
A
s s s
* Pulse test PW 350 s, duty cycle 2%
hFE CLASSIFICATIon
Marking hFE2 M 40 to 80 L 60 to 120 K 100 to 200
TYPICA...
Description
Silicon transistor SILICon POWER TRANSISTOR 7 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB SC-46, 3 PIN
...llector capacitance at f = 1MHz on times Tum-off storage time Fall time
ConDITIonS VCB=100V VEB=5V IC=1mA IC = 3.5A; IB = 0.35A IC = 3A; VCE = 5V IC = 1A; VCE = 12V VCB = 10V
TYP 120 50 20 300
MAX 0.2 0.2 2 250 -
UNIT mA mA V V ...
...emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off
2
2SA1193(K)
Maximum Collector Dissipation Curve 0.9 Collector power dissipation PC (W) Collector current IC (A) -...
...emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test I CBO I EBO hFE VCE(sat) VBE(sat) t on t off
Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) -10 -3 iC (peak) -1.0 -0.3 -0.1 -0.03
Are...
... Symbol: AS
Note) *: Measure on the ceramic substrate at 15 x 15 x 0.6 mm3.
I Electrical Characteristics Ta = 25C 3C
Parameter Colle...off time *2 VCB = 10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 50 mA f = 200 MHz -15 -15 -5 200 100 -14...
...Pw=10ms 2 Each terminal mounted on a recommended land
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
...off current IEBO - - -1.0 A VEB= -4V Emitter cut-off current - -150 -300 mV IC= -500mA, IB= -50mA Co...
Description
Medium power transistor (−30V, −1.0A) Medium power transistor (-30V, -1.0A)
... 2 C C
1 Pw=100ms *2 Mounted on a 40x40x0.7 (mm) ceramic substrate
1.5
1.6 4.5
3.0
(2)
1/3
2SA2049
Transistor
!Electr...off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition ...
....01 g (typ.)
Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm )
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC ...
... 0.01 g (typ.)
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm )
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC ...