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IXYS, Corp.
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| Part No. |
VMO580-02T
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| OCR Text |
...anced technical information 010 megamos tm fet module v dss = 200 v i d25 = 580 a r ds(on) = 3.8 m ? ? ? ? ? vmo 580-02t mosfet symbol conditions maximum ratings v dss t vj = 25c to 150c 200 v v gs 20 v i d25 t c = 25c 580 a i d80 t c =... |
| Description |
580 A, 200 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
51.14K /
2 Page |
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IXYS
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| Part No. |
IFRP460
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| OCR Text |
... 300 s, duty cycle d 2 % megamos tm irfp 460 v dss = 500 v power mosfet i d(cont) = 20 a r ds(on) = 0.27 ? ? ? ? ? g = gate, d = drain, s = source, tab = drain features l repetitive avalanche energy rated l fast switching times l... |
| Description |
Power MOSFET
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| File Size |
132.99K /
4 Page |
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it Online |
Download Datasheet |
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IXYS CORP
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| Part No. |
IXTK75N30
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| OCR Text |
...ity ds99012(03/03) high current megamos tm fet n-channel enhancement mode symbol test conditions maximum ratings v dss t j = 25c to 150c 300 v v dgr t j = 25c to 150c; r gs = 1.0 m ? 300 v v gs continuous 20 v v gsm transient 30 v i d25 ... |
| Description |
75 A, 300 V, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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| File Size |
118.28K /
4 Page |
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it Online |
Download Datasheet |
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