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  IRFB31N20 Datasheet PDF File

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Part No. IIRFB31N20D
Description N-Channel MOSFET Transistor

File Size 332.97K  /  2 Page

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    IRFB31N20D IRFS31N20DTRL

International Rectifier, Corp.
Part No. IRFB31N20D IRFS31N20DTRL
Description Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|1A条(丁)|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.082ohm,身份证\u003d 31A条)

File Size 192.77K  /  11 Page

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    IRFSL31N20D IRFB31N20D IRFS31N20D IRFB31N20

IRF[International Rectifier]
Part No. IRFSL31N20D IRFB31N20D IRFS31N20D IRFB31N20
Description Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)
SMPS MOSFET

File Size 187.80K  /  11 Page

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    IRFB31N20DPBF IRFS31N20D IRFS31N20DTRR IRFS31N20DTRL IRFSL31N20D IRFS31N20DPBF IRFSL31N20DPBF

International Rectifier
Part No. IRFB31N20DPBF IRFS31N20D IRFS31N20DTRR IRFS31N20DTRL IRFSL31N20D IRFS31N20DPBF IRFSL31N20DPBF
Description 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 147.53K  /  11 Page

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    IRFS31N20DPBF IRFSL31N20DPBF IRFB31N20DPBF IRFB31N20DPBF-15 IRFS31N20DTRLP

International Rectifier
Part No. IRFS31N20DPBF IRFSL31N20DPBF IRFB31N20DPBF IRFB31N20DPBF-15 IRFS31N20DTRLP
Description High Frequency DC-DC converters
HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082ヘ , ID = 31A )
HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082Ω , ID = 31A )

File Size 285.31K  /  12 Page

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Price and Availability



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Part: IRFB31N20D
Maker: IR
Pack: TO-220
Stock: Reserved
Unit price for :
    50: $0.70
  100: $0.66
1000: $0.63

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Price & Availability of IRFB31N20
Newark

Part # Manufacturer Description Price BuyNow  Qty.
IRFB31N20DPBF
57J2554
Infineon Technologies AG N Channel Mosfet, 200V, 31A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5.5V; Msl:- Rohs Compliant: Yes |Infineon IRFB31N20DPBF BuyNow
0

Avnet Americas

Part # Manufacturer Description Price BuyNow  Qty.
IRFB31N20DPBF
IRFB31N20DPBF
Infineon Technologies AG Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB31N20DPBF) RFQ
2800

Quest Components

Part # Manufacturer Description Price BuyNow  Qty.
IRFB31N20D
International Rectifier MOSFET Transistor, N-Channel, TO-220AB 159: USD5.6395
38: USD6.3231
1: USD10.2537
BuyNow
190

ComSIT USA

Part # Manufacturer Description Price BuyNow  Qty.
IRFB31N20D
International Rectifier SMPS HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RFQ
800

Win Source Electronics

Part # Manufacturer Description Price BuyNow  Qty.
IRFB31N20DPBF
Infineon Technologies AG MOSFET N-CH 200V 31A TO-220AB 18: USD2.826
44: USD2.319
67: USD2.247
92: USD2.174
119: USD2.102
160: USD1.884
BuyNow
55745
IRFB31N20D
International Rectifier Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 18: USD2.826
44: USD2.319
67: USD2.247
92: USD2.174
119: USD2.102
160: USD1.884
BuyNow
55746

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