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General Electric Solid State
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Part No. |
IRF132
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Description |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A.
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File Size |
160.91K /
5 Page |
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it Online |
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General Electric Solid State
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Part No. |
IRF452
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Description |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
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File Size |
191.64K /
5 Page |
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it Online |
Download Datasheet |
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Advanced Linear Devices, Inc.
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Part No. |
AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120WCC AM29LV017D-90FC AM29LV017D-90EI AM29LV017D-120EI
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Description |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes x8 Flash EEPROM 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
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File Size |
640.33K /
44 Page |
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it Online |
Download Datasheet |
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MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
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Part No. |
PST993 PST993C PST993D PST993E PST993F PST993G PST993H PST993I PST993J PST993K PST993L PST994 PST994C PST994D PST994E PST994F PST994G PST994H PST994I PST994J PST994K PST994L
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Description |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
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File Size |
93.95K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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