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  drain-current Datasheet PDF File

For drain-current Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    TY Semiconductor Co., Ltd
Part No. KRF7805Z
Description Continuous Drain Current, VGS 10V, Ta = 25 A Pulsed Drain Current IDM 120 A

File Size 186.45K  /  2 Page

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    Philips
Part No. PNP3055E
Description PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.

File Size 66.23K  /  7 Page

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    General Electric Solid State
Part No. IRF132
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A.

File Size 160.91K  /  5 Page

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    General Electric Solid State
Part No. IRF452
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.

File Size 191.64K  /  5 Page

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    HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B HCC4001 HCC4001B HCC_HCF4001B HCF4025BM1 HCC_HCF4025B HCF4025BEY HCC4

ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B HCC4001 HCC4001B HCC_HCF4001B HCF4025BM1 HCC_HCF4025B HCF4025BEY HCC4000 HCC4000B HCC4000BF HCC4001BF HCC4002 HCC4002B HCC4002BF HCC4025 HCC4025B HCC4025BF HCF4000BC1 HCF4000BEY HCF4000BM1 HCF4001BC1 HCF4001BEY HCF4001BM1 HCF4002BC1 HCF4002BEY HCF4002BM1 HCF4025 HCF4025B HCF4025BC1 HCC4002B-4025B HCF4002B-4025B HCF4000B-4001B HCC4000B-4001B FXXXXBM1 HCCXXXXBF 4000B 4002B
Description    NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A

File Size 288.46K  /  13 Page

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    Advanced Linear Devices, Inc.
Part No. AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120WCC AM29LV017D-90FC AM29LV017D-90EI AM29LV017D-120EI
Description MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes
x8 Flash EEPROM
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM

File Size 640.33K  /  44 Page

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    PST993 PST993C PST993D PST993E PST993F PST993G PST993H PST993I PST993J PST993K PST993L PST994 PST994C PST994D PST994E PS

MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
Part No. PST993 PST993C PST993D PST993E PST993F PST993G PST993H PST993I PST993J PST993K PST993L PST994 PST994C PST994D PST994E PST994F PST994G PST994H PST994I PST994J PST994K PST994L
Description MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset

File Size 93.95K  /  4 Page

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    IRFF120 IRFF121 IRFF122 IRFF123

General Electric Solid State
GE Solid State
Part No. IRFF120 IRFF121 IRFF122 IRFF123
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS

File Size 161.85K  /  5 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IRFF110 IRFF111 IRFF112 IRFF113
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    INTERSIL[Intersil Corporation]
Part No. HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K HCS04KMSR
Description From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V

File Size 103.81K  /  8 Page

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