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  d-pak Datasheet PDF File

For d-pak Found Datasheets File :: 6964    Search Time::1.14ms    
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    AME8815BEDS250 AME8815AEBT180 AME8815AEGT180 AME8815BEBT180 AME8815BEGT180 AME8815AEBT330 AME8815AEGT330 AME8815BEBT330

AME[Analog Microelectronics]
Part No. AME8815BEDS250 AME8815AEBT180 AME8815AEGT180 AME8815BEBT180 AME8815BEGT180 AME8815AEBT330 AME8815AEGT330 AME8815BEBT330 AME8815BEGT330 AME8815AEBT475 AME8815BEBT475 AME8815BEB AME8815AEBT500 AME8815BEBT500 AME8815BECS330 AME8815AEGT475 AME8815BEGT475 AME8815BECS150 AME8815AECS150 AME8815BEGT500 AME8815 AME8815AEBT150 AME8815AEBT250 AME8815AECS180 AME8815AECS250 AME8815AECS330 AME8815AECS475 AME8815AECS500 AME8815AEDS150 AME8815AEDS180 AME8815AEDS250 AME8815AEDS330 AME8815AEDS475 AME8815AEDS500 AME8815AEGT150 AME8815AEGT250 AME8815AEGT500 AME8815BEBT150 AME8815BEBT250 AME8815BECS180 AME8815BECS250 AME8815BECS475 AME8815BECS500 AME8815BEDS150 AME8815BEDS180 AME8815BEDS330 AME8815BEDS475 AME8815BEDS500 AME8815BEGT150 AME8815BEGT250
OCR Text ...: 3 Package B: TO-220 C: TO-252 D: TO-263 G: SOT-223 Operating Temperature 70oC C: 0oC to o E: -40 C to 85oC M: -40oC to 125oC Pin Configura...PAK TO-220 SOT-223 Internal Power Dissipation (P D ) ( T = 100oC) TO-252 (DPAK) D2PAK TO-220 Maximum...
Description 1.5A CMOS LDO

File Size 106.32K  /  17 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...h: LOAD CURRENT (A) 75 D uty cycle : 50 % T J = 12 5 C T sink = 90 C G a te d rive a s spe cified P ow er D is s ipation = 170 W S...PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Seg...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...: 100 LOAD CURRENT (A) D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified P ow e r Dis sip ation = 120 W S q u a r...PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Seg...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...h: 50 LOAD CURRENT (A) D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as specified P ow e r Dis sip ation = 65 W S q u a re...PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Seg...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...: 70 60 50 40 30 20 Id e a l d io d e s 10 0 0.1 1 10 LOAD CURRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te...PAK Dimensions are shown in millimeters (inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Seg...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text ...tching Fully Avalanche Rated D VDSS = 55V RDS(on) = 8.0m G S ID = 110A Description Advanced HEXFET(R) Power MOSFETs from Int...Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the...
Description Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

File Size 144.83K  /  10 Page

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text .... Typ. Max. Units Conditions D MOSFET symbol 41 --- --- showing the A G integral reverse --- --- 164 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, VGS = 0V --- 200 300 ns TJ = 25C, IF = 25A --- 1.6 2.4 C di/dt = 100A/s Intrin...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...anche Rated Description l l D VDSS = -55V RDS(on) = 0.02 G ID = -74A S Fifth Generation HEXFETs from International Rectifie...Pak is suitable for high current applications because of its low internal connection resistance and ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...anche Rated Description l l D VDSS = -100V RDS(on) = 0.48 G ID = -6.8A S Fifth Generation HEXFETs from International Rectif...Pak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 2...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...anche Rated Description l l D VDSS = -60V RDS(on) = 0.50 G S ID = -6.7A Third Generation HEXFETs from International Rectifie...Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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