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  7.60-7.80ghz Datasheet PDF File

For 7.60-7.80ghz Found Datasheets File :: 13    Search Time::5.172ms    
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    FMPA2151

Fairchild Semiconductor
Part No. FMPA2151
OCR Text ...dle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage (PA ON 2.4) Mirror Suppl...60 0 1 2 3 4 5 6 7 8 9 10 S11 (dB) S21 (dB) S22 (dB) Frequency (GHz) 4 FMPA2151 Rev. B www...
Description 2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)

File Size 80.55K  /  6 Page

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    BFP740F

Infineon Technologies AG
Part No. BFP740F
OCR Text ... 100 3 400 V A nA A - typ. 4.7 250 V(BR)CEO ICES ICBO IEBO hFE 4 160 2005-11-08 2 BFP740F Electrical Characteristics at TA =...60 40 20 0 0 10 1 -7 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 15 30 45 60 75 9...
Description NPN Silicon Germanium RF Transistor

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    INFINEON[Infineon Technologies AG]
Part No. BFP540ESD
OCR Text ...0.05 0.02 0.01 0.005 D=0 10 1 -7 10 0 25 50 75 100 125 150 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 ...60 70 80 0 10 20 30 40 C 50 60 70 80 90 100 I [mA] I [mA] Power gain Gma...
Description NPN Silicon RF Transistor

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    INFINEON[Infineon Technologies AG]
Part No. BFR740L3
OCR Text ... 100 3 400 V A nA A - typ. 4.7 250 V(BR)CEO ICES ICBO IEBO hFE 4 160 2 2005-10-17 BFR740L3 Electrical Characteristics at ...60 40 20 0 0 10 1 -7 10 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 15 30 45 60 75 9...
Description NPN Silicon Germanium RF Transistor

File Size 133.47K  /  9 Page

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    HITACHI-METALS[Hitachi Metals, Ltd]
Part No. ESLB-S540A
OCR Text ...11.8GHz) Attenuation3 dB (at 14.7-17.7GHz) Characteristec Impedance Ohm Handling Power W Operating Temperature deg.C 5400 fo +/- 500 1.4 max...60 0.5 3.0 5.5 8.0 10.5 13.0 15.5 18.0 20.0 fre q , GHz freq, GHz m14 freq=4.900GHz dB(S (4...
Description 2012 Size Chip Band Pass Filter

File Size 93.10K  /  4 Page

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    EIC7678-25

Excelics Semiconductor, Inc.
Part No. EIC7678-25
OCR Text 7.60-7.80 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES * * * * * * * 7.60- 7.80GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compre...
Description 7.60-7.80ghz 25-Watt Internally Matched Power FET

File Size 106.10K  /  2 Page

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    BFR740L3RH

Infineon Technologies AG
Part No. BFR740L3RH
OCR Text ... 1 ma, i b = 0 v (br)ceo 4 4.7 - v collector-emitter cutoff current v ce = 13 v, v be = 0 v ce = 5 v, v be = 0 i ces - - - ...60 75 90 105 120 135 150 0 20 40 60 80 100 120 140 160 180 t s [c] ptot [mw] permissible puls load ...
Description NPN Silicon Germanium RF Transistor

File Size 595.69K  /  11 Page

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    BFP650F

Infineon Technologies AG
Part No. BFP650F
OCR Text ... 0 c t a 0 c v ceo 4 3.7 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.2 collec...60 75 90 105 120 135 150 0 50 100 150 200 250 300 350 400 450 500 550 t s [c] ptot [mw] collector-b...
Description NPN Silicon Germanium RF Transistor

File Size 125.71K  /  7 Page

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    BFR750L3RH

Infineon Technologies AG
Part No. BFR750L3RH
OCR Text ... 3 ma, i b = 0 v (br)ceo 4 4.7 - v collector-emitter cutoff current v ce = 13 v, v be = 0 i ces - - 100 a collector-base cutoff curr...60 ma, v ce = 3 v, pulse measured h fe 160 250 400 - 1 t s is measured on the collector lead at t...
Description NPN Silicon Germanium RF Transistor

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    Hitachi
Part No. ESLB-P540A-X
OCR Text ...) attenuation3 db 15 min (at 14.7-17.7ghz) phase balance deg. 180 +/- 15 amplitude balance db 1.5 max impedance ratio ohm 50:50 or 50:100 50...60 -50 -40 -30 -20 -10 -70 0 freq, ghz db(s(7,6)) m19 m20 m21 m22 m25 m26 m5 freq=4.900ghz db(s(2,1)...
Description 4.9-5.9GHz Band Chip Multilayer Band Pass Filter

File Size 113.80K  /  4 Page

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