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    2SK1611

Panasonic Semiconductor
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Part No. 2sk1611
OCR Text 2sk1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 s Application...
Description V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
File Size 35.34K  /  2 Page

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    K1611

ETC
Part No. K1611
OCR Text 2sk1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 s Application...
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File Size 66.25K  /  2 Page

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