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  samwin. Datasheet PDF File

For samwin. Found Datasheets File :: 121    Search Time::1.781ms    
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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW50N10
OCR Text ... :17 m 1 2 3 sw50n10 samwin item sales type marking package packaging 1 sw p 50n10 sw50n10 to - 220 tube order codes symbol parameter value unit v dss drain to source voltage 100 v i d ...
Description N-channel TO-220 MOSFET

File Size 710.83K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60D
OCR Text ...th advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is main...
Description N-channel TO-220F MOSFET

File Size 589.48K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60H
OCR Text ...ced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excell...
Description N-channel TO-220F MOSFET

File Size 514.39K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60K
OCR Text ... - junction technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, excellent avalanche characteristics, low gate charge and e...
Description N-channel TO-220F/I-PAK MOSFET

File Size 644.24K  /  6 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60R
OCR Text ... :1.25 1 2 3 sw7n60r samwin item sales type marking package packaging 1 sw p 7n60 sw7n60r to - 220 tube order codes symbol parameter value unit v dss drain to source voltage 600 v i d ...
Description N-channel TO-220 MOSFET

File Size 641.41K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW7N60
OCR Text ... 1 /5 samwin features high ruggedness r ds( on ) (max 1.3 ? )@v gs =10v gate charge (typical 32 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with adva...
Description N-channel Mosfet

File Size 374.64K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW50N06T
OCR Text ...th advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is main...
Description N-channel D-PAK/TO-220 MOSFET

File Size 709.10K  /  6 Page

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    Xian Semipower Electronic T...
Part No. SW180N75A
OCR Text ...ced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially exce...
Description N-channel TO-220 MOSFET

File Size 509.63K  /  5 Page

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    SEMIPOWER
Part No. SW12N65B
OCR Text ...th advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is main...
Description N-channel TO-220F MOSFET

File Size 394.29K  /  5 Page

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    Xian Semipower Electronic T...
Part No. SW75N08
OCR Text ...ced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially exce...
Description N-channel TO-220 MOSFET

File Size 365.72K  /  5 Page

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For samwin. Found Datasheets File :: 121    Search Time::1.781ms    
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