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  samwin. Datasheet PDF File

For samwin. Found Datasheets File :: 77    Search Time::1ms    
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    SW830

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ETC[ETC]
Part No. SW830
OCR Text SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4 ohm : 5.0 A : 28 nc : 73 W SW830 This power MOSFET is produced in CHMC with advanced VDMOS technology of...
Description N-Channel MOSFET

File Size 674.64K  /  6 Page

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    Sammwin
Part No. SW50N06
OCR Text samwin sw50n06 rev2.1 05.07.21 features n-channel mosfet bv dss (minimum) r ds(on) (maximum) i d qg(typical) p d (@tc=25 ) general description this power mosfet is produced in chmc with advanced vdmos p...
Description N-Channel MOSFET

File Size 374.01K  /  6 Page

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    Samwin
Part No. SW634
OCR Text samwin sw634 rev0.1 04.10.1 general description thispowermosfet isproduced in chmc with advancedvdmostechnology of samwin.this technology enable power mosfet to have better characteristics,suchas fast switching time, lowon resistance,low ga...
Description N-Channel MOSFET

File Size 714.07K  /  6 Page

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    Samwin
Part No. SW630
OCR Text samwin sw630 rev0.1 04.10.1 general description thispowermosfet isproduced in chmc with advancedvdmostechnology of samwin.this technology enable power mosfet to have better characteristics,suchas fast switching time, lowon resistance,low ga...
Description N-Channel MOSFET

File Size 686.90K  /  6 Page

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    SAMWIN
Part No. SW830
OCR Text samwin sw830 rev0.1 04.10.1 general description thispowermosfet isproduced in chmc with advancedvdmostechnology of samwin.this technology enable power mosfet to have bettercharacteristics, suchas fast switching time, low on resistance,low g...
Description N-Channel MOSFET

File Size 856.71K  /  6 Page

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    SAMWIN
Part No. SW840
OCR Text samwin sw840 rev0.1 04.10.15 features n-channel mosfet bv dss (minimum) r ds(on) (maximum) i d qg(typical) p d (@tc=25 ) general description this power mosfet is produced with advanced vdmos process,...
Description N-Channel MOSFET

File Size 266.92K  /  6 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SW4N60
OCR Text ... 1 /5 samwin features high ruggedness r ds( on ) (max 2.2 ? )@v gs =10v gate charge ( typ 30 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advance...
Description N-channel MOSFET

File Size 347.00K  /  5 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SWP12N60 SWF12N60 SW12N60
OCR Text ...th advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly sui...
Description N-channel MOSFET

File Size 929.73K  /  7 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electron...
Part No. SWP12N65 SW12N65 SWF12N65
OCR Text ...th advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly sui...
Description N-channel MOSFET
   N-channel MOSFET

File Size 1,029.78K  /  7 Page

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    Samwin
Part No. SWD1N60
OCR Text ...th advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics . this power mos...
Description N-Channel MOSFET

File Size 753.31K  /  7 Page

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