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				TOSHIBA
Part No.	TK65G10N1
OCR Text	...s features (1) low drain-source on-resistance: r ds(on) = 3.8 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ...off current drain-source breakdown voltage drain-source breakdown voltage gate threshold voltage dr...
Description	Power MOSFET (N-ch single 60V<VDSS≤150V)
File Size	242.48K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK5A55D
OCR Text	...ations ? low drain-source on-resistance: r ds (on) = 1.4 ? (typ.) ? high forward transfer admittance: \|y fs \| = 2.4 s (typ.) ? l...off current i dss v ds = 550 v, v gs = 0 v ? ? 10 a drain-source breakdown voltage v (br)...
Description	Field Effect Transistor Switching Regulator Applications
File Size	184.10K / 6 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK17A65W
OCR Text	...s features (1) low drain-source on-resistance: r ds(on) = 0.17 ? (typ.) by used to super junction structure : dtmos (2) easy to control ...off current drain-source breakdown voltage gate threshold voltage drain-source on-resistance symbol ...
Description	Power MOSFET (N-ch 500V<VDSS≤700V)
File Size	239.48K / 10 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK17A65W5
OCR Text	... ns (typ.) (2) low drain-source on-resistance: r ds(on) = 0.19 ? (typ.) by used to super junction structure : dtmos (3) easy to control ...off current drain-source breakdown voltage gate threshold voltage drain-source on-resistance symbol ...
Description	Power MOSFET (N-ch 500V<VDSS≤700V)
File Size	238.15K / 10 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK17A65U
OCR Text	...s features (1) low drain-source on-resistance: r ds(on) = 0.20 ? (typ.) (2) high forward transfer admittance: \|y fs \| = 12.0 s (typ.) (3)...off current drain-source breakdown voltage gate threshold voltage drain-source on-resistance forward...
Description	Switching Voltage Regulators
File Size	230.56K / 9 Page	View it Online	Download Datasheet


Part No.	STD35NF06T4
OCR Text	...hematic diagram n typical r ds (on) = 0.018 w n extremely high dv/dt capability n 100% avalanche tested n gate charge minimized description...off on (1) dynamic rthj-case thermal resistance junction-case max 2.7 c/w rthj-amb thermal resista...
Description	Progress in Power Switching(?垫?寮???硅靠
File Size	325.53K / 9 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI7792DP
OCR Text	...roduct summary v ds (v) r ds(on) ( ? ) i d (a) a q g (typ.) 30 0.0021 at v gs = 10 v 60 41 nc 0.0026 at v gs = 4.5 v 60 ordering i...off delay time t d(off) 50 90 fall time t f 14 28 tu r n - o n d e l ay t i m e t d(on) v dd ...
Description	N-Channel 30 V (D-S) MOSFET with Schottky Diode
File Size	508.97K / 13 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SI7748DP SI7748DP-T1-GE3
OCR Text	...roduct summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 30 0.0048 at v gs = 10 v 50 27.8 nc 0.0066 at v gs = 4.5 v 50 ordering ...off delay time t d(off) 35 70 fall time t f 816 tu r n - o n d e l ay t i m e t d(on) v dd = ...
Description	N-Channel 30-V (D-S) MOSFET with Schottky Diode
File Size	481.42K / 13 Page	View it Online	Download Datasheet

				RFHIC
Part No.	RTH26007-10
OCR Text	...ures application s ? gan on si c chip on board ? surface mount hybrid type ? asymmetric doherty amplifier ? high efficiency ...off : turn off the drain v oltage and last turn off the gate voltage n ote 1. aclr measur...
Description	GaN Doherty Hybrid Amplifier
File Size	503.00K / 7 Page	View it Online	Download Datasheet

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