STH75N06-07L n-channel 60-v (d-s) 175 mosfet www.artschip.com 1 product summary v (br)dss (v) r ds(on) ( ? ) i d (a) 0.0075@ v gs =10v 60 0.0085@v gs =4.5v 75 a top view STH75N06-07L drain connected to tab STH75N06-07L n-channel mosfet absolute maximum ratings (tc=25 unless otherwise noted) parameter symbol limit unit gate-source voltage v gs 20 v tc = 2 5 75 a continuous drain current (tj=175 ) tc=125 i d 55 pulsed drain current i dm 240 avalanche current i ar 60 a repetitive avalanche energy b l=0.1mh e ar 280 mj tc = 2 5 (to-220ab and to-263) 250 c power dissipation t a =25 (to-263) d p d 3.7 w operating junction and st orage temperature range t j ,tstg -55 to 175 thermal resistance ratings parameter symbol limit unit pcb mount (to-263) d 40 junction-to-ambient free air (to-220ab) r thja 62.5 junction-to-case r thjc 0.6 /w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
STH75N06-07L n-channel 60-v (d-s) 175 mosfet www.artschip.com 2 specifications (tj=25 unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v, i d =250a 60 gate threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 3.0 v gate-body leakage i gss v ds =0v, v gs =20v 100 na v ds =60v, v gs =0v 1 v ds =60v. v gs =0v, t j =125 50 zero gate voltage drain current i dss v ds =60v, v gs =0v, t j =175 250 a on-state drain current a i d(on) v ds =5v, v gs =10v 120 a v gs =10v, i d =30a 0.0061 0.0075 v gs =4.5v, i d =20a 0.0071 0.0085 v gs =10v, i d =30a, t j =125 0.012 drain-source on-state resistance a r ds(on) v gs =10v, i d =30a, t j =175 0.015 ? forward transconductance a g fs v ds =15v, i d =30a 30 s dynamic b input capacitance c iss 6300 output capacitance c oss 920 reverse transfer capacitance c rss v gs =0v, v ds =25, f=1mhz 350 pf total gate charge c q g 75 120 gate-source charge c q gs 18 gate-drain charge c q gd v ds =30v, v gs =10v, i d =75a 27 nc turn-on delay time c t d(on) 14 40 rise time c tr 15 40 turn-off delay time c t d(off) 150 300 fall time c tf v dd =30v, r l =0.47 ? i d 75a, v gen =10v, r g =2.5 ? 50 100 ns source-drain diode ratings and characteristics (t c =25 ) b continuous current i s 75 pulsed current i sm 240 a forward voltage v sd i f =75a, v gs =0v 1.0 1.3 v reverse recovery time trr 67 120 ns peak reverse recovery current i rm(rec) 6 8 a reverse recovery charge qrr i f =75a, di/dt = 100a/s 0.2 0.48 c notes a. pulse test: pulse width 300 sec, duty cycle 2%. b. guaranteed by design, not su bject to production testing. c. independent of oper ating temperature.
STH75N06-07L n-channel 60-v (d-s) 175 mosfet www.artschip.com 3 typical characteristics (25 unless noted)
STH75N06-07L n-channel 60-v (d-s) 175 mosfet www.artschip.com 4 typical characteristics (25 unless noted) thermal ratings
STH75N06-07L n-channel 60-v (d-s) 175 mosfet www.artschip.com 5
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