simple drive requirement small package outline surface mount device sot? 23 (to?236ab) leshan radio company, ltd. S-LP3415ELT1G maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) symbol limit unit v ds -20 v gs 8 i d -4 i dm -30 ta = 25 o c 1 ta = 75 o c 0.6 t j , t stg -55 to 150 o c r qjc junction-to-ambient thermal resistance (pcb mounted) 2) r qja 150 2. 1-in 2 2oz cu pcb board 3. guaranteed by design; not subject to production testing continuous drain current gate-source voltage maximum power dissipation operating junction and storage temperature range o c/w junction-to-case thermal resistance parameter v a w drain-source voltage p d pulsed drain current 1) 20v p-channel enhancement-mode mosfet v ds = -20v r ds(on), vgs@-4.5v, ids@-4a = 60 r ds(on), vgs@-2.5v, ids@-4a = 75 features advanced trench process technology high density cell design for ultra low on-resistance m m we declare that the material of product note : 1. repetitive rating: pulse width limited by the maximum junction temperation compliance with rohs requirements. ordering information p15 p15 device marking shipping 3000/tape& reel 10000/tape& reel r ds(on), vgs@-1.8v, ids@-2a = 85 m lp3415elt1g lp3415elt3g 100 rev .a 1/3 1 2 3 lp3415elt1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. S-LP3415ELT1G s-lp3415elt3g
leshan radio company, ltd. lp3415elt1g , S-LP3415ELT1G electrical characteristics parameter symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d -20 = -250ua v drain-source on-state resistance r ds(on) v gs d = -1.8v, i = -2a 85.0 m drain-source on-state resistance r ds(on) v gs d = -2.5v, i = -4a 75.0 drain-source on-state resistance r ds(on) v gs d = -4.5v, i = -4a 60.0 gate threshold voltage v gs(th) v ds =v gs d -0.3 , i = -250ua -1 v zero gate voltage drain current i dss v ds -1 = -16v, v gs = 0v ua gate body leakage i gss v gs 10 = 8v, v ds = 0v ua gate resistance rg v ds 6.5 = 0v, f = 1.0mhz dynamic 3) total gate charge q g v ds =-10v, i d = -4a v gs = -4.5v 4.59 5.97 nc gate-source charge q gs 2.14 2.78 gate-drain charge q gd 2.51 3.26 turn-on delay time t d(on) v dd = -10v, r l = 2.5 ? i d = -1a, v gen = -4.5v r g = 3 ? 965.2 1930.4 ns turn-on rise time t r 1604 3208 turn-off delay time t d(off) 7716 15432 turn-off fall time t f 3452 6904 input capacitance c iss v ds = -10v, v gs = 0v f = 1.0 mhz 36.45 pf output capacitance c oss 128.57 reverse transfer capacitance c rss 15.17 source-drain diode max. diode forward current i s -2.2 a diode forward voltage v sd i s = -1a, v -1 gs = 0v v note : pulse test: pulse width <= 300us, duty cycle<= 2% 3. guaranteed by design; not subject to production testing rev .a 2/3
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. rev .a 3/3 lp3415elt1g , S-LP3415ELT1G
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