HN2S02FU 2014-03-01 1 toshiba diode silicon epitaxial schottky barrier type HN2S02FU high speed switching application z HN2S02FU is composed of 3 independent diodes. z low forward voltage: v f (3) = 0.54v (typ.) z low reverse current: i r = 5 a (max.) absolute maximum ratings (ta = 25c) characteristic symbol rating unit maximum (peak) reverse voltage v rm 45 v reverse voltage v r 40 v maximum (peak) forward current i fm 300 * ma average forward current i o 100 * ma surge current (10ms) i fsm 1 * a power dissipation p 200 ** mw junction temperature t j 125 c storage temperature range t stg ?55 to 125 c operating temperature range t opr ?40 to 100 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant chang e in temperature, etc.) may cause this product to decrease in the reliability significantly ev en if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * :this is absolute maximum rating of single diode (q1 or q2 or q3). in the case of using 2 ro 3 diodes, the absolute maximum ratings per diodes is 75 % of the single diode one. ** :total rating electrical characteristics (q1, q2, q3 common, ta = 25c) characteristic symbol test circuit test condition min typ. max unit v f (1) D i f = 1ma D 0.28 D v f (2) D i f = 10ma D 0.36 D forward voltage v f (3) D i f = 100ma D 0.54 0.60 v reverse current i r D v r = 40v D D 5 a total capacitance c t D v r = 0, f = 1mh z D 18 D pf jedec D jeita D toshiba 1-2t1c weight: 6.2 mg (typ.) unit: mm start of commercial production 2000-01
HN2S02FU 2014-03-01 2 pin assignment (top view) marking a9
HN2S02FU 2014-03-01 3 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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