<^.ml-dondu.ctoi ^pi ., {jnc. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn darlingtion power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 PMD16K100 description ? high dc current gain ? collector-emitter sustaining voltage- vceo(susr 100v(min) ? complement to type pmd17k100 applications ? designed for general purpose amplifier and low frequency switching applications absolute maximum ratings(tc=25c) symbol vcbo vceo vebo ic icp ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current -continuous collector current-peak base current collector power dissipation@tc=25c junction temperature storage temperature value 100 100 5.0 20 40 0.5 200 150 -65-200 unit v v v a a a w ?c 6c thermal characteristics symbol rthj-c parameter thermalresistance, junction to case max 0.875 unit c/w t 5 ? 1 "iv j "* t3 pk ? *w ? r1 -w- r2 silicon npn darlingtion power transistor PMD16K100 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat) vse(sat) vse(on) icer iebo hfe fy cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cut-off current dc current gain current-gain ? bandwidth product output capacitance conditions lc=100ma;lb=0 lc= 10a; lb=40ma lc= 10a; lb=40ma ic=10a;vce=3v vce=100v;rbe=1kq vce= 100v; rbe=1kq, tc=150'c veb= 5v; lc= 0 lc=10a;vce=3v lc= 7a; vce= 3v, f= 1 khz le= 0; vcb= 10v; ftest= 1.0mhz min 100 1000 4 max 2.0 2.8 2.8 1.0 5.0 2.0 20000 400 unit v v v v ma ma mhz pf
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