25 0.3 15 0.3 |? 3 . 2 0 . 1 5 1 . 1 0 . 2 7.5 0.2 4.6 0.15 3.7 0.2 4.7 0.2 9.5 0.2 17.5 0.5 2.8 0.2 0.7 0.1 1.2 0.2 features rating to 1000v prv s u r g e o v e r l o a d r a t i ng t o 17 0 a m pe r e s p e ak ideal for printed circuit board reliable low cost construction utilizing molded plastic technique results in inexpensive product maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. kb j 6da kb j 6 g a kb j 6 j a kb j 6 k a kb j 6 m a units maximum recurrent peak reverse voltage v rrm 200 400 600 800 1000 v max imum rms v oltage v rms 140 280 420 560 700 v max imum dc bloc king v oltage v dc 200 400 600 800 1000 v maximum average forw ard o utp u t c u rr ent @ t c = 1 1 0 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load maximum instantaneous forw ard voltage at 3 . 0 a v f v maximum reverse current @t a =25 a at rated dc blocking voltage @t a = 1 25 ma t y p i c al j u n c t i o n c ap a c i ta n c e p er e l e m e n t c j pf t y p i c al t h e r m a l r e s i s ta n c e (note2) r jc /w operating junction temperature range t j storage temperature range t stg kbj 6 a a kbj 6 b a 50 100 1 . 1 2.device mounte d on 300mm x 300mm x 1.6mm c u plat e heatsink. 1.0 a i f ( a v ) 6 . 0 a kbj 6 a a - - - kbj 6 m a silicon bridge rect ifiers 170 i fsm kbj 4 100 70 voltage range: 50 --- 1000 v curr e n t : 6 . 0 a 35 50 lead solderable per mil-std-202 method 208 polarity:symbols molded on body mounting pos ition: any mechancal data w e i g h t : 0.16 ounces, 4.45 grams notes:1.measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. - 55 ---- + 150 - 55 ---- + 150 i r 45 2.2 10 (note1) dimensions in millimeters diode semiconductor korea www.diode.kr
.4 .6 .8 1.0 1.2 .01 0.1 1.0 1.6 .2 10 1.4 100 3.0 .1 .2 .4 1 .0 2 4 1 0 2 0 4 0 1 00 1 20 40 100 120 140 160 200 t j =25 f=1m hz 50 amperes average forward output current, amperes fi g.2 -- forward derating curve fi g. 1 -- peak forward surge current fig.3 -- typical forward characteristic fig.4 -- typical junction capacitance amperes junction capacitance,pf instantaneous forward current, peak forward surge current, instantaneous forward voltage, volts reverse voltage,volts kbj 6a a - - - kbj 6 m a n u m b e r o f c y c l e s a t 60 h z case t e m p e r a t u r e , 0 11 0 0 85 170 10 8.3ms single half sine wave t j =125 0 2 4 05 01 0 0 6 8 150 10 www.diode.kr diode semiconductor korea
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