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this is information on a product in full production. march 2015 docid025853 rev 3 1/17 17 STGW40H120F2, stgwa40h120f2 trench gate field-stop igbt, h series 1200 v, 40 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 2.1 v (typ.) @ i c = 40 a ? 5 s minimum short-circuit withstand time at t j = 150 c ? safe paralleling ? low thermal resistance applications ? uninterruptible power supply ? welding machines ? photovoltaic inverters ? power factor correction ? high frequency converters description these devices are igbts developed using an advanced proprietary trench gate field-stop structure. these devices are part of the h series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. moreover, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 7 2 7 2 o r q j o h d g v c (2, tab) e (3) g (1) sc12850 table 1. device summary order code marking package packaging STGW40H120F2 g40h120f2 to-247 tube stgwa40h120f2 g40h120f2 to-247 long leads tube www.st.com
contents STGW40H120F2, stgwa40h120f2 2/17 docid025853 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 to-247, STGW40H120F2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 to-247 long leads, stgwa40h120f2 . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 docid025853 rev 3 3/17 STGW40H120F2, stgwa40h120f2 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1200 v i c continuous collector current at t c = 25 c 80 a i c continuous collector current at t c = 100 c 40 a i cp (1) 1. pulse width limited by ma ximum junction temperature pulsed collector current 160 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 468 w t stg storage temperature range -55 to 150 c t j operating junction temperature -55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case 0.32 c/w r thja thermal resistance junction-ambient 50 c/w electrical characteristics STGW40H120F2, stgwa40h120f2 4/17 docid025853 rev 3 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 40 a 2.1 2.6 v v ge = 15 v, i c = 40 a t j = 125 c 2.4 v ge = 15 v, i c = 40 a t j = 175 c 2.5 v ge(th) gate threshold voltage v ce = v ge , i c = 2 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 1200 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -3200- pf c oes output capacitance - 220 - pf c res reverse transfer capacitance -80-pf q g total gate charge v cc = 960 v, i c = 40 a, v ge = 15 v, see figure 24 -158-nc q ge gate-emitter charge - 17 - nc q gc gate-collector charge - 85 - nc docid025853 rev 3 5/17 STGW40H120F2, stgwa40h120f2 electrical characteristics table 6. switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 600 v, i c = 40 a, r g = 10 , v ge = 15 v, see figure 23 18 - ns t r current rise time 37 - ns (di/dt) on turn-on current slope 1755 - a/s t d(off) turn-off delay time 152 - ns t f current fall time 83 - ns e on (1) 1. energy losses include reverse recovery of the external diode. the diode is the same of the co-packed stgw40h120df2 turn-on switching losses 1.0 - mj e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses 1.32 - mj e ts total switching losses 2.32 - mj t d(on) turn-on delay time v ce = 600 v, i c = 40 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 23 36 - ns t r current rise time 20 - ns (di/dt) on turn-on current slope 1580 - a/s t d(off) turn-off delay time 161 - ns t f current fall time 190 - ns e on (1) turn-on switching losses 1.81 - mj e off (2) turn-off switching losses 2.46 - mj e ts total switching losses 4.27 - mj t sc short-circuit withstand time v ce = 600 v, v ge = 15 v, t j = 150 c, 5- s electrical characteristics STGW40H120F2, stgwa40h120f2 6/17 docid025853 rev 3 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature 3 w r w 7 & ? & |