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  silicon epitaxial planar diode SD107WS features z low forward voltage drop. z guard ring die construction for transient protection. z ideal for low logic level applications. z low capacitance. applications z schottky barrier switching sod-323 ordering information type no. marking package code SD107WS sg sod-323 maximum rating @ ta=25 unless otherwise specified parameter symbol limits unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 v rms reverse voltage v r(rms) 21 v forward continuous current i f 100 ma non-repetitive peak forward surge current @t 10ms i fsm 750 ma power dissipation p d 250 mw thermal resistance junction to ambient air r ja 500 /w junction temperature t j 150 storage temperature t stg -65~+150 pb lead-free diode semiconductor korea www.diode.kr
silicon epitaxial planar diode SD107WS electrical characteristics @ ta=25 unless otherwise specified parameter symbol min. typ. max. unit conditions reverse breakdown voltage v ( br ) r 30 v i r =100 a 300 i f =2ma 360 i f =15ma 470 550 i f =50ma forward voltage v f 580 800 mv i f =100ma reverse current i r 1.0 a v r =25v capacitance c t 7 pf v r =10v,f=1mhz package outline plastic surface mounted package sod-323 sod-323 dim min max a 1.275 1.325 b 1.675 1.725 c 0.9 typical d 0.25 0.35 e 0.27 0.37 h 0.02 0.1 j 0.1 typical k 2.6 2.7 all dimensions in mm e k h d c b a j www.diode.kr diode semiconductor korea
silicon epitaxial planar diode SD107WS soldering footprint unit : mm package information device package shipping SD107WS sod-323 3000/tape&reel www.diode.kr diode semiconductor korea


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