p p js 64 13 december 3 1 ,2014 - rev.0 3 page 1 20 v p - c hannel enhancement mode mosfet voltage - 2 0 v current - 4. 4 a sot - 23 6l - 1 unit : inch(mm) f eatures ? r ds(on) , v gs @ - 4.5 v , i d @ - 4. 4 a< 82 m ? ? r ds(on) , v gs @ - 2 .5 v , i d @ - 2.8 a< 110 m ? ? r ds(on) , v gs @ - 1.8 v , i d @ - 1.5 a< 146 m ? ? advan ced trench process technology ? specially designed for switch load, pwm application, etc ? lead free in compliance with eu rohs 2011/65/eu directive. ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: sot - 23 6l - 1 package ? term inals: solderable per mil - std - 750, method 2026 ? approx. weight: 0.0005 ounces, 0.014 grams ? marking: s 13 parameter symbol limit units drain - source voltage v ds - 2 0 v gate - source voltage v gs + 12 v continuous drain current i d - 4. 4 a pulsed drain curr ent i dm - 1 7 . 6 a power dissipation t a =25 o c p d 2 w derate above 25 o c 1 6 m w/ o c operatin g junction an d storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to ambient (note 3 ) r ja 62.5 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p js 64 13 december 3 1 ,2014 - rev.0 3 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs = 0 v, i d = - 25 0ua - 2 0 - - v gate thre shold voltage v gs(th) v ds =v gs , i d = - 250 ua - 0. 4 - 0.65 - 1.2 v drain - source on - state resistance r ds(on) v gs = - 4.5 v, i d = - 4.4 a - 65 82 m gs = - 2.5 v, i d = - 2.8 a - 82 110 v gs = - 1.8 v, i d = - 1.5 a - 104 146 zero gate voltage drain current i dss v ds = - 20 v, v gs =0v - 0.01 - 1 u a gate - source leakage current i gss v gs = + 12 v, v ds =0v - + 10 + 10 0 n a dynamic total gate charge q g v ds = - 10 v, i d = - 4.4 a, v gs = - 10v (note 1 , 2 ) - 7 - nc gate - source charge q gs - 1.1 - gate - drain charge q gd - 1.8 - input capacitance ciss v ds = - 10 v, v gs = 0 v, f=1.0mhz - 522 - pf output capacitance coss - 55 - reverse transfer capacitance crss - 40 - switching turn - on del ay time t d (on) v dd = - 10 v, i d = - 4.4 a, v g s = - 10v, r g = 6 (note 1 , 2 ) - 10 - ns turn - on rise time tr - 4 - turn - o ff delay time t d (off) 35 turn - o ff fall time tf - 5 - drain - source diode maximum continuous drain - source diode forward current i s --- - - - 2.0 a diode forward voltage v sd i s = - 1 .0 a, v gs = 0 v - 0. 75 - 1. 2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins m ounted on a 1 inch fr - 4 with 2oz . square pad of copper 4. the maximum current rating is package limited
p p js 64 13 december 3 1 ,2014 - rev.0 3 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteris tics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body dlode characterlslcs
p p js 64 13 december 3 1 ,2014 - rev.0 3 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 threshold voltage variation with temperature . fig. 9 capacitance vs. drain - source voltage.
p p js 64 13 december 3 1 ,2014 - rev.0 3 page 5 part no packing code version mounting pad layout part no packing code package type packing type marking ver sion PJS6413_ s 1_00001 sot - 23 6l - 1 3k pcs / 7
p p js 64 13 december 3 1 ,2014 - rev.0 3 page 6 disclaimer
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