STC4539 n&p pair enhancement mode mosfet 6.8a / -6.2a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4539 2007. v1 description the STC4539 is the n & p-channel enhancement mode power field effect transistor using high cell density dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. this device is particularly suited for low voltage application such as notebook computer power management an d other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed . pin configuration sop-8 part marking sop-8 ordering information part number package part marking STC4539s8rg sop-8 STC4539 STC4539s8tg sop-8 STC4539 process code : a ~ z ; a ~ z STC4539s8rg s8 : sop-8 ; r : tape reel ; g : pb ? free STC4539s8tg s8 : sop-8 ; t : tube ; g : pb ? free feature n-channel z 30v/6.8a, r ds(on) = 34m @v gs = 10v z 30v/5.6a, r ds(on) = 46m @v gs = 4.5v p-channel z -30v/-6.2a, r ds(on) = 60m @v gs = -10v z -30v/-4.6a, r ds(on) = 80m @v gs = - 4.5v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sop-8 package
STC4539 n&p pair enhancement mode mosfet 6.8a / -6.2a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4539 2007. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical n p unit drain-source voltage v dss 30 -30 v gate-source voltage v gss 20 20 v continuous drain current (tj=150 ) t a =25 t a =70 i d 6.8 5.6 -6.2 -4.6 a pulsed drain current i dm 30 -30 a continuous source current (diode conduction) i s 2.3 -2.3 a power dissipation t a =25 t a =70 p d 2.5 1.6 2.8 1.8 w operation junction temperature t j 150 storgae temperature range t stg -55/150 thermal resistance-junction to ambient t Q 10sec sready state r ja 50 80 52 80 /w
STC4539 n&p pair enhancement mode mosfet 6.8a / -6.2a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4539 2007. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua v gs =0v,i d =-250ua n p 30 -30 v gate threshold voltage v gs(th) v ds =vgs,i d =250 ua v ds =vgs,i d =-250ua n p 1.0 -1.0 3.0 -3.0 v gate leakage current i gss v ds =0v,v gs = 20v v ds =0v,v gs = 20v n p 100 100 na v ds =24v,v gs =0v v ds =-24v,v gs =0v n p 1 -1 zero gate voltage drain current i dss t j =55 v ds =24v,v gs =0v v ds =-24v,v gs =0v n p 5 -5 ua on-state drain current i d(on) v ds R 5v,v gs =10v v ds Q -5v,v gs =-10v n p 30 -30 a v gs = 10v, i d =6.8a v gs =-10v,i d =-5.7a n p 0.026 0.045 0.034 0.060 drain-source on-resistance r ds(on) v gs = 4.5v, i d =5.6a v gs =-4.5v,i d =-4.4a n p 0.036 0.060 0.045 0.080 forward tran conductance g fs v ds =15v,i d =5.9a v ds =-15v,i d =-5.9a n p 15 9 s diode forward voltage v sd i s =1.7a,v gs =0v i s =-1.7a,v gs =0v n p 0.8 -0.8 1.2 -1.2 v dynamic total gate charge q g n p 13 15 20 25 gate-source charge q gs n p 2.3 4.0 gate-drain charge q gd n-channel v ds =15v,v gs =10v i d ? 5.9a p-channel v ds =-15v,v gs =-10v i d ? 5.0a n p 2.0 2.0 nc n p 6.0 7.0 12 15 turn-on time t d(on) tr n p 14 10 25 20 n p 30 40 60 80 turn-off time t d(off) tf n-channel v dd =15v,r l =150 i d =1a,v gen =10v r g =6 p-channel v dd =-15v,r l =150 i d =-1a,v gen =-10v r g =6 n p 5 20 10 40 ns
STC4539 n&p pair enhancement mode mosfet 6.8a / -6.2a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4539 2007. v1 typical characterictics (n mos)
STC4539 n&p pair enhancement mode mosfet 6.8a / -6.2a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4539 2007. v1 typical characterictics (n mos)
STC4539 n&p pair enhancement mode mosfet 6.8a / -6.2a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4539 2007. v1 typical characterictics (n mos)
STC4539 n&p pair enhancement mode mosfet 6.8a / -6.2a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4539 2007. v1 typical characterictics (p mos)
STC4539 n&p pair enhancement mode mosfet 6.8a / -6.2a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4539 2007. v1 typical characterictics (p mos)
STC4539 n&p pair enhancement mode mosfet 6.8a / -6.2a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4539 2007. v1 typical characterictics (p mos)
STC4539 n&p pair enhancement mode mosfet 6.8a / -6.2a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STC4539 2007. v1 sop-8 package outline
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