, o ne, 20 stern ave, springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BCY30, bcy31, bcy32, bcy33, bcy34 pnp silicon transistors jedec to39 package BCY30 series types are silicon pnp transistors manufactured by the epitaxial planar process for general purpose applications requiring lo gain (hfe) and low leakage maximum mtums (ta-25"c unless otherwise noted) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current (peak) base current base current (peak) power dissipation operating and storage junction temperature the rota 1 re s j s tance jlegtb 1 cal character 1 st 1 cs (ta-25 symbol test conditions icbo vcb-i.ov 'edo vgjj^s.ov ?ebo veb-6.ov, ta-iooc bvcbo ?c-100ua bvggy ic^looua, vb**1*5v 8veb0 le*>10qua vceBCY30 min max 50 50 2.5 64 6k 5.0 0.55 1.25 10 35 t.o 60 20 bcy31 min max 50 50 2.5 64 64 5.0 0.55 1.25 15 60 1.0 60 20 64 5.0 -65 noted) bcy32 min max 50 50 2.5 64 64 5.0 0.55 1.25 20 70 1.0 60 20 64 5.0 50 100 1c ? y en 30 250 to +200 0.7 bcy33 min max 50 50 2.5 32 32 5.0 0.55 1.25 10 35 1.0 60 20 32 32 5.0 5.0 bcy34 min max 50 50 2.5 32 32 5.0 0.55 1.25 15 60 1.0 60 20 unit v v v ma m mn ma mw *c *c/w unit na v v v v v mhz p db quality seml-conductors
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