^e.mi-dondu.cto'i lpioaucti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp darlington power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB1383 description ? high dc current gain : hfe= 2000(min.)@ lc= -12a, vce= ^ ? high collector-emitter breakdown voltage- :v(br)ceo=-120v(min) ? complement to type 2sd2083 applications ? designed for driver of solenoid, motor and general purpose applications. absolute maximum ratings(ta=25tj) symbol vcbo vceo vebo ic lew ib pc tj - ^stg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current- continuous collector power dissipation @tc=25'c junction temperature storage temperature range value -120 -120 -6 -25 -40 -2 120 150 -55-150 unit v v v a a a w 'c 'c 1 2 3 ni:l btse 2 collector 3 initt*r to-3pi .uw uql ttf .? rr,?pj ?p' ''i' ^ ?1 u '::,:, :;j -h . f -?-d dim a b c d e f g h j k l n q r s u y mm min 19.60 15.50 4.70 0.9 1.9 d } 3.40 2.90 3,20 0.595 20.00 1.90 10.89 4.90 3.35 1,995 9.9< max 20.10 hli70 4.90 1.10 2.10 3.60 3.20 3.40 0.605 20.70 2.20 10,91 5,10 3.45 2.100 6,1i| 10.10 nj sonii-c oinluctors reserves the right to change tost conditions, parameter limits ami package ilimen.sions \\ithout notice. information f'umi.sh^l hy n.i scini-coiuluctors is hclieveil to he hoili accurate aiul rvliahlc al llie lime ot'i.'.oin-i 10 pres-;. llo\\e\er. n.i seini-cdiuliiclors assumes no re>ponsibilil> lor any errors or oiiii^ioiis vli.scoveral in its iimj. n.i si.nii.( 'imuliicluis eiictniimlies nmomcrs lo \eril\l jalil--lieel-. ;]\v ciinvnl k'liitv placing onl-i's. ouali^y 5emi-con silicon pnp darlington power transistor 2SB1383 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceq vce(sat) vbe(sat) icbo iebo hpe cob fi parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain output capacitance current-gain ? bandwidth product conditions lc= -25ma ,ib= 0 lc=-12a,lb=-24ma lc=-12a,lb=-24ma vcb=-120v, ie=0 vea= -6v, lc= 0 lc= -12a ; vce= -4v ie= 0; vcb= -10v; fte5t= 1mhz le=1a;vce=-12v min -120 2000 typ. 230 50 max -1.8 -2.5 -10 -10 unit v v v ma ma pf mhz switching times tor, tstg ..tf turn-on time storage time fall time lc = -12a,lbi = -lb2=-24ma: vcc= 24v, rl= 2q 1.0 3.0 1.0 m s m s m s
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