050-5606 rev b 6-2004 apt10m19bvfr apt10m19svfr 100v 75a 0.019 ?? ?? ? maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 37.5a) zero gate voltage drain current (v ds = 100v, v gs = 0v) zero gate voltage drain current (v ds = 80v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 100 0.019 250 1000 100 24 apt10m19bvfr_svfr 100 75 300 3040 370 2.96 -55 to 150 300 7530 1500 g d s power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. faster switching avalanche energy rated lower leakage to-247 or surface mount d 3 pak package power mos v ? fredfet fast recovery body diode bvfr svfr to-247 d 3 pak downloaded from: http:///
050-5606 rev b 6-2004 dynamic characteristics apt10m19bvfr_svfr source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -75a) peak diode recovery dv / dt 5 reverse recovery time(i s = -75a, di / dt = 100a/s) reverse recovery charge(i s = -75a, di / dt = 100a/s) peak recovery current(i s = -75a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 75 300 1.3 5 t j = 25c 200 t j = 125c 350 t j = 25c 0.5 t j = 125c 1.0 t j = 25c 8 t j = 125c 12 symbol r jc r ja min typ max 0.34 40 unitc/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 0.53mh, r g = 25 ? , peak i l = 75a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 75a di / dt 700a/s v r 100v t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 50v i d = 75a @ 25c v gs = 15v v dd = 50v i d = 75a @ 25c r g = 1.6 ? min typ max 5100 6120 1900 2660 800 1200 200 300 40 60 92 140 16 32 40 80 50 75 20 40 unit pf nc ns characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.40.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 downloaded from: http:///
050-5606 rev b 6-2004 typical performance curves apt10m19bvfr_svfr 01 02 03 04 05 0 0 1 2 3 4 5 02468 05 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 200160 120 8040 0 2.001.80 1.60 1.40 1.20 1.00 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 200160 120 8040 0 125100 7550 25 0 8060 40 20 0 2.001.75 1.50 1.25 1.00 0.75 0.50 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =9v, 10v & 15v 6v t j = +25c t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c 7v 5.5v 4.5v 5v 8v 6v 5.5v 4.5v 5v 8v v gs =20v v gs =10v 6.5v v gs =15v 10v 6.5v 9v 7v normalized to v gs = 10v @ 0.5 i d [cont.] v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) downloaded from: http:///
050-5606 rev b 6-2004 apt10m19bvfr_svfr apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. to - 247 package outline (bvfr) d 3 pak package outline (svfr) 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 2.40 (.094)2.70 (.106) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. t c =+25c t j =+150c single pulse 300100 5010 51 2016 12 84 0 operation here limited by r ds (on) c rss c oss c iss 100s10ms 100ms dc 1ms t j =+150c t j =+25c v ds =50v v ds =20v v ds =80v i d = 0.5 i d [cont.] 1 5 10 50 100 .01 .1 1 10 50 0 50 100 150 200 250 300 350 0 0.4 0.8 1.2 1.6 2.0 15,00010,000 5,0001,000 500200 100 5010 51 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) downloaded from: http:///
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