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AFT09S200W02Nr3 aft09s200w02gnr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistors n--channel enhancement--mode lateral mosfets these 56 w rf power ldmos transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 mhz. 900 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 1400 ma, p out = 56 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 920 mhz 19.2 34.0 6.9 --35.7 -- 2 5 940 mhz 19.3 35.1 7.0 --36.0 -- 2 0 960 mhz 19.2 36.5 6.8 --34.8 -- 1 3 700 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 1400 ma, p out = 56 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 716 mhz 22.7 37.5 6.9 --34.7 -- 1 8 722 mhz 22.6 37.2 6.9 --34.6 -- 1 9 728 mhz 22.5 36.9 6.9 --34.6 -- 1 8 features ? designed for wide instantaneous bandwidth applications ? greater negative gate--source voltage range for improved class c operation ? able to withstand extremely high output vswr and broadband operating conditions ? optimized for doherty applications ? in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13--inch reel. document number: AFT09S200W02N rev. 0, 4/2014 freescale semiconductor technical data 716?960 mhz, 56 w avg., 28 v airfast rf power ldmos transistors AFT09S200W02Nr3 aft09s200w02gnr3 figure 1. pin connections (top view) rf out /v ds 21 rf in /v gs om--780--2l plastic AFT09S200W02Nr3 om--780g--2l plastic aft09s200w02gnr3 note: exposed backside of the package is the source terminal for the transistor. ? freescale semiconductor, inc., 2014. a ll rights reserved.
2 rf device data freescale semiconductor, inc. AFT09S200W02Nr3 aft09s200w02gnr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +125 ? c operating junction temperature range (1,2) t j --40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 ? c, 56 w cw, 28 vdc, i dq = 1400 ma, 940 mhz r ? jc 0.35 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 729 ? adc) v gs(th) 1.0 1.5 2.0 vdc gate quiescent voltage (v ds =28vdc,i d = 1400 ma) v gs(q) ? 2.15 ? vdc fixture gate quiescent voltage (4) (v dd =28vdc,i d = 1400 ma, measured in functional test) v gg(q) 3.2 4.3 5.2 vdc drain--source on--voltage (v gs =10vdc,i d =4.1adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. v gg =2.0 ? v gs(q) . parameter measured on freescale test fixture, due to resist or divider network on the board. refer to test fixture layout. (continued)
AFT09S200W02Nr3 aft09s200w02gnr3 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, p out = 56 w avg., f = 960 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 18.5 19.2 21.5 db drain efficiency ? d 32.5 36.5 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.5 6.8 ? db adjacent channel power ratio acpr ? --34.8 --33.5 dbc input return loss irl ? -- 1 3 -- 9 db load mismatch (in freescale test fixture, 50 ohm system) i dq = 1400 ma, f = 940 mhz vswr 10:1 at 32 vdc, 260 w cw output power (3 db input overdrive from 180 w cw rated power) no device degradation typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1400 ma, 920?960 mhz bandwidth p out @ 1 db compression point, cw p1db ? 200 ? w am/pm (maximum value measured at the p3db compression point across the 920--960 mhz frequency range) ? ? -- 1 1 . 5 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 140 ? mhz gain flatness in 40 mhz bandwidth @ p out =56wavg. g f ? 0.1 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.018 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) ? p1db ? 0.004 ? db/ ? c 1. part internally matched both on input and output. 2. measurement made with device in straight lead configuration before any lead forming oper ation is applied. lead forming is used for gull wing (gn) parts.
4 rf device data freescale semiconductor, inc. AFT09S200W02Nr3 aft09s200w02gnr3 figure 2. AFT09S200W02Nr3 test circ uit component l ayout ? 920?960 mhz *c1, c6, c7, c18, c19 and c24 are mounted vertically. c1* c2 c3 r1 r2 r3 c6* c7* r4 c4 c5 c8 c9 c10 c11 c14 c25 c17 c16 c19* c18* c21 c20 c23 c22 c24* c15 c13 c12 AFT09S200W02N/--14n rev. 0 d49362 cut out area v gg v gg v dd v dd table 6. AFT09S200W02Nr3 test circuit com ponent designations an d values ? 920?960 mhz part description part number manufacturer c1, c3, c4, c14, c15, c24 47 pf chip capacitors atc100b470jt500xt atc c2, c5, c8, c9, c10, c11, c12, c13 10 ? f chip capacitors c5750x7s2a106m230kb tdk c6, c7 2.7 pf chip capacitors atc100b2r7bt500xt atc c16, c17 5.6 pf chip capacitors atc100b5r6ct500xt atc c18, c19 2.0 pf chip capacitors atc100b2r0bt500xt atc c20, c21 1.0 pf chip capacitors atc100b1r0bt500xt atc c22, c23 0.3 pf chip capacitors atc100b0r3bt500xt atc c25 220 ? f, 100 v electrolytic capacitor eev-fk2a221m panasonic-ecg r1, r2 1000 ? , 1/4 w chip resistors crcw12061k00fkea vishay r3, r4 10 ? , 1/8 w chip resistors rk73h2attd10r0f koa speer pcb rogers ro4350b, 0.020 ? , ? r =3.66 d49362 mtl
AFT09S200W02Nr3 aft09s200w02gnr3 5 rf device data freescale semiconductor, inc. typical characteristics ? 920?960 mhz irl, input return loss (db) 820 acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 56 watts avg. -- 2 3 -- 3 -- 8 -- 1 3 -- 1 8 11 21 20 19 -- 4 2 50 40 30 20 -- 2 2 -- 2 6 -- 3 0 -- 3 4 ? d , drain efficiency (%) g ps , power gain (db) 18 17 16 15 14 13 12 840 860 880 900 920 940 960 980 10 -- 3 8 -- 2 8 acpr (dbc) parc figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 7 5 0 -- 1 5 -- 3 0 -- 6 0 1 200 imd, intermodulatio n distortion (dbc) -- 4 5 im5--u im5--l im7--l im7--u v dd =28vdc,p out = 186 w (pep), i dq = 1400 ma two--tone measurements, (f1 + f2)/2 = center frequency of 940 mhz figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 30 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 15 45 60 90 0 60 50 40 30 20 10 ? d ? drain efficiency (%) -- 3 d b = 5 6 w 75 ? d acpr parc acpr (dbc) -- 6 0 0 -- 1 0 -- 2 0 -- 4 0 -- 3 0 -- 5 0 21 g ps , power gain (db) 20 19 18 17 16 15 g ps -- 1 d b = 2 8 w -- 2 d b = 4 1 w irl parc (db) -- 5 . 2 -- 2 -- 2 . 8 -- 3 . 6 -- 4 . 4 -- 6 -- 5 g ps im3--l 1 v dd =28vdc,i dq = 1400 ma, f = 940 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probabilit y on ccdf ? d 100 im3--u v dd =28vdc,p out =56w(avg.) i dq = 1400 ma, single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf
6 rf device data freescale semiconductor, inc. AFT09S200W02Nr3 aft09s200w02gnr3 typical characteristics ? 920?960 mhz 1 acpr p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 15 21 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 20 19 10 100 200 10 -- 6 0 acpr (dbc) 18 17 16 0 -- 3 0 -- 4 0 -- 5 0 figure 7. broadband frequency response 0 24 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1400 ma 16 12 8 gain (db) 20 4 800 850 900 950 1000 1050 1100 1150 1200 -- 3 5 25 15 5 -- 5 -- 1 5 irl (db) -- 2 5 gain v dd =28vdc,i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probabilit y on ccdf irl 920 mhz 940 mhz 960 mhz 920 mhz 940 mhz 960 mhz 920 mhz 940 mhz 960 mhz g ps
AFT09S200W02Nr3 aft09s200w02gnr3 7 rf device data freescale semiconductor, inc. v dd =28vdc,i dq = 1484 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 1.94 - j4.69 2.09 + j4.54 0.625 - j0.97 17.7 54.0 253 51.4 -6 940 2.29 - j5.04 2.41 + j4.89 0.611 - j1.00 17.4 53.9 245 49.2 -6 960 2.98 - j5.40 2.82 + j5.25 0.653 - j1.12 17.2 53.8 239 49.0 -6 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 1.94 - j4.69 2.09 + j4.64 0.566 - j1.00 15.3 55.2 333 53.8 -9 940 2.29 - j5.04 2.43 + j4.99 0.564 - j1.06 15.0 55.1 325 52.5 -9 960 2.98 - j5.40 2.83 + j5.37 0.578 - j1.11 14.8 55.0 318 52.0 -8 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 8. load pull performance ? maximum power tuning v dd =28vdc,i dq = 1484 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 1.94 - j4.69 2.10 + j4.65 1.36 - j0.05 21.1 51.6 144 65.6 -12 940 2.29 - j5.04 2.45 + j4.99 1.33 - j0.14 20.8 51.6 145 63.6 -11 960 2.98 - j5.40 2.87 + j5.33 1.30 - j0.35 20.2 51.9 154 62.5 -10 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 920 1.94 - j4.69 2.12 + j4.72 1.34 - j0.18 18.9 52.8 191 68.6 -17 940 2.29 - j5.04 2.47 + j5.10 1.30 - j0.13 18.8 52.5 179 67.1 -17 960 2.98 - j5.40 2.89 + j5.44 1.27 - j0.35 18.2 52.8 191 65.6 -15 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 9. load pull performance ? maximum drain efficiency tuning input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. AFT09S200W02Nr3 aft09s200w02gnr3 p1db -- typical load pull contours ? 940 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power imaginary ( ? ) -- 2 1 0 imaginary ( ? ) 1.5 22.5 0.5 3 0.5 -- 0 . 5 -- 1 -- 1 . 5 1 -- 2 1 0 imaginary ( ? ) 1.5 22.5 0.5 3 0.5 -- 0 . 5 -- 1 -- 1 . 5 1 60 58 56 54 52 48 real ( ? ) -- 2 1 0 imaginary ( ? ) 1.5 22.5 0.5 3 0.5 -- 0 . 5 -- 1 -- 1 . 5 1 62 50 48 -- 2 1 0 -- 0 . 5 -- 1 0.5 1 1.5 2 2.5 3 0.5 -- 1 . 5 52.5 53 52 51 50 51.5 53.5 50.5 e p 19 19.5 20 18.5 18 17.5 21.5 21 20.5 -- 4 -- 6 -- 1 8 -- 8 -- 1 0 -- 1 6 -- 1 4 -- 1 2 figure 10. p1db load pull output power contours (dbm) real ( ? ) figure 11. p1db load pull efficiency contours (%) figure 12. p1db load pull gain contours (db) real ( ? ) figure 13. p1db load pull am/pm contours ( ? ) real ( ? ) e p e p e p
AFT09S200W02Nr3 aft09s200w02gnr3 9 rf device data freescale semiconductor, inc. p3db -- typical load pull contours ? 940 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 14. p3db load pull output power contours (dbm) real ( ? ) -- 2 1 0 imaginary ( ? ) 1.5 22.5 0.5 3 0.5 -- 0 . 5 -- 1 -- 1 . 5 1 figure 15. p3db load pull efficiency contours (%) real ( ? ) -- 2 1 0 imaginary ( ? ) 1.5 22.5 0.5 3 0.5 -- 0 . 5 -- 1 -- 1 . 5 1 figure 16. p3db load pull gain contours (db) real ( ? ) -- 2 1 0 imaginary ( ? ) 1.5 22.5 0.5 3 0.5 -- 0 . 5 -- 1 -- 1 . 5 1 figure 17. p3db load pull am/pm contours ( ? ) real ( ? ) -- 2 1 0 imaginary ( ? ) 1.5 22.5 0.5 3 0.5 -- 0 . 5 -- 1 -- 1 . 5 1 54.5 51 52.5 53 53.5 54 55 52 e p 51.5 62 60 58 56 66 64 52 54 56 19.5 19 18.5 18 17.5 17 16.5 16 15.5 -- 6 -- 1 0 -- 2 2 -- 2 0 -- 1 8 -- 1 6 -- 1 4 -- 1 2 -- 8 e p e p e p
10 rf device data freescale semiconductor, inc. AFT09S200W02Nr3 aft09s200w02gnr3 alternative characterization ? 716--728 mhz figure 18. AFT09S200W02Nr3 test ci rcuit component l ayout ? 716?728 mhz *c1, c9, c10, and c27 are mounted vertically. AFT09S200W02N/--14n rev. 0 d49362 c1* c2 c3 r1 r2 c4 r3 r4 c5 c6 c7 c8 c9* c10* c11 c12 c13 c14 c15 c16 c17 c18 c19 c20 c21 c22 c23 c24 c25 c26 c27* c28 cut out area v gg v gg v dd v dd table 7. AFT09S200W02Nr3 test circuit com ponent designations an d values ? 716?728 mhz part description part number manufacturer c1, c4, c6, c12, c13, c17, c18, c27 68 pf chip capacitors atc100b680jt500xt atc c2 1.1 pf chip capacitor atc100b1r1bt500xt atc c3, c5, c11, c14, c15, c16, c19, c20 15 ? f chip capacitors c5750x7s2a156m250kb tdk c7, c8, c21, c22 5.1 pf chip capacitors atc100b5r1ct500xt atc c9, c10 9.1 pf chip capacitors atc100b9r1ct500xt atc c23, c24 6.8 pf chip capacitors atc100b6r8ct500xt atc c25, c26 1.7 pf chip capacitors atc100b1r7bt500xt atc c28 220 ? f, 100 v electrolytic capacitor eev-fk2a221m panasonic-ecg r1, r2 1000 ? , 1/4 w chip resistors crcw12061k00fkea vishay r3, r4 10 ? , 1/8 w chip resistors rk73h2attd10r0f koa speer pcb rogers ro4350b, 0.020 ? , ? r =3.66 d49362 mtl
AFT09S200W02Nr3 aft09s200w02gnr3 11 rf device data freescale semiconductor, inc. alternative characterization?716?728 mhz irl, input return loss (db) 710 acpr f, frequency (mhz) figure 19. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 56 watts avg. -- 2 0 -- 0 -- 5 -- 1 0 -- 1 5 8 28 26 24 -- 4 2 50 40 30 20 -- 2 2 -- 2 6 -- 3 0 -- 3 4 ? d , drain efficiency (%) ? d g ps , power gain (db) 22 20 18 16 14 12 10 725 740 755 770 785 800 815 830 10 -- 3 8 -- 2 5 acpr (dbc) parc v dd =28vdc,p out =56w(avg.) i dq = 1400 ma, single--carrier w--cdma irl parc (db) -- 6 -- 2 -- 3 -- 4 -- 5 -- 7 g ps 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf 1 g ps acpr p out , output power (watts) avg. figure 20. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 19 25 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 24 23 10 100 200 10 -- 6 0 acpr (dbc) 22 21 20 0 -- 3 0 -- 4 0 -- 5 0 figure 21. broadband frequency response 4 28 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1400 ma 20 16 12 gain (db) 24 8 550 600 650 700 750 800 850 900 950 -- 2 5 35 25 15 5 -- 5 irl (db) -- 1 5 gain irl 722 mhz 728 mhz 716 mhz 716 mhz 722 mhz 728 mhz 716 mhz 728 mhz 722 mhz v dd =28vdc,i dq = 1400 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probabilit y on ccdf
12 rf device data freescale semiconductor, inc. AFT09S200W02Nr3 aft09s200w02gnr3 package dimensions
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14 rf device data freescale semiconductor, inc. AFT09S200W02Nr3 aft09s200w02gnr3
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18 rf device data freescale semiconductor, inc. AFT09S200W02Nr3 aft09s200w02gnr3 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 apr. 2014 ? initial release of data sheet
AFT09S200W02Nr3 aft09s200w02gnr3 19 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2014 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: AFT09S200W02N rev. 0, 4/2014

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