elektronische bauelemente SSQ07N60J 7 a, 600 v, r ds(on) 1.3 ? n-channel enhancement mode power mosfet 6-nov-2015 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 220 j rohs compliant product a suffix of -c specifies halogen free description the high voltage mosfet uses an advanced terminatio n scheme to provide enhanced voltage-blocking capabil ity without degrading performance over time. in addition, this advanced mosfet is designed to withstand high energy in aval anche and commutation modes. the new energy efficient design also offers a drain-to-source diode with a fast recovery time. designed for high voltage, high speed switching applications in power suppliers, converters and pwm motor controls, these devices ar e particularly well suited for bridge circuits where diode speed a nd commutating safe operating areas are critical and offer additio nal and safety margin against unexpected voltage transients. features robust high voltage termination avalanche energy specified source-to-drain diode recovery time comparable to a discrete fast recovery diode diode is characterized for the use in bridging circ uits i dss and v ds(on) specified at elevated temperature absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol rating unit drain-source voltage v ds 600 v gate-source voltage v gs 20 v continuous drain current i d 7 a continuous drain-source diode forward current i dm 20 a power dissipation p d 2 w single pulsed avalanche energy 1 e as 530 mj operating junction and storage temperature range t j , t stg 150, -55~150 c thermal resistance rating thermal resistance from junction to ambient r ja 62.5 c/w 1 g 3 s d 2 millimeter millimeter ref. min. max. ref. min. max. a 10.010 10.350 i 4.980 5.180 b 3.735 3.935 j 3.560 3.960 c 2.590 2.890 k 4.470 4.670 d 12.060 12.460 l 1.200 1.400 e 1.170 1.370 m 8.500 8.900 f 0.710 0.910 n 2.520 2.820 g 13.400 13.800 q 0.330 0.650 h 2.540 typ.
elektronische bauelemente SSQ07N60J 7 a, 600 v, r ds(on) 1.3 ? n-channel enhancement mode power mosfet 6-nov-2015 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise noted) parameter symbol min. typ. max. unit test condition drain-source breakdown voltage bv dss 600 - - v v gs =0, i d =250 a - - 1 v ds =600v, v gs =0 drain-source leakage current i dss - - 100 a v ds =480v, v gs =0, t j =125c gate-source leakage forward current i gssf - - 100 na v gsf =30v, v ds =0v gate-source leakage reverse current i gssr - - 100 na v gsr =30v, v ds =0v gate threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a static drain-source on-resistance 2 r ds(on) - - 1.3 v gs =10v, i d =3.5a forward transconductance 2 g fs 5 - - s v ds =50v, i d =3.9a input capacitance c iss - 1380 - output capacitance c oss - 115 - reverse transfer capacitance c rss - 23 - pf v ds =25v v gs =0 f=1mhz turn-on delay time 2 t d(on) - 30 - rise time 2 t r - 80 - turn-off delay time 2 t d(off) - 125 - fall time 2 t f - 85 - ns v dd =300v v gs =10v r g =9.1 i d =7a total gate charge 2 q g - 38 - gate-source charge 2 q gs - 6.4 - gate-drain (miller) change 2 q gd - 15 - nc v ds =480v v gs =10v i d =7a internal drain inductance @measured from the drain lead 0.25 from the package to the center of die l d - 4.5 - nh internal drain inductance @measured from the source lead 0.25 from the package to the source bo nd pad l s - 7.5 - nh source-drain diode characteristics drain-source diode forward voltage 2 v sd - - 1.4 v i s =7a, d is /d i =100a/ s forward turn-on time 3 t on - - - ns reverse recovery time t rr - 415 - ns i s =7a, d is /d i =100a/ s notes: 1. e as condition: l=19.5mh, i l =7a, v dd =50v, v gs =10v, r g =0 , t j =25c. 2. pulse test : pulse width 300 Q s, duty cycle 2%. Q 3. the typical parameter of t on is negligible and is dominated by circuit inductan ce.
elektronische bauelemente SSQ07N60J 7 a, 600 v, r ds(on) 1.3 ? n-channel enhancement mode power mosfet 6-nov-2015 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
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