^zml-londuetoi lpiodueti, ona. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB713 description ? collector-emitter breakdown voltage- : v(br)ceo= -140v(min) ? good linearity of hfe ? high power dissipation ? complement to type 2sd751 applications ? designed for high power audio frequency amplifier use. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icp pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-pulse collector power dissipation @ tc=25c junction temperature storage temperature range value -200 -140 -5 -9 -15 100 150 -55-150 unit v v v a a w ?c c r~ ?15 2 pih:l base "? 11 ? * z coll?ctor '?mm-* 3 elbitter 1 2 3 to-3ph package ; 1 ? i ul- ?uqiry- ?ttlr r h t c b ? ? y-*" 7^ dim a b c d e f g h j k l n q r s u y ?? ?? c -^ ? ,-f-*- *~s 1 ' 'i ?"' j v*-j ^ --r mm win 19.60 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.00 1.90 10.89 4.90 3.35 1.995 5.90 9.90 max 20.10 15.70 4.90 1.10 2.10 3.60 3.20 3.40 0.605 20.70 2.20 10.91 5.10 3.45 2.100 6.10 10.10 fi'-l ? ? d ?n-?- nj semi-conductors reserves the right lo change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going lo press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered iu its use. n.i semi-conductors encourages customers to verily that datasheets are current before placing orders. qualify semi-conductors
silicon pnp power transistor 2SB713 electrical characteristics tc=25c unless otherwise specified symbol vce(sat) vbe(oh) icbo iebo hpe-1 hfe-2 hfe-3 fi parameter collector-emitter saturation voltage base -emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain dc current gain current-gain?bandwidth product conditions lc= -5.0a; ib= -0.7a lc= -7a; vce= -5v vcb=-140v;ie=0 veb= -3v; lc=0 lc= -20ma; vce= -5v lc= -1a; vce= -5v lc= -5a; vce= -5v lc= -0.5a; vce= -5v min 20 40 15 typ. 20 max -2.0 -1.8 -50 -50 200 unit v v u a ma mhz ? hpe-2 classifications r 40-80 q 60-120 p 100-200
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