general feature v ds =60v,i d =100a r ds(on) < 6.5m ? @ v gs =10v (typ:5.7m ? ) special process technology for high esd capability high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation application power switching application hard switched and high frequency circuits uninterruptible power supply schematic diagram marking and pin assignment to-220f top view package marking and ordering information device marking device device package reel size tape width quantity MSN06B0F to-220f - - - absolute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v drain current-continuous i d 100 a drain current-continuous(t c =100 ) i d (100 ) 70 a pulsed drain current i dm 320 a maximum power dissipation p d 45 w derating factor 0.3 w/ single pulse avalanche energy (note 5) e as 550 mj operating junction and st orage temperature range t j ,t stg -55 to 175 MSN06B0F 60v(d-s) n-channel enhancement mode power mos fet MSN06B0F more semiconductor company limited http://www.moresemi.com 1/6 lead free pin configuration
thermal characteristic thermal resistance,junction-to-case (note 2) r jc 3.3 /w electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 60 65 - v zero gate voltage drain current i dss v ds =60v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 3 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =40a - 5.7 6.5 m ? forward transconductance g fs v ds =10v,i d =40a - 50 - s dynamic characteristics (note4) input capacitance c lss - 4800 - pf output capacitance c oss - 440 - pf reverse transfer capacitance c rss v ds =30v,v gs =0v, f=1.0mhz - 260 - pf switching characteristics (note 4) turn-on delay time t d(on) - 16.8 - ns turn-on rise time t r - 10.8 - ns turn-off delay time t d(off) - 55 - ns turn-off fall time t f v dd =30v,i d =1a v gs =10v,r gen =2.5 ? - 13.6 - ns total gate charge q g - 85 - nc gate-source charge q gs - 18 - nc gate-drain charge q gd v ds =30v,i d =30a, v gs =10v - 28 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =20a - - 1.2 v diode forward current (note 2) i s - - - 90 a reverse recovery time t rr - 38 - ns reverse recovery charge qrr tj = 25c, if = 40a di/dt = 100a/ s (note3) - 53 - nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. eas condition tj=25 ,v dd =30v,v g =10v,l=0.5mh,rg=25 ? more semiconductor company limited http://www.moresemi.com 2/6 MSN06B0F
test circuit 1 e as test circuits 2 gate charge test circuit: 3 switch time test circuit: more semiconductor company limited http://www.moresemi.com 3/6 MSN06B0F
typical electrical and therma l characteristics (curves) vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance(m ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) more semiconductor company limited http://www.moresemi.com 4/6 MSN06B0F
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 power de-rating power dissipation (w) c capacitance (nf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance i d - drain current (a) more semiconductor company limited http://www.moresemi.com 5/6 MSN06B0F
to-220f package information more semiconductor company limited http://www.moresemi.com 6/6 MSN06B0F
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