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mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 1 rf device data freescale semiconductor, inc. rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for cdma base station applications with frequencies from 1880 to 2025 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical doherty single--carrier w--cdma performance: v dd =28volts, i dqa = 500 ma, v gsb =1.2vdc,p out = 24 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 1880 mhz 16.0 42.8 8.0 --31.0 1920 mhz 16.0 43.7 8.1 --32.6 2025 mhz 15.9 42.0 8.1 --31.2 ? capable of handling 10:1 vswr, @ 30 vdc, 1920 mhz, 160 watts cw (1) output power (3 db input overdrive from rated p out ) ? typical p out @ 3 db compression point ? 170 watts (1) features ? designed for wide instantaneous bandwidth applications. vbw res ? 240 mhz. ? designed for wideband applications that require 160 mhz signal bandwidth ? production tested in a symmetrical doherty configuration ? 100% par tested for guaranteed output power capability ? characterized with large--signal load--pull parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? ni--780h--4l in tape and reel. r3 suffix = 250 units, 56 mm tape width, 13--inch reel. ? ni--780s--4l, ni--780gs--4l in tape and reel. r3 suffix = 250 units, 32 mm tape width, 13--inch reel. 1. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf. document number: mrf8p20140wh rev. 1, 11/2013 freescale semiconductor technical data 1880--2025 mhz, 24 w avg., 28 v single w--cdma lateral n--channel rf power mosfets mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 ni--780s--4l mrf8p20140whsr3 ni--780h--4l mrf8p20140whr3 (top view) rf outa /v dsa 31 figure 1. pin connections 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb ni--780gs--4l MRF8P20140WGHSR3 ? freescale semiconductor, inc., 2011, 2013. a ll rights reserved.
2 rf device data freescale semiconductor, inc. mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature t c 125 ? c operating junction temperature (1,2) t j 225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 140 0.66 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 ? c, 24 w cw, 28 vdc, i dqa = 500 ma, v gsb = 1.2 vdc, 1920 mhz case temperature 96 ? c, 130 w cw (3) ,28vdc,i dqa = 500 ma, v gsb = 1.2 vdc, 1920 mhz r ? jc 0.68 0.40 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics (4,5) gate threshold voltage (v ds =10vdc,i d = 200 ? adc) v gs(th) 1.1 1.8 2.6 vdc gate quiescent voltage (v ds =28vdc,i da = 500 madc) v gsa(q) ? 2.6 ? vdc fixture gate quiescent voltage (6) (v dd =28vdc,i da = 500 madc, measured in functional test) v gga(q) 4.5 5.2 6.0 vdc drain--source on--voltage (v gs =10vdc,i d =2adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 5. each side of device measured separately. 6. v dda and v ddb must be tied together and powered by a single dc power supply. 7. v gg =2.0xv gs(q) . parameter measured on freescale test fixture, due to resi stive divider network on the board. refer to test circuit schematic. (continued)
mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3,4) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 500 ma, v gsb =1.2vdc, p out = 24 w avg., f1 = 1880 mhz, f2 = 1910 mhz, 2--carrier w--cdm a, iq magnitude clipping, input signal par = 9.8 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 15.0 16.0 18.0 db drain efficiency ? d 37.5 41.2 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.3 7.7 ? db adjacent channel power ratio acpr ? --31.9 --29.5 dbc typical performance over frequency (3) ? (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 500 ma, v gsb =1.2 vdc, p out = 24 w avg., single--carrier w--cdma, iq magnitude cli pping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 1880 mhz 16.0 42.8 8.0 -- 3 1 . 0 1920 mhz 16.0 43.7 8.1 -- 3 2 . 6 2025 mhz 15.9 42.0 8.1 -- 3 1 . 2 typical performances (3) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 500 ma, v gsb =1.2vdc, 1880--2025 mhz bandwidth p out @ 1 db compression point, cw p1db ? 140 ? w p out @ 3 db compression point (5) p3db ? 170 ? w imd symmetry @ 24 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 133 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 240 ? mhz gain flatness in 145 mhz bandwidth @ p out =24wavg. g f ? 0.25 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.013 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) (6) ? p1db ? 0.003 ? db/ ? c 1. v dda and v ddb must be tied together and powered by a single dc power supply. 2. part internally matched both on input and output. 3. measurement made with device in a sy mmetrical doherty configuration. 4. measurement made with device in straight lead configuration before any lead forming oper ation is applied. lead forming is used for gull wing (ghs) parts. 5. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 figure 2. mrf8p 20140whr3(whsr3) test circ uit component layout mrf8p20140w rev. 1.2 cut out area r2 c p v gga r3 c4 c7 c6 r6 c26 c2* c3* c1 c5 r7 z1 c9 r1 c11 c10 c8 r5 r4 c24 c25 v ggb v ddb c22 c20 c21 c13* c17 c12* c23 c14 c16 c15 c18 c19 v dda note 1: * denotes that c2, c3, c12 and c13 are mounted vertically. note 2: v dda and v ddb must be tied together and powered by a single dc power supply. table 5. mrf8p 20140whr3(whsr3) test circuit com ponent designations and values part description part number manufacturer c1 0.6 pf chip capacitor atc600f0r6bt250xt atc c2, c3 8.2 pf chip capacitors atc600f8r2bt250xt atc c4, c8, c18, c24 10 ? f, 50 v chip capacitors grm55dr61h106ka88l murata c5 1.2 pf chip capacitor atc600f1r2bt250xt atc c6, c10, c12, c13, c14, c20 12 pf chip capacitors atc600f120jt250xt atc c7, c11 10 ? f, 32 v chip capacitors grm32er61h106ka12l murata c9, c17 0.1 pf chip capacitors atc600f0r1bt250xt atc c15, c21 6.8 ? f, 50 v chip capacitors c4532x7r1h685kt tdk c16, c22 2.2 ? f, 100 v chip capacitors c3225x7r2a225kt tdk c19, c25 220 ? f, 100 v chip capacitors eev--fk2a221m panasonic--ecg c23 0.2 pf chip capacitor atc600f0r2bt250xt atc c26 1.5 pf chip capacitor atc600f1r5bt250xt atc r1 50 ? , chip resistor atccw12010t0050gbk atc r2, r3, r4, r5 1.5 k ? , 1/4 w chip resistors crcw12061k50fkea vishay r6, r7 2.2 ? , 1/4 w chip resistors crcw12062r2fnea vishay z1 1700--2000 mhz band 90 ? , 3 db hybrid coupler 1p503s anaren pcb 0.020 ? , ? r =3.5 r04350b rogers
mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 5 rf device data freescale semiconductor, inc. 4 ? 2 ? 2 ? 4 ? 2 ? 2 ? single--ended quadrature combined doherty push--pull 4 ? 4 ? 4 ? 4 ? figure 3. possible circuit topologies
6 rf device data freescale semiconductor, inc. mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 typical characteristics parc (db) 1880 g ps acpr f, frequency (mhz) figure 4. 2--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 24 watts avg. -- 1 . 8 -- 1 -- 1 . 2 -- 1 . 4 -- 1 . 6 15 17 16.8 16.6 -- 3 5 44 42 40 38 -- 3 0 -- 3 1 -- 3 2 -- 3 3 ? d , drain efficiency (%) ? d g ps , power gain (db) 16.4 16.2 16 15.8 15.6 15.4 15.2 1900 1920 1940 1960 1980 2000 2020 2040 36 -- 3 4 -- 2 im3, third order intermodulation (dbc) -- 2 9 -- 2 5 -- 2 6 -- 2 7 -- 2 8 -- 3 0 acpr (dbc) im3 parc v dd =28vdc,p out =24w(avg.),i dqa = 500 ma v gsb = 1.2 vdc, 2--carrier w--cdma, 3.84 mhz channel bandwidth, 30 mhz carrier spacing, input signal par = 9.8 db @ 0. 01% probab ility on ccdf parc (db) 1880 g ps acpr f, frequency (mhz) figure 5. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 24 watts avg. -- 2 -- 1 . 6 -- 1 . 7 -- 1 . 8 -- 1 . 9 15 17 16.8 16.6 -- 3 5 43 42 41 40 -- 3 0 -- 3 1 -- 3 2 -- 3 3 ? d , drain efficiency (%) ? d g ps , power gain (db) 16.4 16.2 16 15.8 15.6 15.4 15.2 1900 1920 1940 1960 1980 2000 2020 2040 39 -- 3 4 -- 2 . 1 acpr (dbc) parc figure 6. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 7 0 -- 2 0 -- 3 0 -- 4 0 -- 6 0 1 300 imd, intermodulatio n distortion (dbc) -- 5 0 im3--u im3--l im5--u im5--l im7--l im7--u 100 v dd =28vdc,p out = 24 w (pep) i dqa = 500 ma, v gsb =1.2vdc v dd =28vdc,p out =24w(avg.),i dqa = 500 ma v gsb = 1.2 vdc, 2--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probabilit y on ccdf two--tone measurements (f1 + f2)/2 = center frequency of 1920 mhz
mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 7 rf device data freescale semiconductor, inc. typical characteristics figure 7. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 20 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 10 30 40 60 0 60 50 40 30 20 10 ? d ? drain efficiency (%) -- 3 d b = 3 5 w 50 ? d acpr parc acpr (dbc) -- 3 4 -- 2 2 -- 2 4 -- 2 6 -- 3 0 -- 2 8 -- 3 2 16.5 g ps , power gain (db) 16 15.5 15 14.5 14 13.5 g ps input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf v dd =28vdc,i dqa = 500 ma, v gsb = 1.2 vdc, f = 1920 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth --1db=14.5w -- 2 d b = 2 5 w 1 g ps acpr p out , output power (watts) avg. figure 8. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 8 20 0 60 50 40 30 20 ? d , drain efficiency (%) ? d g ps , power gain (db) 18 16 10 100 200 10 -- 6 0 acpr (dbc) 14 12 10 0 -- 3 0 -- 4 0 -- 5 0 v dd =28vdc,i dqa = 500 ma v gsb = 1.2 vdc, single--carrier w--cdma 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf 1880 mhz 1 p out , output power (watts) avg. figure9.2--carrierw--cdmapowergain,im3,im5,im7 versus output power 8 20 -- 7 0 -- 1 0 -- 2 0 -- 3 0 -- 4 0 -- 5 0 im3, im5, im7 (dbc) g ps , power gain (db) 18 16 10 200 -- 6 0 14 12 10 figure 10. broadband frequency response 0 18 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 500 ma v gsb =1.2vdc 12 9 6 gain (db) 15 3 1650 1725 1800 1875 1950 2025 2100 2175 2250 100 im3--u im3--l im5--u im5--l im7--u im7--l input signal par = 9.8 db @ 0.01% probab ility on ccdf v dd =28vdc,i dqa = 500 ma, v gsb = 1.2 vdc, f1 = 1880 mhz f2 = 1910 mhz, 2--carrier w--cdma, 3.84 mhz channel bandwidth 2025 mhz 1920 mhz 1880 mhz 1920 mhz 2025 mhz 1880 mhz 2025 mhz 1920 mhz g ps
8 rf device data freescale semiconductor, inc. mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 w--cdma test signal 10 0.0001 100 0 peak--to--average (db) figure 11. ccdf w--cdma iq magnitude clipping, 2--carrier test signal 10 1 0.1 0.01 0.001 2468 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. input signal par = 9.8 db @ 0.01% probabilit y on ccdf input signal 12 figure 12. 2--carrier w--cdma spectrum f, frequency (mhz) -- 11 0 --120 -- 7 0 -- 2 0 -- 8 0 -- 6 0 -- 5 0 (db) -- 9 0 --100 -- 4 0 -- 3 0 3.84 mhz channel bw -- i m 3 i n 3.84 mhz bw +im3 in 3.84 mhz bw --acpr in 3.84 mhz bw +acpr in 3.84 mhz bw 60 15 45 30 0 -- 1 5 -- 3 0 -- 4 5 -- 6 0 --75 75 10 0.0001 100 0 peak--to--average (db) figure 13. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 2468 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. input signal par = 9.9 db @ 0.01% probabilit y on ccdf input signal 12 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 14. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0
mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 9 rf device data freescale semiconductor, inc. v dd =28vdc,i dqa = 500 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max output power p1db p3db (dbm) (w) ? d (%) (dbm) (w) ? d (%) 1880 5.35 -- j5.03 2.36 -- j4.84 49.7 93 53.7 50.5 113 56.2 1930 7.39 -- j5.10 2.57 -- j4.73 50.0 100 56.9 50.8 119 59.3 1990 9.46 -- j1.71 2.48 -- j5.11 50.0 100 56.4 50.7 118 58.6 2025 9.30 + j0.80 2.50 -- j5.30 50.0 100 56.7 50.7 118 59.1 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 15. carrier side load pull performance ? maximum p1db tuning z source z load input load pull tuner device under test output load pull tuner v dd =28vdc,i dqa = 500 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max drain efficiency p1db p3db (dbm) (w) ? d (%) (dbm) (w) ? d (%) 1880 5.35 -- j5.03 6.91 -- j4.37 47.6 57 64.6 48.2 67 65.2 1930 7.39 -- j5.10 6.36 -- j3.60 48.0 63 67.3 48.6 72 68.3 1990 9.46 -- j1.71 5.61 -- j3.11 48.0 63 67.2 48.6 72 67.8 2025 9.30 + j0.80 5.28 -- j2.88 47.9 61 66.5 48.5 70 67.3 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 16. carrier side load pull performance ? maximum efficiency tuning z source z load input load pull tuner device under test output load pull tuner
10 rf device data freescale semiconductor, inc. mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 package dimensions
mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3
mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 13 rf device data freescale semiconductor, inc.
14 rf device data freescale semiconductor, inc. mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3
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16 rf device data freescale semiconductor, inc. mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 apr. 2011 ? initial release of data sheet 1 nov. 2013 ? added part number MRF8P20140WGHSR3 (ni--780gs--4l), p. 1 ? table 3, esd protection characte ristics, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 2 ? added ni--780gs--4l package isometric, p. 1, and mechanical outline, pp. 14--15 ? added electromigration mttf calculator and rf hi gh power model availability to product software, p. 16
mrf8p20140whr3 mrf8p20140whsr3 MRF8P20140WGHSR3 17 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. all other product or service names are the property of their respective owners. e 2013 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: mrf8p20140wh rev. 1, 11/2013

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