t4 - lds -0 212 , rev . 2 (1 2 1516 ) ?201 2 micr osemi corporation page 1 of 6 2n7334 available on commercial versions quad n- channel mosfet qualified per mil - prf - 19500/59 7 qualified levels : jan, jantx, and jantxv description this 2n7334 device is military qual ified up to a jan txv level for high - reliability applications. microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. mo - 036ab package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n7334 number . ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/ 59 7. ? rohs compliant versions available (commercial grade only) . applica tions / benefits ? high f requency o peration. ? lightweight. ? esd rated to class 1 a. maximum ratings @ t a = +25 oc unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit operating & storage temperature t op , t stg - 55 to +150 c thermal resistance, junction to ambient 1 die 4 d ie r ? ja 90 50 oc /w gate C source voltage v gs 20 v continuous drain current @ t c = +25 c i d1 1.0 a continuous drain current @ t c = +100 c i d2 0.6 a max. power dissipation @ t c = +25 oc (free air) (1) p t 1.4 w maximum drain to source on state resist ance ( 1, 2) @ t j = +25 oc @ t j = +150 oc max r ds(on) 0.70 1.4 ? collector efficiency i s 1.0 a single p ulse a valanche e nergy c apability e as 75 mj repetitive a valanche e nergy c apability e ar .14 mj rated a valanche c urrent (repetitive and nonrepetitive) i ar 1.0 a off - state current i dm 4.0 a (pk) notes : 1. derated l inearly 11 mw/c for t c > +25 c . 2. the following formula derives the maximum theoretical i d limit. i d is limited by package and internal wires a nd may also be limited by pi n diameter: 3. i dm = 4 x i d1 as calculated in note 2. downloaded from: http:///
t4 - lds -0 212 , rev . 2 (1 2 1516 ) ?201 2 micr osemi corporation page 2 of 6 2n7334 mechanical and packaging ? case: ceramic, lid: alloy 42, au over ni plating. ? terminals: alloy 42, au over ni plating, solder dipped. rohs compliant without solder dipping o n commercial grade o nly . ? marking: manufacturers id, part number, date code. ? weight: approx. 1.3 g rams. ? see p ackage d imensions on last page. part nomenclature jan 2n733 4 (e3) reliability level jan =jan level jantx =jantx leve l jantxv =jantxv level blank = commercial jedec type number ( see electrical characteristic s t able ) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant symb ols & definitions symbol definition i d drain current i f forward current t c case temperature v dd drain supply voltage v ds drain to source voltage v gs gate to source voltage downloaded from: http:///
t4 - lds -0 212 , rev . 2 (1 2 1516 ) ?201 2 micr osemi corporation page 3 of 6 2n7334 electrical characteristics @ t a = +25 c, unless otherwise noted param eters / test conditions symbol min. max. unit off charactertics drain - source breakdown voltage v gs = 0 v, i d = 1m a v (br)dss 100 v gate - source voltage (threshold) v ds v gs , i d = 0.25ma v ds v gs , i d = 0.25 ma, t j = +125 c v ds v gs , i d = 0.25 ma, t j = - 55 c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125 c i gss1 i gss2 100 200 na drain current v gs = 0 v, v ds = 80 % of rated v ds v gs = 0 v, v ds = 80 % of rated v ds , t j = +125 c i dss1 i dss2 25 0.25 a ma static drain - source on - state resistance v gs = 10 v, i d = 0.6 0 a v gs = 10 v, i d = 1. 0 a t j = +125 c v gs = 10 v, i d = 0.60 a r ds(on)1 r ds(on)2 r ds(on)3 0.70 0.80 1.4 ? ? ? diode forward voltage v gs = 0 v, i d = 1.0 a v sd 1 .5 v dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: condition b on - state gate charge gate to source charge gate to drain charge q g(on) q gs q gd 15 7.5 7.5 nc switching charact eristics parameters / test conditions symbol min. max. unit switching time tests: turn - on delay time rinse time turn - off delay time fall time i d = 1.0 a, v gs = 10 v, gate drive impedance = 7.5 ? , v dd = 50 v t d(on) t r t d(off) t f 20 25 40 40 ns diode reverse recovery time di/dt = 100 a/s, v dd 30 v, i d = 1.0 a t rr 200 ns downloaded from: http:///
t4 - lds -0 212 , rev . 2 (1 2 1516 ) ?201 2 micr osemi corporation page 4 of 6 2n7334 graphs t 1 , r ectangle p ulse d uration (seconds ) figure 1 C thermal response curves t c , case temperature (c) figure 2 - maximum d rain c urrent vs c ase t emperatur e i d drain current (a mperes ) t hermal r esponse (z th ja ) downloaded from: http:///
t4 - lds -0 212 , rev . 2 (1 2 1516 ) ?201 2 micr osemi corporation page 5 of 6 2n7334 graphs (continued) v ds , drain - to - source voltage (volts) figure 3 - maximum safe operating area i d drain current (amperes) downloaded from: http:///
t4 - lds -0 212 , rev . 2 (1 2 1516 ) ?201 2 micr osemi corporation page 6 of 6 2n7334 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. refer to applicable symbol list. 4. dimensioning and tolerancing in accordance with asme y14.5. 5. leads within +/ - .005 inch (0.13 mm) radius of true position (tp) at gauge plane with maximum material condi tion and un it installed. 6. ls 1 and ls applies in zone ll 1 when unit installed. 7. applies to spread leads prior to installation. 8. n is the number of terminal positions. 9. outlines on which the seating plane is coincident with the base plane ( lh = 0), terminals lead standoffs are not required, and l h 1 may equal lw along any part of the lead above the seating/base plane. 10. bw 1 does not include particles of package materials. 11. this dimension shall be measured with the device seated in the seating plane gauge jedec outline no. gs - 3. dimensions symbol inch millimeters notes min max min max bh .105 .175 2.67 4.45 11 bl .690 .770 17.53 19.56 bw .290 .325 7.37 8.26 bw 1 .280 .310 7.11 7.87 10 lh .025 .055 0.64 1.40 9, 11 lt .008 .012 0.203 0.305 lw .015 .021 0.381 0.533 9 lw 1 .038 .060 0.97 1.52 dimensions symbol inch millimeters notes min max min max ls .300 tp 7.62 tp 5, 6 ls1 .100 tp 2.54 tp 5, 6 ll .125 .175 3.18 4.45 11 ll 1 .000 .030 0.00 0.76 0 15 0 15 7 r .010 0.25 s .030 .095 0.76 2.41 n 14 14 8 downloaded from: http:///
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