elektronische bauelemente SSF3134KW 0.75a, 20v, r ds(on) 380 m ? n-channel enhancement mode power mosfet 10-jul-2017 rev. d page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description SSF3134KW provides the designers with the be st combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. sot-323 p ackage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size sot-323 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current i d 0.75 a pulsed drain current 1 i dm 3 a maximum power dissipation 2 p d 200 mw thermal resistance from junction to ambient r ja 625 c / w operating junction and storage temperature t j , t stg 150, -55~150 c sot-323 34k top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 1.80 2.20 g 0.1 ref. b 1.80 2.45 h 0.525 ref. c 1.1 1.4 j 0.08 0.25 d 0.80 1.10 k 0.8 typ. e 1.20 1.40 l 0.65 typ. f 0.15 0.40
elektronische bauelemente SSF3134KW 0.75a, 20v, r ds(on) 380 m ? n-channel enhancement mode power mosfet 10-jul-2017 rev. d page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition static characteristics drain-source breakdown voltage bv dss 20 - - v v gs =0, i d =250 a gate-threshold voltage 3 v gs(th) 0.35 - 1.1 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 20 a v ds =0, v gs = 10v drain-source leakage current i dss - - 1 a v ds =20v, v gs =0 forward transconductance g fs 1 - - s v ds =10v, i d =0.8a - - 380 v gs =4.5v, i d =650ma - - 450 v gs =2.5v, i d =550ma static drain-source on-resistance 3 r ds(on) - - 800 m v gs =1.8v, i d =450ma switching characteristics input capacitance c iss - 120 - output capacitance c oss - 20 - reverse transfer capacitance c rss - 15 - pf v ds =16v v gs =0 f=1mhz total gate charge q g - 0.88 - gate-source charge q gs - 0.14 - gate-drain charge q gd - 0.29 - nc i d =0.606a v ds =10v v gs =4.5v turn-on delay time t d(on) - 6.7 - rise time t r - 4.8 - turn-off delay time t d(off) - 17.3 - fall time t f - 7.4 - ns v dd =10v v gen =4.5v r g =10 i d =0.5a drain-source diode characteristics diode forward voltage 3 v sd - - 1.2 v i s =0.15a, v gs =0 notes: 1. repetitive rating: pulse width is limited by the maximum junction temperature. 2. this test is performed without heat sink at t a =25c. 3. pulse test: pulse width 300s, duty cycle 0.5%.
elektronische bauelemente SSF3134KW 0.75a, 20v, r ds(on) 380 m ? n-channel enhancement mode power mosfet 10-jul-2017 rev. d page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSF3134KW 0.75a, 20v, r ds(on) 380 m ? n-channel enhancement mode power mosfet 10-jul-2017 rev. d page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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