nte2576 (npn) & NTE2577 (pnp) silicon complementary transistors audio output driver absolute maximum ratings: (t a = +25 c unless otherwise specified) collector?base voltage, v cbo 180v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector?emitter voltage, v ceo 180v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter?base voltage, v ebo 6v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector current, i c 2a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . base current, i b 1a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation (t c = +25 c), p c 20w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature, t j +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?55 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . electrical characteristics: (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit collector cutoff current i cbo v cb = 180v ? ? 10 a emitter cutoff current i ebo v eb = 6v ? ? 10 a collector?emitter breakdown voltage v (br)ceo i c = 10ma 180 ? ? v dc current gain h fe v ce = 10v, i c = 700ma 60 ? 240 collector?emitter saturation voltage v ce(sat) i c = 700ma, i b = 70ma ? ? 1.0 v transition frequency f t v ce = 12v, i e = 700ma ? 60 ? mhz output capacitance c ob v cb = 10v, f = 1mhz ? 30 ? pf
.402 (10.2) max .224 (5.7) max .295 (7.5) .165 (4.2) .669 (17.0) max .531 (13.5) min .100 (2.54) .059 (1.5) max .114 (2.9) max .173 (4.4) max bce .122 (3.1) dia note: tab is isolated
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