? semiconductor components industries, llc, 2011 november, 2011 ? rev. 2 1 publication order number: NSS40301MZ4/d NSS40301MZ4, nsv40301mz4t1g bipolar power transistors 40 v, 3.0 a, low v ce(sat) npn transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc ? dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? aec ? q101 qualified and ppap capable ? nsv prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot ? 223 case 318e style 1 marking diagram schematic c 2, 4 b 1 e 3 top view pinout c ce b 4 123 npn transistor 3.0 amperes 40 volts, 2.0 watts see detailed ordering and shipping information in the package dimensions section on p age 2 of this data sheet. ordering information pin assignment http://onsemi.com 1 40301 ayw a = assembly location y year w = work week 40301 = specific device code = pb ? free package
NSS40301MZ4, nsv40301mz4t1g http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 ? c unless otherwise noted) ???????????????????????? ???????????????????????? ???????????????????????? rating ???? ???? ???? ???? ???? ???? ???? ???? ???? ???????????????????????? ???????????????????????? collector ? emitter voltage ???? ???? ???? ???? ???? ???? ???????????????????????? ???????????????????????? ???????????????????????? ? base voltage ???? ???? ???? ???? ???? ???? ???? ???? ???? ???????????????????????? ???????????????????????? ???????????????????????? ? base voltage ???? ???? ???? ???? ???? ???? ???? ???? ???? ???????????????????????? ???????????????????????? ? continuous ???? ???? ???? ???? ???? ???? ???????????????????????? ???????????????????????? ???????????????????????? ???????????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???????????????????????? ???????????????????????? ???????????????????????? ???????????????????????? ? c mounted on 1? sq. (645 sq. mm) collector pad on fr ? 4 bd material to t a l p d @ t a = 25 ? c mounted on 0.012? sq. (7.6 sq. mm) collector pad on fr ? 4 bd material ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???????????????????????? ???????????????????????? ???????????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ???? ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. ????????????????????????????????? ????????????????????????????????? ????????????????????????????????? thermal characteristics ???????????????????????? ???????????????????????? ???? ???? ???? ???? ???? ???? ???????????????????????? ???????????????????????? ???????????????????????? ???????????????????????? thermal resistance, junction ? to ? case junction ? to ? ambient on 1? sq. (645 sq. mm) collector pad on fr ? 4 bd material junction ? to ? ambient on 0.012? sq. (7.6 sq. mm) collector pad on fr ? 4 bd material ???? ???? ???? ???? ja r ja ???? ???? ???? ???? ???? ???? ???? ???? ? c/w ???????????????????????? ???????????????????????? ???? ???? ???? ???? ???? ???? ? c ordering information device package shipping ? NSS40301MZ4t1g sot ? 223 (pb ? free) 1,000 / tape & reel nsv40301mz4t1g sot ? 223 (pb ? free) 1,000 / tape & reel NSS40301MZ4t3g sot ? 223 (pb ? free) 4,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NSS40301MZ4, nsv40301mz4t1g http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? ????????????????????????????????? (t c = 25 ? c unless otherwise noted) ?????????????????? ?????????????????? characteristic ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ????????????????????????????????? ????????????????????????????????? ?????????????????? ?????????????????? ?????????????????? collector ? emitter sustaining voltage (i c = 10 madc, i b = 0 adc) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ?????????????????? ?????????????????? ? base voltage (i e = 50 adc, i c = 0 adc) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ?????????????????? ?????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ????????????????????????????????? ????????????????????????????????? ????????????????????????????????? on characteristics (note 1) ?????????????????? ?????????????????? ?????????????????? ?????????????????? ? emitter saturation voltage (i c = 0.5 adc, i b = 50 madc) (i c = 1.0 adc, i b = 20 madc) (i c = 3.0 adc, i b = 0.3 adc) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ? emitter saturation voltage (i c = 1.0 adc, i b = 0.1 adc) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ? emitter on voltage (i c = 1.0 adc, v ce = 2.0 vdc) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ?????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????? ?????????????????? ?????????????????? output capacitance (v cb = 10 vdc, f = 1.0 mhz) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ? gain ? bandwidth product (note 2) (i c = 500 ma, v ce = 10 v, f test = 1.0 mhz) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ? 300 s, duty cycle ? 2%. 2. f t = |h fe | ? f test figure 1. power derating t j , temperature ( ? c) 150 100 75 50 25 0 0.5 1.0 1.5 2.0 2.5 p d , power dissipation (w) t c 125 t a
NSS40301MZ4, nsv40301mz4t1g http://onsemi.com 4 typical characteristics figure 2. dc current gain figure 3. dc current gain i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 10 1 0.1 0.01 0.001 0 100 200 300 500 600 700 figure 4. collector ? emitter saturation voltage figure 5. collector ? emitter saturation voltage i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0.001 0.01 0.1 1 10 1 0.1 0.01 0.001 0.01 0.1 1 figure 6. collector saturation region figure 7. v be(on) voltage i b , base current (a) i c , collector current (a) 0.001 0.0001 0.01 0.1 1 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 1.2 h fe , dc current gain h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v ce(sat) , collector ? emitter saturation voltage (v) v ce(sat) , collector ? emitter saturation voltage (v) v be(on) , emitter ? base voltage (v) v ce = 1 v 150 ? c ? 55 ? c 25 ? c v ce = 4 v 150 ? c ? 55 ? c 25 ? c 400 i c /i b = 10 150 ? c ? 55 ? c 25 ? c i c /i b = 50 150 ? c ? 55 ? c 25 ? c 0.01 0.1 1.0 0.8 1.0 v ce = 2 v 150 ? c ? 55 ? c 25 ? c i c = 3 a 0.1 a 1 a 0.5 a 2 a
NSS40301MZ4, nsv40301mz4t1g http://onsemi.com 5 typical characteristics figure 8. base ? emitter saturation voltage figure 9. base ? emitter saturation voltage i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.2 1.4 figure 10. input capacitance figure 11. output capacitance v eb , emitter base voltage (v) v cb , collector base voltage (v) 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 70 60 50 40 30 20 10 0 0 20 40 60 80 100 figure 12. current ? gain bandwidth product figure 13. safe operating area i c , collector current (a) v ce , collector ? emitter voltage (v) 10 0.1 0.01 0.001 0 240 40 120 200 100 10 1 0.01 0.1 1 10 v be(sat) , emitter ? base saturation voltage (v) c ibo , input capacitance (pf) c obo , output capacitance (pf) f ta u , current bandwidth product (mhz) i c , collector current (a) 0.4 0.6 0.8 1.0 1.2 i c /i b = 10 150 ? c ? 55 ? c 25 ? c i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.2 1.4 v be(sat) , emitter ? base saturation voltage (v) 0.4 0.6 0.8 1.0 1.2 i c /i b = 50 150 ? c ? 55 ? c 25 ? c t j = 25 ? c f test = 1 mhz t j = 25 ? c f test = 1 mhz 80 160 t j = 25 ? c f test = 1 mhz v ce = 10 v 0.5 ms 10 ms 100 ms 1 ms 400 450 8 7 90 80 1
NSS40301MZ4, nsv40301mz4t1g http://onsemi.com 6 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 ? 1 0 ? 0 ? 1 0 ? l l 0.20 ??? ??? 0.008 ??? ??? style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 NSS40301MZ4/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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