? 2017 ixys corporation, all rights reserved ds100772a(12/17) IXFJ20N85X n-channel enhancement mode avalanche rated symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 850 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 850 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c 9.5 a i dm t c = 25 ? c, pulse width limited by t jm 50.0 a i a t c = 25 ? c10a e as t c = 25 ? c 800 mj dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 50 v/ns p d t c = 25 ? c 110 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c f c mounting torque 1.13 / 10 nm/lb.in v isol 50/60 hz, rm, t = 1min 2500 v~ weight 5 g features ? silicon chip on direct-copper bond (dcb) substrate ? isolated mounting surface ? 2500v~ electrical isolation ? avalanche rated ? low r ds(on) and q g ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? laser drivers ? ac and dc motor drives ? robotics and servo controls (electrically isolated tab) advance technical information x-class hiperfet tm power mosfet v dss = 850v i d25 = 9.5a r ds(on) ? ? ? ? ? 360m ? ? ? ? ? symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 850 v v gs(th) v ds = v gs , i d = 2.5ma 3.5 5.5 v i gss v gs = ? 30v, v ds = 0v ?????????????? 100 na i dss v ds = v dss , v gs = 0v 25 ? a t j = 125 ? c 1.5 ma r ds(on) v gs = 10v, i d = 10a, note 1 360 m ? g = gate d = drain s = source g s d iso to-247 tm isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. IXFJ20N85X ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. iso to-247 (ixfj) outline pins: 1 = gate 2 = drain 3 = source 4 = isolated advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys re- serves the right to change limits, test conditions, and dimensions without notice. source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 20 a i sm repetitive, pulse width limited by t jm 80 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 190 ns q rm 1.6 ???????????? c i rm 16.5 a i f = 10a, -di/dt = 100a/ s v r = 100v symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 10a, note 1 6 10 s r gi gate input resistance 0.8 ? c iss 1660 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1730 pf c rss 24 pf c o(er) 67 pf c o(tr) 270 pf t d(on) 20 ns t r 28 ns t d(off) 44 ns t f 20 ns q g(on) 63 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 10a 12 nc q gd 26 nc r thjc 1.13 ? c/w r thcs 0.30 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 10a r g = 5 ? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss
? 2017 ixys corporation, all rights reserved IXFJ20N85X fig. 1. output characteristics @ t j = 25 o c 0 2 4 6 8 10 12 14 16 18 20 01234567 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 9v fig. 3. output characteristics @ t j = 125 o c 0 2 4 6 8 10 12 14 16 18 20 024681012141618 v ds - volts i d - amperes v gs = 10v 7v 6v 9v 8v fig. 4. r ds(on) normalized to i d = 10a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 10a i d = 20a fig. 5. r ds(on) normalized to i d = 10a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 5 10 15 20 25 30 35 i d - amperes r ds(on) - normalized v gs = 10v t j = 125 o c t j = 25 o c fig. 2. extended output characteristics @ t j = 25 o c 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 15v 7v 8v 9v 10v 11v fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th)
ixys reserves the right to change limits, test conditions, and dimensions. IXFJ20N85X fig. 8. input admittance 0 2 4 6 8 10 12 14 16 18 20 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c fig. 7. maximum drain current vs. case temperature 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 9. transconductance 0 2 4 6 8 10 12 14 16 18 02468101214161820 i d - amperes g f s - siemens t j = - 40 o c 125 o c 25 o c fig. 10. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 45 50 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125 o c t j = 25 o c fig. 11. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 55 60 65 q g - nanocoulombs v gs - volts v ds = 425v i d = 10a i g = 10ma fig. 12. capacitance 1 10 100 1,000 10,000 1 10 100 1000 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss
? 2017 ixys corporation, all rights reserved ixys ref: f_20n85x(s5-d901) 1-10-17-a IXFJ20N85X fig. 14. forward-bias safe operating area 0.01 0.1 1 10 100 10 100 1,000 v ds - volts i d - amperes t j = 150 o c t c = 25 o c sin g le pulse 25 s 100 s r ds( on ) limit 1ms 10ms 100ms dc fig. 15. maximum transient thermal impedance 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 13. output capacitance stored energy 0 5 10 15 20 25 0 100 200 300 400 500 600 700 800 900 v ds - volts e oss - microjoules
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