jiangsu changjiang electron ics technology co., ltd to-92l plastic-encapsulate transistors 2SC2482 transistor (npn) feature z high voltage :v ceo =300v z small collector output capacitance: c ob =3.0pf(typ) maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 7 v i c collector current -continuous 0.1 a p c collector power dissipation 0.9 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics(t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v(br) cbo i c = 100 a, i e =0 300 v collector-emitter breakdown voltage v(br) ceo i c = 3ma ,i b =0 300 v emitter-base breakdown voltage v(br) ebo i e = 100 a,i c =0 7 v collector cut-off current i cbo v cb = 240 v, i e =0 1.0 a collector cut-off current i ceo v cb = 220 v, i b =0 5.0 a emitter cut-off current i ebo v eb = 7v, i c =0 1.0 a dc current gain h fe v ce =10v, i c =20ma 30 150 collector-emitter saturation voltage v ce(sat) i c = 10ma, i b =1ma 1.0 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma 1.0 v transition frequency f t v ce =10v, i c =20ma,f=30mhz 50 mhz collector output capacitance cob v cb =20v, i e =0, f=1mhz 3 pf classification of h fe rank o y range 30-90 90-150 to-92l 1. emitter 2. collector 3. base j c ( t www.cj-elec.com 1 a,jun,2014 www.cj-elec.com c,mar,2016 a,jun,2011
symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.750 4.050 0.148 0.159 a1 1.280 1.580 0.050 0.062 b 0.380 0.550 0.015 0.022 b1 0.620 0.780 0.024 0.031 c 0.350 0.450 0.014 0.018 d 4.750 5.050 0.187 0.199 d1 4.000 0.157 e 7.850 8.150 0.309 0.321 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 13.800 14.200 0.543 0.559 - 1.600 0.063 0.000 0.300 0.000 0.012 h www.cj-elec.com 2 c,mar,2016
www.cj-elec.com 3 c,mar,2016
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