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| 2SC2482 transistor (npn) feature power dissipation p cm : 0.9 w (tamb=25 ) collector current i cm : 0.1 a collector-base voltage v (br)cbo : 300 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v(br) cbo ic= 100a , i e =0 300 v collector-emitter breakdown voltage v(br) ceo i c = 3 ma , i b =0 300 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 7 v collector cut-off current i cbo v cb = 240 v , i e =0 1 a collector cut-off current i ceo v cb = 220 v , i b =0 5 a emitter cut-off current i ebo v eb = 7 v , i c =0 1 a dc current gain h fe(1) v ce =10 v, i c = 20ma 30 150 collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 1 ma 1 v base-emitter saturation voltage v be(sat) i c = 10 ma, i b = 1 ma 1 v transition frequency f t v ce = 10 v, i c = 20ma f = 30mhz 50 mhz classification of h fe (1 ) rank o y range 30-90 90-150 to-92mod 1. emitter 2. collector 3. base 123 2SC2482 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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