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cystech electronics corp. spec. no. : c737g6 issued date : 2009.03.16 revised date : 2012.11.21 page no. : 1/9 MTN2604G6 cystek product specification n-channel enhancement mode power mosfet MTN2604G6 description the MTN2604G6 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the tsop-6 package is universally preferred for a ll commercial-industrial surface mount applications. features equivalent circuit ? simple drive requirement MTN2604G6 ? low on-resistance ? small package outline g gate s source d drain bv dss 30v i d 7a r dson@ v gs =10v, i d =7a 19m (typ.) r dson@ v gs =4.5v, i d =5a 26m (typ.) ? pb-free package absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current @v gs =4.5v, t a =25 c (note 1) i d 7 a continuous drain current @v gs =4.5v, t a =100 c (note 1) i d 4.4 a pulsed drain current (note 2, 3) i dm 20 a pd 2 w total power dissipation @ t a =25 c linear derating factor 0.016 w / c operating junction and storage temp erature range tj ; tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) rth,ja 62.5 c/w note : 1.surface mounted on 1 in2 copper pad of fr-4 board. 156 /w when mounted on minimum copper pad. 2.pulse width lim ited by maximum junc tion temperature. 3.pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c737g6 issued date : 2009.03.16 revised date : 2012.11.21 page no. : 2/9 MTN2604G6 cystek product specification electrical characteristics (tj=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0v, i d =250 a bv dss / tj - 0.02 - v/ reference to 25 , i d =250 a v gs(th) 1 - 3 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0v - - 1 v ds =24v, v gs =0v, tj=25 i dss - - 25 a v ds =24v, v gs =0v, tj=70 - 19 27 i d =7a, v gs =10v *r ds(on) - 26 40 m i d =5a, v gs =4.5v *g fs - 8 - s v ds =5v, i d =7a dynamic ciss - 745 - coss - 51 - crss - 58 - pf v ds =25v, v gs =0, f=1mhz t d(on) - 5 - t r - 8 - t d(off) - 18 - t f - 4 - ns v ds =15v, i d =1a, v gs =10v, r g =3.3 ? qg - 7 - qgs - 2.3 - qgd - 2.7 - nc v ds =24v, i d =4.8a, v gs =4.5v *pulse test : pulse width 300 s, duty cycle 2% source drain diode symbol min. typ. max. unit test conditions *v sd - 0.84 1.2 v i s =4.8a,v gs =0v *t rr - 15 - ns q rr - 7 - nc i s =4.8a,v gs =0v, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking MTN2604G6 tsop-6 (pb-free lead plating package) 3000 pcs / tape & reel 2604 cystech electronics corp. spec. no. : c737g6 issued date : 2009.03.16 revised date : 2012.11.21 page no. : 3/9 MTN2604G6 cystek product specification typical characteristics typical output characteristics 0 2 4 6 8 10 12 14 16 18 20 012345678910 v ds , drain-source voltage(v) i d , drain current(a) 10v 9v 8v 7v 6v 5v 4.5v 4v v gs = 2. 5v v gs =3v v gs =3.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =3v v gs =2.5v v gs =10v v gs =4v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 10 15 20 25 30 35 40 45 50 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , static drain-source on-state resistance(m) v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) v gs =4.5v, i d =4a i d =5a i d =4a v gs =10v, i d =5a cystech electronics corp. spec. no. : c737g6 issued date : 2009.03.16 revised date : 2012.11.21 page no. : 4/9 MTN2604G6 cystek product specification typical characteristics (cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0246810121416 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =4.8a v ds =24v v ds =20v v ds =15v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s 1s t a =25c, tj=150c, v gs =4.5v, r ja =62.5c/w single pulse r ds( on) limited maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =4.5v, r ja =62.5c/w cystech electronics corp. spec. no. : c737g6 issued date : 2009.03.16 revised date : 2012.11.21 page no. : 5/9 MTN2604G6 cystek product specification typical characteristics (cont.) transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =62.5 c/w cystech electronics corp. spec. no. : c737g6 issued date : 2009.03.16 revised date : 2012.11.21 page no. : 6/9 MTN2604G6 cystek product specification reel dimension cystech electronics corp. spec. no. : c737g6 issued date : 2009.03.16 revised date : 2012.11.21 page no. : 7/9 MTN2604G6 cystek product specification carrier tape dimension cystech electronics corp. spec. no. : c737g6 issued date : 2009.03.16 revised date : 2012.11.21 page no. : 8/9 MTN2604G6 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface. cystech electronics corp. spec. no. : c737g6 issued date : 2009.03.16 revised date : 2012.11.21 page no. : 9/9 MTN2604G6 cystek product specification tsop-6 dimension millimeters marking: 6-lead tsop-6 plastic surface mounted package cystek package code: g6 style: pin 1. drain (d) pin 2. drain (d) pin 3. gate (g) pin 4. source (s) pin 5. drain (d) pin 6. drain ( d ) 2604 device name date code inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.700 0.900 0.028 0.035 e 1.600 1.700 0.063 0.067 a1 0.000 0.100 0.000 0.004 e1 2.650 2.950 0.104 0.116 a2 0.700 0.800 0.028 0.031 e 0.95 (bsc) 0.037 (bsc) b 0.350 0.500 0.014 0.020 e1 1.90 (bsc) 0.075 (bsc) c 0.080 0.200 0.003 0.008 l 0.300 0.600 0.012 0.024 d 2.820 3.020 0.111 0.119 0 8 0 8 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . |
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