2011-12-19 1 SMBTA42/mmbta42 1 2 3 npn silicon high-voltage transistors ? low collector-emitter saturation voltage ? complementary types: smbta92 / mmbta92(pnp) ? pb-free (rohs compliant) package ? qualified according aec q101 type marking pin configuration package SMBTA42/mmbta42 s1d 1=b 2=e 3=c sot23 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 300 v collector-base voltage v cbo 300 emitter-base voltage v ebo 6 collector current i c 500 ma base current i b 100 total power dissipation- t s 74 c p tot 360 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 210 k/w 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation)
2011-12-19 2 SMBTA42/mmbta42 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 300 - - v collector-base breakdown voltage i c = 100 a, i e = 0 v (br)cbo 300 - - emitter-base breakdown voltage i e = 100 a, i c = 0 v (br)ebo 6 - - collector-base cutoff current v cb = 200 v, i e = 0 v cb = 200 v, i e = 0 , t a = 150 c i cbo - - - - 0.1 20 a emitter-base cutoff current v eb = 5 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 30 ma, v ce = 10 v h fe 25 40 40 - - - - - - - collector-emitter saturation voltage 1) i c = 20 ma, i b = 2 ma v cesat - - 0.5 v base emitter saturation voltage 1) i c = 20 ma, i b = 2 ma v besat - - 0.9 ac characteristics transition frequency i c = 10 mhz, v ce = 20 v, f = 100 mhz f t 50 70 - mhz collector-base capacitance v cb = 20 v, f = 1 mhz c cb - - 3 pf 1 pulse test: t < 300s; d < 2%
2011-12-19 3 SMBTA42/mmbta42 dc current gain h fe = ? ( i c ) v ce = 10 v ehp00844 smbta 42/43 10 10 ma h c 10 5 fe 10 3 1 10 0 5 10 10 10 -1 0 1 2 3 5 10 2 555 collector current i c = ? ( v be ) v ce = 10v ehp00843 smbta 42/43 10 0 v be 1.5 ma c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v 5 10 2 operating range i c = ? ( v ceo ) t a = 25c, d = 0 10 0 10 1 10 2 10 3 v v ce -1 10 0 10 1 10 2 10 3 10 ma i c 10 s 100 s 1 ms dc collector cutoff current i cbo = ? ( t a ) v cbo = 160 v ehp00842 smbta 42/43 10 0 c a 150 na cbo 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 t max typ 5 10 3
2011-12-19 4 SMBTA42/mmbta42 transition frequency f t = ? ( i c ) v ce = 10 v, f = 100 mhz ehp00839 smbta 42/43 10 mhz 10 10 ma f c 10 10 t 555 0123 10 3 2 10 1 5 collector-base capacitance c cb = ? ( v cb ) emitter-base capacitance c eb = ? ( v eb ) 0 4 8 12 16 v 22 v cb ( v eb 0 10 20 30 40 50 60 70 pf 90 c cb ( c eb ) ccb ceb total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 40 80 120 160 200 240 280 320 mw 400 p tot permissible pulse load r thjs = ? ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
2011-12-19 5 SMBTA42/mmbta42 permissible pulse load p totmax / p totdc = ? ( t p ) 10 ehp00840 smbta 42/43 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
2011-12-19 6 SMBTA42/mmbta42 package sot23 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel eh s bcw66 type code pin 1 0.8 0.9 0.9 1.3 0.8 1.2 0.25 m bc 1.9 -0.05 +0.1 0.4 0.1 2.9 0.95 c b 0...8? 0.2 a 0.1 max. 10? max. 0.08...0.15 1.3 0.1 10? max. m 2.4 0.15 0.1 1 a 0.15 min. 1) 1) lead width can be 0.6 max. in dambar area 12 3 3.15 4 2.65 2.13 0.9 8 0.2 1.15 pin 1 manufacturer 2005, june date code (ym)
2011-12-19 7 SMBTA42/mmbta42 edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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