1 elm51404fa - s 5 - g e neral description f eatures 1 2 3 single n-channel mosfet pin no. pin name 1 gate 2 source 3 drain pin configuration c ircuit s c - 70 (top vi ew) s g d maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit maximum junction - to - a mbient r ja 120 c /w parameter symbol limit unit drain - s ource voltage vds 3 0 v gate - s ource v oltag e vgs 12 v conti nuous drain current(tj=150 c) t a = 25 c id 3.6 a t a = 70 c 2 .6 pulsed d rain current idm 10 a power dissipation t c = 25 c pd 0.35 w t c = 70 c 0.22 j unction and storage temperature range tj , tstg - 55 to 150 c ? vds = 3 0v ? id = 3 . 6 a ? rds (on) = 8 2 m (vgs = 10 v) ? rds (on) = 9 0 m (vgs = 4 .5v) ? rds (on) = 1 02 m (vgs = 2 .5v) elm51404fa - s uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. t a = 25 c . u nless otherwise noted.
2 elm51404fa - s 5 - electrical characteristics single n-channel mosfet parameter symbol condition min. typ. max. unit static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 3 0 v zero g ate voltage drain current idss vds = 2 4 v, vgs = 0v 1 a t a = 8 5 c 30 gate - b ody leakage current ig s s vds = 0v , vgs = 1 2 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 0.3 1.2 v on s tate drain current i d ( on ) vgs = 4.5 v, vds = 5v 3 0 a static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, id = 3 . 6 a 77 82 m vgs = 4 .5v, id = 3.0 a 82 90 vgs = 2.5 v, id = 2 .2 a 93 102 forward transconductance gfs vds = 10 v, id = 6.1 a 20 s diode forward voltage vsd i s = 1. 7 a, vgs = 0v 0.8 1.2 v max. body - d iode continuous c urrent is 1.6 a dynamic parameters input capacitance c iss vgs = 0v, vds = 1 5 v, f = 1mh z 280 pf output capacitance c oss 40 pf reverse transfer capacitance c r ss 20 pf switching parameters total gate charge q g vgs = 4.5 v, vds = 1 5 v id = 3 . 6 a 2.3 3.0 nc gate - s ource charge q gs 1.0 nc gate - d rain charge q gd 0.6 nc turn - o n delay time t d (on) vgs = 10 v, vds = 1 5 v r l = 15 , id=1.0a rgen = 6 10 15 ns turn - o n rise t ime t r 1 2 20 ns turn - o ff delay time t d ( of f ) 15 25 ns turn - o ff fall t ime t f 10 15 ns t a = 25 c . u nless otherwise noted.
3 elm51404fa - s 5 - typical electrical and thermal characteristics single n-channel mosfet a f n 7 4 0 0 3 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a d e c . 2 0 1 1 p a g e 3 t y p i c a l c h a r a c t e r i s t i c s
4 elm51404fa - s 5 - single n-channel mosfet a f n 7 4 0 0 3 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a d e c . 2 0 1 1 p a g e 4 t y p i c a l c h a r a c t e r i s t i c s
5 elm51404fa - s 5 - single n-channel mosfet t est circuit and w aveform a f n 7 4 0 0 3 0 v n - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a d e c . 2 0 1 1 p a g e 5 t y p i c a l c h a r a c t e r i s t i c s
|
