DN350T05 npn small signal surface mount transistor features ? epitaxial planar die construction ? complementary pnp type available (dp350t05) ? ideal for medium power amplification and switching ? lead, halogen and antimony free, rohs compliant "green" device (notes 2, 3 and 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see diagram ? terminals: finish ? matte tin finish annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? marking information: k3s, see page 3 ? ordering & date code information: see page 3 ? weight: 0.008 grams (approximate) sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm a e j l top view m b c c b h g d k e maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 350 v collector-emitter voltage v ceo 350 v emitter-base voltage v ebo 5.0 v continuous collector current i c 500 ma power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient (note 1) r ja 417 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0. 062 inch; pad layout as shown on diodes inc. suggested pad layou t document ap02001, which can be found on our website at http ://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. halogen and antimony free. 3. diode?s inc.?s ?green? policy can be found on our website at http://www.diodes.c om/products/lead_free/index.php. 4. product is manufactured with green molding compound and does not contain halogens or sb 2 o 3 fire retardants. ds30625 rev. 8 - 2 1 of 4 www.diodes.com DN350T05 ? diodes incorporated
electrical characteristics @t a = 25c unless otherwise specified ds30625 rev. 8 - 2 2 of 4 www.diodes.com DN350T05 ? diodes incorporated characteristic symbol min max unit test condition off characteristics (note 5) collector-base breakdown voltage v (br)cbo 350 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 350 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5.0 ? v i e = 10 a, i c = 0 collector cutoff current i cbo ? 50 na v cb = 250v, i e = 0 collector cutoff current i ebo ? 50 na v ce = 5v, i c = 0 on characteristics (note 5) dc current gain h fe 20 30 30 20 15 ? ? 200 200 ? ? i c = 1.0ma, v ce = 10v i c = 10ma, v ce = 10v i c = 30ma, v ce = 10v i c = 50ma, v ce = 10v i c = 100ma, v ce = 10v collector-emitter saturation voltage v ce(sat) ? ? ? ? 0.30 0.35 0.50 1.0 v i c = 10ma, i b = 1.0ma i c = 20ma, i b = 2.0ma i c = 30ma, i b = 3.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) ? ? ? 0.75 0.80 0.90 v i c = 10ma, i b = 1.0ma i c = 20ma, i b = 2.0ma i c = 30ma, i b = 3.0ma base-emitter on voltage v be(on) ? 2.0 v i c = 100ma, v ce = 10v small signal characteristics output capacitance c obo ? 7.0 pf v cb = 20v, f = 1.0mhz, i e = 0 transition frequency f t 50 ? mhz v ce = 10v, i c = 20ma notes: 5. short duration pulse test used to minimize self-heating effect. 100 150 200 250 300 50 0 11 0 0 50 100 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1, max power dissipation vs. ambient temperature a 150 200 250 300 350 400 0 1 0 0 i , collector current (ma) fig. 2, c dc current gain vs. collector current
i , collector current (ma) fig. 3, collector-emitter saturation voltage vs. collector current c v, c o lle c t o r e m i t t e r saturation voltage (v) ce(sat) 0.01 1 10 0.1 10 20 30 40 50 60 70 80 90 100 0.1 0 10 20 30 40 50 60 80 90 70 100 1 i , collector current (ma) fig. 4, base emitter saturation voltage vs. collector current c v , base emitter saturation voltage (v) be(sat) 1 23 4 5 c , c a p a c i t a n c e (p f ) v , reverse voltage (v) fig. 6, capacitance vs. reverse voltage r 60 50 40 30 10 20 1 10 100 i , collector current (ma) fig. 5, base-emitter on voltage vs. collector current c 0.1 0.2 0.3 0.4 0.5 0.9 0.8 0.7 0.6 v , base emitter on voltage (v) be(on) ordering information (note 6) ds30625 rev. 8 - 2 3 of 4 www.diodes.com DN350T05 ? diodes incorporated device packaging shipping sot-23 3000/tape & reel DN350T05-7 notes: 6. for packaging details, go to our websit e at http://www.diodes.c om/datasheets/ap02007.pdf. marking information k3s = product type marking code ym = date code marking y = year ex: s = 2005 m = month ex: 9 = september k3s ym date code key year 2005 2006 2007 2008 2009 2010 2011 2012 code s t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d
ds30625 rev. 8 - 2 4 of 4 www.diodes.com DN350T05 ? diodes incorporated important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.
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