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cha3688aqdg rohs compliant ref. : dscha3688aqdg1035 - 07 feb 11 1 / 18 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - bp46 - 91401 orsay cedex france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 12.5 - 30ghz low noise amplifier gaas monolithic microwave ic in smd leadless package description the cha3688aqdg is a three - stage self - biased wide band monolithic low noise amplifier monolithic circuit . the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in rohs compliant smd package. main features main characteristics tamb. = + 25c symbol parameter min typ max unit freq frequency range 12.5 30 ghz gain linear gain 21 26 db nf noise figure 2.1 2.5 db oip3 3rd order intercept point (16 - 30ghz) 24 26 dbm ums a3688a yyww ? ? ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg
cha3688aqdg 12.5 - 30ghz low noise amplifier ref. : dscha3688aqdg1035 - 07 feb 11 2 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 main characteristics (low current configuration) tamb = +25c, vd1=vd2=vd3= +4v and pads b, d not connected symbol parameter min typ max unit freq frequency range 12.5 30 ghz gain linear gain (12.5 - 24ghz) linear gain (24.5 - 30ghz) 22 20 25 23 db db g gain flatness (12.5 - 24ghz) gain flatness (24.5 - 30ghz) 1.5 2 db db nf noise figure (12.5 - 16ghz) noise figure (16.5 - 24ghz) noise figure (24.5 - 30ghz) 2.3 2.0 2. 2 2.6 2.3 2.5 db db db s11 input return loss (12.5 - 16ghz) (27 C 30ghz) input return loss (16.5 - 26.5ghz) 2.5:1 2.0:1 3.0:1 2.5:1 db db s22 output return loss 2.0:1 2.5:1 db oip3 3rd order intercept point @ pout scl < 8dbm from 16 to 30ghz 23 25 dbm p1db output power at 1db gain compression 13 14 dbm id drain bias current 85 115 ma vd drain bias voltage 4 v these values are representative of onboard measurements as defined on the drawing in paragraph "evaluation mother board". main characteristics ( high current configuration) tamb = +25c, vd1=vd2=vd3= +4v and pads b, d grounded symbol parameter min typ max unit freq frequency range 12.5 30 ghz gain linear gain (12.5 - 24ghz) linear gain (24.5 - 30ghz) 23 2 1 2 6 2 4 db db g gain flatness 2 db nf noise figure (12.5 - 16ghz) noise figure (16.5 - 24ghz) noise figure (24.5 - 30ghz) 2.3 2.0 2. 2 2.6 2.3 2.5 db db db s11 input return loss (12.5 - 16ghz) (27 C
12.5 - 30ghz low noise amplifier cha3688aqdg ref. : dscha3688aqdg1035 - 07 feb 11 3 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +3 3 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vd drain bias voltage 4.5 v v pin rf input power 10 dbm tj junction temperature (2) 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +15 0 c (1) operation of this device above anyone of these parameters may cause permanent damage. typical bias conditions tamb.= + 25c symbol pad n o parameter values unit v d1 23 dc drain voltage 4 v v d2 21 dc drain voltage 4 v v d3 19 dc drain voltage 4 v b 9 dc gate voltage connected to ground or not d 11 dc gate voltage
cha3688aqdg 12.5 - 30ghz low noise amplifier ref. : dscha3688aqdg1035 - 07 feb 11 4 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back - side interface (tcase) as shown below. the system maximum temperature must be adjusted in order to guarantee that tcase remains below than the maximum value specified in the next table. so, the system pcb must be designed to comply with this requirement. a de - rating must be applied on the dissipated power if the tcase temperature cannot be maintained below than the maximum temperature specified (see the curve pdiss. max) in order to guarantee the nominal device life time (mttf).
12.5 - 30ghz low noise amplifier cha3688aqdg ref. : dscha3688aqdg1035 - 07 feb 11 5 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +3 3 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical package sij par ameters for low current configuration tamb = + 25c, vd1=vd2=vd3= +4v, id = 90 ma and pads b, d not connected freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 2.0 - 1.3 66 - 63.8 - 33 - 67.2 - 134 - 1.4 61 3.0 - 1.2 14 - 62.8 61 - 57.0 24 - 1.5 0 4.0 - 1.1 - 34 - 62.9 140 - 57.9 30 - 1.7 - 60 5.0 - 1.0 - 79 - 68.4 99 - 31.8 - 63 - 2.4 - 120 6.0 - 0.9 - 124 - 61.8 - 70 - 13.3 - 143 - 4.8 - 178 7.0 - 1.3 - 178 - 59.6 71 1.2 118 - 9.9 126 8.0 - 2.6 117 - 61.0 - 1 9.1 24 - 19.3 87 9.0 - 4.8 42 - 62.0 - 111 15.9 - 62 - 23.9 - 14 10.0 - 5.6 - 27 - 59.3 164 19.5 - 144 - 14.5 - 159 11.0 - 5.3 - 83 - 53.6 134 22.0 142 - 12.9 136 12.0 - 4.8 - 128 - 52.4 94 23.7 74 - 14.1 89 13.0 - 4.8 - 167 - 55.4 43 24.8 13 - 15.3 58 14.0 - 5.2 157 - 51.0 33 25.8 - 44 - 15.3 27 15.0 - 6.1 122 - 56.9 36 26.8 - 101 - 13.7 - 6 16.0 - 7.6 91 - 57.5 176 27.0 - 157 - 12.2 - 40 17.0 - 9.4 56 - 47.2 - 157 27.0 151 - 10.3 - 70 18.0 - 12.0 26 - 51.8 92 27.1 101 - 9.0 - 111 19.0 - 14.5 - 6 - 49.0 67 27.3 49 - 8.8 - 149 20.0 - 17.2 - 28 - 58.8 30 26.8 0 - 9.6 - 179 21.0 - 20.2 - 34 - 49.9 34 26.4 - 46 - 10.4 149 22.0 - 16.7 - 69 - 49.0 40 25.9 - 93 - 13.6 130 23.0 - 14.6 - 107 - 47.2 20 25.3 - 140 - 15.7 125 24.0 - 13.3 - 146 - 48.4 - 5 24.7 176 - 15.7 117 25.0 - 12.2 - 175 - 48.2 - 3 24.2 129 - 17.2 122 26.0 - 10.5 161 - 50.6 - 12 23.7 86 - 15.7 118 27.0 - 8.6 130 - 47.7 2 23.2 38 - 13.7 102 28.0 - 7.7 91 - 45.5 - 17 22.9 - 9 - 13.2 79 29.0 - 7.7 53 - 47.8 47 22.0 - 60 - 13.4 39 30.0 - 6.4 2 - 37.9 - 51 21.1 - 116 - 14.9 - 5 31.0 - 4.9 - 55 - 42.9 - 24 18.5 - 176 - 14.0 - 55 32.0 - 4.4 - 106 - 37.5 - 65 14.5 134 - 11.3 - 96 33.0 - 3.1 - 141 - 44.7 - 110 10.9 84 - 7.8 - 133 34.0 - 2.1 - 172 - 43.4 - 69 6.4 38 - 5.1 - 162 35.0 - 1.2 162 - 46.5 27 1.3 - 6 - 3.5 173 36.0 - 1.2 139 - 34.6 - 70 - 4.4 - 44 - 2.3 150 37.0 - 1.2 122 - 33.9 - 90 - 10.7 - 73 - 1.6 131 38.0 - 1.2 105 - 32.7 - 103 - 17.8 - 98 - 1.3 113 39.0 - 1.6 90 - 38.1 - 114 - 24.8 - 113 - 1.6 93 40.0 - 2.6 71 - 39.0 - 118 - 32.8 - 85 - 2.8 75
cha3688aqdg 12.5 - 30ghz low noise amplifier ref. : dscha3688aqdg1035 - 07 feb 11 6 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical package sij parameters for high current configuration tamb = +25c, vd1=vd2=vd3= +4v, id = 115 ma and pads b, d grounded freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 2.0 - 1.3 66 - 75.4 159 - 77.1 115 - 1.4 61 3.0 - 1.2 14 - 62.1 - 168 - 56.8 7 - 1.5 0 4.0 - 1.1 - 34 - 74.0 65 - 57.0 6 - 1.7 - 61 5.0 - 1.0 - 79 - 79.6 - 146 - 30.6 - 61 - 2.6 - 120 6.0 - 0.9 - 124 - 84.9 160 - 12.4 - 144 - 5.0 - 178 7.0 - 1.3 - 178 - 63.2 24 1.8 118 - 9.8 128 8.0 - 2.7 117 - 64.3 31 9.9 23 - 20.6 92 9.0 - 4.9 42 - 73.9 84 16.6 - 62 - 27.6 - 18 10.0 - 5.7 - 27 - 56.5 - 150 20.2 - 145 - 13.9 - 168 11.0 - 5.3 - 83 - 57.7 126 22.7 142 - 12.4 130 12.0 - 4.8 - 128 - 54.9 86 24.3 74 - 13.5 84 13.0 - 4.7 - 167 - 55.2 30 25.4 13 - 14.8 53 14.0 - 5.1 158 - 53.6 116 26.4 - 44 - 15.4 21 15.0 - 6.2 122 - 48.5 - 47 27.2 - 100 - 13.0 - 8 16.0 - 7.4 91 - 57.7 140 27.6 - 156 - 11.6 - 44 17.0 - 9.4 54 - 55.6 135 27.6 152 - 9.8 - 75 18.0 - 11.6 27 - 51.6 119 27.7 103 - 8.7 - 112 19.0 - 14.0 - 5 - 51.0 75 27.9 52 - 8.5 - 150 20.0 - 16.4 - 29 - 48.8 58 27.5 2 - 9.0 179 21.0 - 19.3 - 48 - 49.5 59 27.2 - 44 - 10.0 148 22.0 - 16.8 - 72 - 48.5 29 26.7 - 92 - 13.0 128 23.0 - 15.0 - 109 - 47.6 25 26.2 - 139 - 15.5 117 24.0 - 13.7 - 149 - 49.0 - 17 25.4 177 - 15.9 112 25.0 - 12.0 - 176 - 47.4 3 24.9 131 - 18.0 116 26.0 - 10.3 158 - 48.6 2 24.5 87 - 16.6 113 27.0 - 9.0 129 - 47.1 - 24 23.9 38 - 14.4 102 28.0 - 8.3 91 - 38.4 - 21 23.4 - 7 - 14.2 75 29.0 - 7.5 51 - 42.0 16 22.8 - 58 - 14.2 39 30.0 - 6.3 2 - 40.8 - 34 22.0 - 115 - 14.9 - 6 31.0 - 5.1 - 57 - 41.5 - 56 19.4 - 175 - 14.6 - 54 32.0 - 4.5 - 107 - 37.7 - 58 15.3 134 - 11.4 - 98 33.0 - 3.0 - 142 - 43.9 - 115 11.8 84 - 7.8 - 133 34.0 - 2.1 - 173 - 50.3 - 135 7.2 38 - 5.2 - 163 35.0 - 1.2 162 - 39.6 - 15 2.1 - 6 - 3.6 172 36.0 - 1.2 139 - 34.6 - 45 - 3.9 - 45 - 2.3 148 37.0 - 1.4 122 - 32.7 - 105 - 10.2 - 74 - 1.6 129 38.0 - 1.3 105 - 38.2 - 109 - 16.9 - 92 - 1.4 112 39.0 - 1.7 90 - 38.3 - 142 - 22.1 - 91 - 1.8 92 40.0 - 2.4 70 - 39.4 - 105 - 25.1 - 73 - 2.1 75
12.5 - 30ghz low noise amplifier cha3688aqdg ref. : dscha3688aqdg1035 - 07 feb 11 7 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +3 3 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical board measurements tamb = +25c, vd1=vd2=vd3= +4v id = 85 ma pads b, d not connected (low current configuration) measurements are given in the package access planes. losses are de - embedded. gain and return losses versus frequency noise figure versus frequency
cha3688aqdg 12.5 - 30ghz low noise amplifier ref. : dscha3688aqdg1035 - 07 feb 11 8 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical board measurements tamb = +25c, vd1=vd2=vd3= +4v id = 115 ma pads b, d grounded (high current configuration) measurements are given in the package access planes. losses are de - embedded. gain and return losses versus frequency noise figure versus frequency
12.5 - 30ghz low noise amplifier cha3688aqdg ref. : dscha3688aqdg1035 - 07 feb 11 9 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +3 3 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical board measurements measurements are given in the package access planes . losses are de - embedded. tamb = +25c, vd1=vd2=vd3= +4v id = 85 /1 15 ma output power - 1db for low and high current configurations 115ma 85ma
cha3688aqdg 12.5 - 30ghz low noise amplifier ref. : dscha3688aqdg1035 - 07 feb 11 10 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical board measurements tamb = - 40c / +25c / +85 c , vd1=vd2=vd3= +4v measurements are given in the packages access plans. losses are de - embedded. gain measurement for low current configuration pads b, d not connected gain measurement for high current configuration pads b, d grounded - 40c +25c +85c - 40c +25c +85c 12 14 16 18 20 22 24 26 28 30 12 14 16 18 20 22 24 26 28 30 dbs21 (db) frequency (ghz) 12 14 16 18 20 22 24 26 28 30 12 14 16 18 20 22 24 26 28 30 dbs21 (db) frequency (ghz)
12.5 - 30ghz low noise amplifier cha3688aqdg ref. : dscha3688aqdg1035 - 07 feb 11 11 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +3 3 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical board measurements tamb = - 40c / +25c / +8 5 c , vd1=vd2=vd3= +4v measurements are given in the connectors access plans. losses are not de - embedded. output power - 1db measurement for low current configuration pads b, d not connected output power - 1db measurement for high current configuration pads b, d grounded 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 pout - 1db (dbm) frequency (ghz) 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 pout - 1db (dbm) frequency (ghz)
cha3688aqdg 12.5 - 30ghz low noise amplifier ref. : dscha3688aqdg1035 - 07 feb 11 12 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical board measurements tamb = - 40c / +25c / +85 c , vd1=vd2=vd3= +4v id = 85 ma pads b, d not connected (low current configuration) measurements are given in the connectors access plans. losses are not de - embedded. output ip3 versus input power @ 1 2 ghz output ip3 versus input power @ 2 0 ghz output ip3 versus input power @ 2 8 ghz output ip3 versus input power @ 30ghz 12ghz 20ghz 28ghz 30ghz - 40c +25c +85c - 40c +25c +85c - 40c +25c +85c - 40c +25c +85c
12.5 - 30ghz low noise amplifier cha3688aqdg ref. : dscha3688aqdg1035 - 07 feb 11 13 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +3 3 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical board measurements tamb = - 40c / +25c / +8 5 c , vd1=vd2=vd3= +4v id = 1 15 ma pads b, d = gnd ( high current configuration ) measurements are given in the connectors access plans. losses are not de - embedded. output ip3 versus input power @ 1 2 ghz output ip3 versus input power @ 2 0 ghz output ip3 versus input power @ 2 8 ghz output ip3 versus input power @ 30ghz 12ghz 20ghz 28ghz 30ghz - 40c +25c +85c - 40c +25c +85c - 40c +25c +85c - 40c +25c +85c
cha3688aqdg 12.5 - 30ghz low noise amplifier ref. : dscha3688aqdg1035 - 07 feb 11 14 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 package outline (1) matt tin, lead free (green) 1 - nc 9 - b 17 - gnd units : mm 2 - gnd 10 - nc 18 - nc from the standard : jedec mo - 220 3 - gnd 11 - d 19 - vd3 (vggd) 4 - rf in 12 - nc 20 - nc 25 - gnd 5 - gnd 13 - gnd 21 - vd2 6 - gnd 14 - gnd 22 - nc 7 - nc 15 - rf out 23 - vd1 8 - nc 16 - gnd 24 - nc (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board. ensure that the pcb board is designed to provide the best possible ground to the package.
12.5 - 30ghz low noise amplifier cha3688aqdg ref. : dscha3688aqdg1035 - 07 feb 11 15 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +3 3 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 definition of the sij reference planes the reference planes used for sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). the input and output reference planes are located at 3.18mm offset (input wise and output wise re spectively) from this axis. then, the given sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "evaluation mother board". 3.18 3.18
cha3688aqdg 12.5 - 30ghz low noise amplifier ref. : dscha3688aqdg1035 - 07 feb 11 16 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 evaluation mother board compatible with the proposed footprint. based on typically ro4003 / 8mils or equivalent. using a micro - strip to coplanar transition to access the package. recommended for the implementation of this prod uct on a module board. decoupling capacitors of 10nf 10% are recommended f or all dc accesses. see application note an0017 for details. v d1 gnd vd2 vd3 b gnd d
12.5 - 30ghz low noise amplifier cha3688aqdg ref. : dscha3688aqdg1035 - 07 feb 11 17 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +3 3 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 chip biasing options this chip is self - biased, and flexibility is provided by the access to number of pads. the internal dc electrical schematic is given in order to use these pads in a safe way. the requirement is not to exceed vds = 3.5volt (internal drain to source voltage ). we propose two standard biasings: low noise and low consumption: vd = 4v and b & d leads non connected (nc). idd = 85ma & pout - 1db = 14dbm typical. low noise and higher output power: vd = 4v and b, d grounded idd = 115ma & pout - 1db = 15dbm typical. note due to esd protection circuits, rfin and rfout are dc grounded and an external capacitance might be requested to isolate the product from external voltage that could be present on the rf accesses. the dc connections (vd1, vd2 and vd3) do not include any d ecoupling capacitor in package, therefore it is mandatory to provide a good external dc decoupling (typically 10nf) on the pc board, as close as possible to the package.
cha3688aqdg 12.5 - 30ghz low noise amplifier ref. : dscha3688aqdg1035 - 07 feb 11 18 / 18 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suitable reflow process can be used. for further details, see application note an0017. recommended environmental management refer to the application note an0019 available at http://www.ums - gaas.com for environmental data on ums package products. recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd s ensitivity and handling recommendations for the ums package products. ordering information qfn 4x4 rohs compliant package: cha3688aqdg /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties wh ich may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical compon ents in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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