q?v~zy??q?v?_ra]w??qcabcq HFS8N70S 2 1 3 ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 22 nc (typ.) ? extended safe operating area ? lower r ds(on)
7 \ s # 9 gs =10v ? 100% avalanche tested thermal resistance characteristics features absolute maximum ratings t c =25 e unless otherwise specified HFS8N70S 700v n-channel mosfet symbol parameter value units v dss drain-source voltage 700 v i d drain current ? continuous (t c = 25 zq 7.0* a drain current ? continuous (t c = 100 zq 4.0* a i dm drain current ? pulsed (note 1) 28.0* a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 190 mj i ar avalanche current (note 1) 7.0 a e ar repetitive avalanche energy (note 1) 14.7 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 zq qqqqqqqqqqqqqqqqqqqqqqqqqqq^qu???q????qcfq 48 w 0.38 w/ q t j , t stg operating and storage temperature range -55 to +150 q t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 q symbol parameter typ. max. units r jc junction-to-case -- 2.6 `?q r ja junction-to-ambient -- 62.5 dec 2012 * drain current limited by maximum junction temperature bv dss = 700 v r ds(on) typ
i d = 7.0 a to-220f 1.gate 2. drain 3. source
q?v~zy??q?v?_ra]w??qcabcq HFS8N70S notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=7.3mh, i as =7.0a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |