vishay siliconix SIE802DF document number: 72985 s09-1337-rev. e, 13-jul-09 www.vishay.com 1 n-channel 30-v (d-s) mosfet features ? halogen-free accordin g to iec 61249-2-21 definition ? trenchfet ? gen ii power mosfet ? ultra low thermal resistance using top- exposed polarpak ? package for double-sided cooling ? leadframe-based new encapsulated package - die not exposed - same layout regardless of die size ? low q gd /q gs ratio helps prevent shoot-through ? 100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ?vrm ? dc/dc conversion: low-side ? synchronous rectification product summary v ds (v) r ds(on) ( ) e i d (a) a q g (typ.) silicon limit package limit 30 0.0019 at v gs = 10 v 202 60 50 nc 0.0026 at v gs = 4.5 v 173 60 package drawing www.vishay.com/doc?72945 to p v ie w bottom v ie w top s u rface is connected to pins 1, 5, 6, and 10 polarpak 10 d s s g d d s s g d 1 432 5 67 8 9 d dsg d 5 4 3 2 1 6 7 8 9 10 orderin g information: sie 8 02df -t1-e3 (lead (p b )-free) sie 8 02df -t1-ge3 (lead (p b )-free and halogen-free) for related documents www.vishay.com/ppg?72985 n -channel mosfet g d s notes: a. package limited is 60 a. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ) . the polarpak is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufactu ring. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate botto m side solder interconnection. e. rework conditions: manual soldering with a sold ering iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 202 (silicon limit) a 60 a (package limit) t c = 70 c 60 a t a = 25 c 42.7 b, c t a = 70 c 34.2 b, c pulsed drain current i dm 100 continuous source-drain diode current t c = 25 c i s 60 a t a = 25 c 4.3 b, c single pulse avalanche current l = 0.1 mh i as 50 avalanche energy e as 125 mj maximum power dissipation t c = 25 c p d 125 w t c = 70 c 80 t a = 25 c 5.2 b, c t a = 70 c 3.3 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260
www.vishay.com 2 document number: 72985 s09-1337-rev. e, 13-jul-09 vishay siliconix SIE802DF notes: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady stat e conditions is 68 c/w. c. measured at source pin ( on the side of the package). notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, b t 10 s r thja 20 24 c/w maximum junction-to-case (drain top) steady state r thjc (drain) 0.8 1 maximum junction-to-case (source) a, c r thjc (source) 2.2 2.7 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 32.2 mv/c v gs(th) temperature coefficient v gs(th) /t j - 6.4 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.2 2.7 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 25 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 23.6 a 0.0016 0.0019 v gs = 4 .5 v, i d = 21.3 a 0.0021 0.0026 forward transconductance a g fs v ds = 15 v, i d = 23.6 a 156 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 7000 pf output capacitance c oss 1200 reverse transfer capacitance c rss 500 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 23.6 a 105 160 nc v ds = 15 v, v gs = 4.5 v, i d = 23.6 a 50 75 gate-source charge q gs 21 gate-drain charge q gd 14 gate resistance r g f = 1 mhz 1.1 1.65 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 4.5 v, r g = 1 45 70 ns rise time t r 195 300 turn-off delay time t d(off) 45 70 fall time t f 20 30 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 25 40 rise time t r 20 30 turn-off delay time t d(off) 65 100 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 60 a pulse diode forward current a i sm 100 body diode voltage v sd i s = 10 a 0.8 1.2 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 55 85 ns body diode reverse recovery charge q rr 66 105 nc reverse recovery fall time t a 25 ns reverse recovery rise time t b 30
document number: 72985 s09-1337-rev. e, 13-jul-09 www.vishay.com 3 vishay siliconix SIE802DF typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 20 40 60 8 0 100 0.0 0.1 0.2 0.3 0.4 v gs = 10 v thr u 4 v 3 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 0 204060 8 0 100 v gs = 10 v i d - drain c u rrent (a) v gs = 4.5 v r ) n o ( s d ( ) e c n a t s i s e r - n o - 0.0015 0.0017 0.0019 0.0021 0.0023 0 . 002 5 0 2 4 6 8 10 0204060 8 0 100 120 i d = 23.6 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v gs v ds = 24 v v ds = 15 v transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 c t c = 125 c - 55 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d c rss 0 2000 4000 6000 8 000 10 000 0 5 10 15 20 25 30 c oss c iss v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c 0.6 0. 8 1.0 1.2 1.4 1 . 6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v , 10 v i d = 23.6 a t j - j u nction temperat u re (c) r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n (
www.vishay.com 4 document number: 72985 s09-1337-rev. e, 13-jul-09 vishay siliconix SIE802DF typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s 1.0 1 10 100 0.0 0.2 0.4 0.6 0. 8 t j = 25 c t j = 150 c 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 2.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j - temperat u re (c) v ) h t ( s g ) v ( on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0246 8 10 i d = 23.6 a v gs - gate-to-so u rce v oltage ( v ) r ) n o ( s d ( ) e c n a t s i s e r - n o e c r u o s - o t - n i a r d - t a = 25 c t a = 125 c 0.0040 0.0035 0.0030 0.0025 0.0020 0.0015 0.0010 0 30 50 10 20 ) w ( r e w o p time (s) 40 10 1000 1 0.1 0.01 100 safe operating area, junction-to-ambient 1000 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 limited b y r ds(on) * 1 ms 10 ms 100 ms dc 1 s 10 s v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
document number: 72985 s09-1337-rev. e, 13-jul-09 www.vishay.com 5 vishay siliconix SIE802DF typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 50 100 150 200 250 0 25 50 75 100 125 150 i d ) a ( t n e r r u c n i a r d - t c - case temperat u re (c) package limited power derating, junction-to-case 0 20 40 60 8 0 100 120 140 25 50 75 100 125 150 t c - case temperat u re (c) ) w ( n o i t a p i s s i d r e w o p
www.vishay.com 6 document number: 72985 s09-1337-rev. e, 13-jul-09 vishay siliconix SIE802DF typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72985 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 110 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 55 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-case (drain top) 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.02 single p u lse normalized thermal transient impedance, junction-to-source 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.02 single p u lse
document number: 72945 www.vishay.com revision: 11-aug-08 1 package information vishay siliconix polarpak? option l v ie w a v ie w a (bottom v ie w ) prod u ct datasheet/information page contain links to applica b le package dra w ing. detail z 5 d 4 ss 32 g 1 d d 1 10 d d s gs 4 23 (top v ie w ) z 5 6 d 9 g s 8 7 s 10 d gs s 7 9 8 6 d a a m4 m4 m3 m3 m2 m1 t5 t4 t1 t2 t3 t3 t5 d1 d a1 c a e1 e 0.26 0.20 0.33 0.5 8 0.13 0.25 0.39 b 5 b 5 b 5 k4 k4 k1 k2 k3 k3 p1 p1 b 4 b 4 b 1 h1 h4 b 3 h3 h1 h2 b 1 b 2 p1 p1
www.vishay.com document number: 72945 2 revision: 11-aug-08 package information vishay siliconix notes millimeters govern over inches. millimeters inches dim min. nom. max. min. nom. max. a 0.75 0.80 0.85 0.030 0.031 0.033 a1 0.00 - 0.05 0.000 - 0.002 b1 0.48 0.58 0.68 0.019 0.023 0.027 b2 0.41 0.51 0.61 0.016 0.020 0.024 b3 2.19 2.29 2.39 0.086 0.090 0.094 b4 0.89 1.04 1.19 0.035 0.041 0.047 b5 0.23 0.33 0.43 0.009 0.013 0.017 c 0.20 0.25 0.30 0.008 0.010 0.012 d 6.00 6.15 6.30 0.236 0.242 0.248 d1 5.74 5.89 6.04 0.226 0.232 0.238 e 5.01 5.16 5.31 0.197 0.203 0.209 e1 4.75 4.90 5.05 0.187 0.193 0.199 h1 0.23 - - 0.009 - - h2 0.45 - 0.56 0.018 - 0.022 h3 0.31 0.41 0.51 0.012 0.016 0.020 h4 0.45 - 0.56 0.018 - 0.022 k1 4.22 4.37 4.52 0.166 0.172 0.178 k2 1.08 1.13 1.18 0.043 0.044 0.046 k3 1.37 - - 0.054 - - k4 0.24 - - 0.009 - - m1 4.30 4.50 4.70 0.169 0.177 0.185 m2 3.43 3.58 3.73 0.135 0.141 0.147 m3 0.22 - - 0.009 - - m4 0.05 - - 0.002 - - p1 0.15 0.20 0.25 0.006 0.008 0.010 t1 3.48 3.64 4.10 0.137 0.143 0.161 t2 0.56 0.76 0.95 0.022 0.030 0.037 t3 1.20 - - 0.047 - - t4 3.90 - - 0.153 - - t5 0 0.18 0.36 0.000 0.007 0.014 0 10 12 0 10 12 ecn: t-08441-rev. c, 11-aug-08 dwg: 5946
application note 826 vishay siliconix www.vishay.com document number: 73491 6 revision: 21-jan-08 application note recommended minimum pads for polarpak ? option l and s 0.955 (0.03 8 ) 0.410 (0.016) 0.510 (0.020) 0.510 (0.020) 7.300 (0.2 8 7) 0.955 (0.03 8 ) 0. 8 95 (0.035) 0. 8 95 (0.035) 0.5 8 0 (0.023) 2.290 (0.090) 0.510 (0.020) 0.5 8 0 (0.023) 4.520 (0.17 8 ) 6.310 (0.24 8 ) + recommended minim u m for polarpak option l and s dimensions in mm/(inches) n o external traces w ithin broken lines dot indicates gate pin (part marking) return to index
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
