d1113 tkim tc-00003073/n1208ea msim tc-00001718 no.a1346-1/5 http://onsemi.com semiconductor components industries, llc, 2013 december, 2013 PCP1103 bipolar transistor ? 30v, ? 1.5a, low v ce ( sat ) pnp single pcp stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applications ? dc / dc converters, relay drivers, lamp drivers, motor drivers, igbt gate drivers features ? adoption of mbit process ? large current capacity ? low collector to emitter saturation voltage ? high speed switching ? high allowable power dissipation ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector to base voltage v cbo --30 v collector to emitter voltage v ceo --30 v emitter to base voltage v ebo -- 5 v collector current i c --1.5 a collector current (pulse) i cp -- 5 a continued on next page. package dimensions unit : mm (typ) 7007b-004 ordering number : ena1346a product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collecto r 3 : emitter pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view PCP1103-td-h rf lot no. 2 3 1
PCP1103 no.a1346-2/5 continued from preceding page. parameter symbol conditions ratings unit base current i b --300 ma collector dissipation p c when mounted on ceramic substrate (450mm 2 0.8mm) 1.3 w tc=25 c 3.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb = --30v, i e =0a --0.1 a emitter cutoff current i ebo v eb = --4v, i c =0a --0.1 a dc current gain h fe v ce = --2v, i c = --100ma 200 560 gain-bandwidth product f t v ce = --10v, i c = --300ma 450 mhz output capacitance cob v cb = --10v, f=1mhz 9 pf collector to emitter saturation voltage v ce (sat) i c = --0.75a, i b = --15ma --250 --375 mv base to emitter saturation voltage v be (sat) i c = --0.75a, i b = --15ma --0.85 --1.2 v collector to base breakdown voltage v (br)cbo i c = --10 a, i e =0a --30 v collector to emitter breakdown voltage v (br)ceo i c = --1ma, r be = --30 v emitter to base breakdown voltage v (br)ebo i e = --10 a, i c =0a --5 v turn-on time t on see speci ed test circuit. 35 ns storage time t stg 115 ns fall time t f 30 ns switching time test circuit ordering information device package shipping memo PCP1103-td-h pcp 1,000pcs./reel pb free and halogem free r b v cc = --12v i c =20i b1 = --20i b2 = --0.75a + 50 input output 820 f pw=50 s i b1 d.c. 1% i b2 r l i c -- v ce collector to emitter voltage, v ce -- v collector current, i c -- a i c -- v be collector current, i c -- a base to emitter voltage, v be -- v --50ma --40ma --30ma --20ma --2.0 --1.4 --1.2 --1.6 --1.8 --1.0 --0.4 --0.2 --0.6 --0.8 0 0 --0.4 --0.8 --0.9 --1.0 --0.2 --0.6 --0.3 --0.7 --0.1 --0.5 i b =0ma it14106 --2ma - -4ma --6ma --10ma --8ma v ce = --2v ta=75 c 25 c --25 c --1.6 --1.2 --0.6 --0.8 --1.4 --1.0 --0.2 --0.4 0 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 it14107
PCP1103 no.a1346-3/5 v ce (sat) -- i c collector to emitter saturation voltage, v ce (sat) -- v collector current, i c -- a collector to emitter saturation voltage, v ce (sat) -- v v ce (sat) -- i c collector current, i c -- a base to emitter saturation voltage, v be (sat) -- v v be (sat) -- i c collector current, i c -- a s o a collector to emitter voltage, v ce -- v collector current, i c -- a h fe -- i c dc current gain, h fe collector current, i c -- a collector dissipation, p c -- w p c -- ta ambient temperature, ta -- c f t -- i c cob -- v cb collector current, i c -- a gain-bandwidth product, f t -- mhz collector to base voltage, v cb -- v output capacitance, cob -- pf --0.1 7 2 5 3 2 --1.0 --10 7 7 2 5 3 5 3 --0.01 --0.01 --0.1 25 35 72 --1.0 5 37 2 --10 5 37 23 i c = --1.5a 10ms 1ms 100ms dc operation (ta=25 c) i cp = --5a <10 s it14112 --1.0 3 --0.1 t a=--25 c 75 c 3 2 7 5 2 23 5 2 7 --1.0 323 57 --0.01 i c / i b =50 it14111 25c --0.1 23 5 2 7 --1.0 323 57 --0.01 --0.1 7 5 3 3 2 7 2 5 --0.01 ta=75 c 25 c --25 c it14109 i c / i b =20 100 s 500 s ta=75 c --25 c v ce = --2v it14108 100 7 7 2 5 3 5 7 --0.01 3 25 2 --0.1 7 323 5 --1.0 25 c 0 1.6 1.0 1.2 1.4 1.3 0.8 0.6 0.4 0.2 20 060 40 80 100 140 120 160 it14113 1000 3 2 5 7 23 57 23 2 57 --0.01 --1.0 --0.1 100 3 2 5 7 3 2 v ce = --10v it01679 100 7 5 3 2 7 5 3 2 10 23 57 0.1 1.0 23 57 10 23 5 it01681 f=1mhz --0.1 23 5 2 7 --1.0 323 57 --0.01 --0.1 7 5 3 2 2 --1.0 7 5 3 2 --0.01 ta=75 c 25 c --25 c it14110 i c / i b =50 when mounted on ceramic substrate (450mm 2 0.8mm) ta=25 c single pulse when mounted on ceramic substrate (450mm 2 0.8mm)
PCP1103 no.a1346-4/5 p c -- tc collector dissipation, p c -- w case temperature, tc -- c 0 4.0 2.5 3.0 3.5 2.0 1.5 1.0 0.5 20 060 40 80 100 140 120 160 it14114
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