2013. 10. 25 1/5 semiconductor technical data KMB2D0N60SA n-ch trench mosfet revision no : 2 general description this trench mosfet has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for portable equipment. features h v dss =60v, i d =2a h drain-source on resistance r ds(on) =160m ? (max.) @ v gs =10v r ds(on) =220m ? (max.) @ v gs =4.5v h super high dense cell design maximum rating (ta=25 ? ? ) pin connection (top view) characteristic symbol n-ch unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v drain current dc@ta=25 ? i d 2.0 a dc@ta=70 ? 1.6 pulsed i dp 10 drain-source-diode forward current i s 1.0 a drain power dissipation ta=25 ? p d 1.25 w ta=70 ? 0.8 maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal resistance, junction to ambient r thja 100 ? /w note>*surface mounted on 1 ? 1 fr4 board, t ? 5sec downloaded from: http:///
2013. 10. 25 2/5 KMB2D0N60SA revision no : 2 electrical characteristics (ta=25 ? ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i ds =250 a, v gs =0v, 60 - - v drain cut-off current i dss v gs =0v, v ds =60v - - 0.5 a v gs =0v, v ds =60v, tj=55 ? - - 10 gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1.5 - 3.0 v drain-source on resistance r ds(on) * v gs =10v, i d =2a - 125 160 m ? v gs =4.5v, i d =1.7a - 155 220 on-state drain current i d(on) * v gs =10v, v ds ? 4.5v 6 - - a v gs =4.5v, v ds ? 4.5v 4 - - forward transconductance g fs * v ds =4.5v, i d =2.0a - 4.6 - s dynamic input capaclitance c iss v ds =30v, f=1mhz, v gs =0v - 240 - pf ouput capacitance c oss - 30 - reverse transfer capacitance c rss - 16 - total gate charge q g * v ds =30v, v gs =10v, i d =2a - 4.8 10 nc gate-source charge q gs * - 0.8 - gate-drain charge q gd * - 1.0 - turn-on delat time t d(on) * v dd =30v, v gs =4.5v i d =1a, r g =6 ? - 7 15 ns turn-on rise time t r * - 10 20 turn-off deley time t d(off) * - 17 35 turn-off fall time t f * - 6 15 source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i s =1a - 0.77 1.2 v note 1> * pulse test : pulse width <300 k , duty cycle < 2% downloaded from: http:///
2013. 10. 25 3/5 KMB2D0N60SA revision no : 2 downloaded from: http:///
2013. 10. 25 4/5 KMB2D0N60SA revision no : 2 downloaded from: http:///
2013. 10. 25 5/5 KMB2D0N60SA revision no : 2 downloaded from: http:///
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