dm t8012lk3 document number: ds 37918 rev. 3 - 2 1 of 7 www.diodes.com february 2017 ? diodes incorporated advanced information dm t8012lk3 80v n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t c = + 25c 8 0v 1 7 m ? @ v gs = 10 v 44 a 2 2 m ? @ v gs = 4. 5 v 38 a description and applications this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. ? synchronous rectifier ? backlighting ? power management functions ? dc - dc converters features ? low r ds(on) C ensures on state losses are minimized ? high conversion efficiency ? low input capacitance ? fast switching speed ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: to252 (dpak) ? case material: molded pl astic, green molding compound; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin a nnealed over copper leadframe ; solderable per mil - std - 202, method 208 ? weight: 0. 33 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm t 8 01 2 l k3 - 13 to252 (dpak) 2 , 5 00 /tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complaint . all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tota l br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information equivalent circuit pin out top view = manufacturer s marking t8012l = product type marking code yyww = date code marking yy = last digit of year (ex: 1 7 = 201 7 ) ww = week code (01 to 53) top view yyww t8012l t o252 (dpak) t o252 (dpak) green
dm t8012lk3 document number: ds 37918 rev. 3 - 2 2 of 7 www.diodes.com february 2017 ? diodes incorporated advanced information dm t8012lk3 maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 8 0 v gate - source voltage v gss 20 v continuous drain current (note 5 ) v gs = 10 v t c = + 25 c t c = + 10 0 c i d 44 28 a pulsed drain current ( 10 s p ulse, d uty c ycle = 1% ) i dm 80 a maximum continuous body diode f orward current (note 5 ) i s 3 a pulsed drain current ( 10 s p ulse, d uty c ycle = 1% ) i s m 80 a avalanche current , l=0.1mh i a s 11.6 a avalanche energy , l=0.1mh e a s 10.2 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) p d 2. 7 w thermal resistance, junction to ambient (note 5 ) r ja 47 c/w total power dissipation (note 6 ) p d 50 w thermal resistance, junction to case (note 6 ) r j c 2.5 c/w operating and storage temperature range t j, t stg - 55 to +1 50 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 8 0 - - v v gs = 0v, i d = 1m a zero gate voltage drain current i dss - - 1 a v ds = 64 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 20 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 1 - 3 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) - 12 1 7 m ? v gs = 10 v, i d = 12 a - 1 8.2 22 v gs = 4. 5 v, i d = 6 a diode forward voltage v sd - 0.9 1.2 v v gs = 0v, i s = 2 5 a dynamic characteristics (note 8 ) input capacitance c iss - 1 , 94 9 - pf v ds = 40 v, v gs = 0v , f = 1 mhz output capacitance c oss - 177 - reverse transfer capacitance c rss - 10 - gate r esistance r g - 0.7 - ? v ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v gs = 4.5 v ) q g - 15 - nc v ds = 40 v, i d = 12 a total gate charge ( v gs = 10 v ) q g - 34 - gate - source charge q gs - 6 - gate - drain charge q gd - 4.5 - turn - on delay time t d( on ) - 4.9 - ns v dd = 40 v, v gs = 10 v, i d = 12 a , r g = 1.6 turn - on rise time t r - 3.8 - turn - off delay time t d( off ) - 16.5 - turn - off fall time t f - 3.5 - body diode reverse recovery time t rr - 30.2 - n s i f = 12 a, di/dt = 10 0a/s body diode reverse recovery charge q rr - 34.6 - n c notes: 5. device mounted on fr - 4 substrate pc board, 2oz copper, with 1 - inch square copper plate. 6. device mounted on infinite heat sink and mea s ured by thermal couple attached on bottom hea t sink of package . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm t8012lk3 document number: ds 37918 rev. 3 - 2 3 of 7 www.diodes.com february 2017 ? diodes incorporated advanced information dm t8012lk3 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =3.5v v gs =4.0v v gs =4.5v v gs =5.0v v gs =6.0v v gs =10.0v 0 5 10 15 20 25 30 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5.0v - 55 25 85 125 150 0.00 0.01 0.01 0.02 0.02 0.03 0.03 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? ) i d , drain - source current (a) figure 3. typical on - resistance vs drain current and gate voltage v gs =4.5v v gs =10.0v 0.01 0.015 0.02 0.025 0.03 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance (m ? ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =12a i d =6a 0.005 0.01 0.015 0.02 0.025 0.03 0 5 10 15 20 25 30 r ds(on) , drain - source on - resistance ( ? ) i d , drain current (a) figure 5. typical on - resistance vs drain current and temperature v gs =10v - 55 25 85 125 150 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ) figure 6. on - resistance variation with temperature v gs =4.5v, i d =20a v gs =10v, i d =20a
dm t8012lk3 document number: ds 37918 rev. 3 - 2 4 of 7 www.diodes.com february 2017 ? diodes incorporated advanced information dm t8012lk3 0 0.01 0.02 0.03 0.04 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - esistance ( ? ) t j , junction temperature ( ) figure 7. on - resistance variation with temperature v gs =10v, i d =20a v gs =4.5v, i d =20a 0.5 1 1.5 2 2.5 3 3.5 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate theshold voltage (v) t j , junction temperature ( ) figure 8. gate theshold variation vs temperature i d =1ma i d =250 a 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs current t a = - 55 t a =25 v gs =0v t a =85 t a =125 t a =150 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 v gs (v) q g (nc) figure 11. gate charge v ds =40v, i d =12a 0.1 1 10 100 0.1 1 10 100 1,000 t = 150c j(ma x) t = 25c a v = 10v gs single pulse dut on 1 * mrp board r ds(on) limited p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w p = 1s w i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area
dm t8012lk3 document number: ds 37918 rev. 3 - 2 5 of 7 www.diodes.com february 2017 ? diodes incorporated advanced information dm t8012lk3 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r jc (t)=r(t) * r jc r jc =2.48
dm t8012lk3 document number: ds 37918 rev. 3 - 2 6 of 7 www.diodes.com february 2017 ? diodes incorporated advanced information dm t8012lk3 package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0. 64 0. 88 0. 7 83 b2 0. 7 6 1.14 0. 95 b3 5.21 5.46 5.3 3 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. dimensions value (in mm) c 4.572 x 1.0 60 x1 5.632 y 2.6 0 0 y1 5.700 y 2 10.700 b3 e l3 d l4 b2(2x) b(3x) e c a 71 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
dm t8012lk3 document number: ds 37918 rev. 3 - 2 7 of 7 www.diodes.com february 2017 ? diodes incorporated advanced information dm t8012lk3 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents und er the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any cus tomer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless aga inst all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauth orized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated wi th such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life su pport diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life sup port devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or t o affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be p rovided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyr ight ? 201 7 , diodes incorporated www.diodes.com
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