t4 - lds - 0128, rev . 3 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 1 of 4 1N6845U3 compliant 45 volts, 30 amp s chottky rectifier ceramic surface mount qualified per mil - prf - 19500/ 6 82 qualified levels: jan, jantx, and jantxv description this low - profile 1n684 5 u3 schottky rectifier device is military qualified up to a jan txv level for high - reliability applications. u3 (smd - 0. 5) package important: for the latest information, visit our website http://www.microsemi.c om . features ? surface mount equivalent of jedec registered 1n 684 5. ? low p rofile c eramic smd. ? jan, jantx, jantxv qualifications available per mil - prf - 19500/ 6 82 . ? rohs compliant by design . applications / benefits ? high s urge r ating. ? low r everse l eakag e current. ? low f orward v oltage. ? low power losses . maximum ratings @ t c = +25 o c unless otherwise noted msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: ( 978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 websit e: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to + 150 o c thermal resistance junction - to - case r ? jc 2.0 o c /w working peak reverse voltage v rwm 45 v average rectified output current @ t c = +55 c (1) i o 30 a non - repetitive sinusoidal surge current @ t p = 8.3 ms i fsm 30 0 a note: 1. derate i o as shown in fi gure 2 where derating starts at t c = +55 c for rated v rwm . higher temperature derating curves also apply to progressively lower voltages as shown. downloaded from: http:///
t4 - lds - 0128, rev . 3 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 2 of 4 1N6845U3 mechanical and packaging ? case: ceramic and g old over n ickel p lated s teel . ? terminals: gold over n ickel p lated t ungsten/ c opper . ? marking: part number, date code, a = a node . ? polarity: see s chematic on last p age. ? weight: approximately 0.9 grams . ? see p ackage d imensions on last page. part nomenclature jan 1n684 5 u3 reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jede c type number (s ee electrical characteristic s t able ) smd - 0.5 surface mount symbols & definitions symbol definition c j junction capacitance: the junction capacitance in pf at a specified frequency (typi cally 1mhz) and specified voltage. i f forward current: the forward current dc value, no alternating component. i r reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. t j junction temperature: the temperature of a semiconductor junction. v f forward voltage: the forward voltage the device will exhibit at a specified current (typic ally shown as maximum value). v r reverse voltage: the reverse voltage dc value, no alternating component. el ectrical characteristics @ t c = + 25 o c unless otherwise noted parameters / test conditions symbol min. max. unit forward voltage* i f = 10 a (pk) i f = 20 a (pk) i f = 4 0 a (pk) i f = 10 a (pk) , t c = +100 o c i f = 20 a (pk) , t c = +1 00 c i f = 10 a (pk) , t c = -55 c v f 0.65 0.72 0.86 0.55 0.67 0.78 v reverse current v r = 45 v v r = 45 v, t c = +1 00 c i r 0.1 1 0.0 ma junction capacitance v r = 5 v f = 1 mhz v sig = 50 mv (p - p) c j 8 00 pf * pulse test: pulse width 300 sec, d uty cycle 2% . downloaded from: http:///
t4 - lds - 0128, rev . 3 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 3 of 4 1N6845U3 graphs forward current in amps figure 1 1n6845 u3 typical v f at i o t c (c) (case) figure 2 temperature C c urrent derating curve v f in volts sinewave operation maximum io rating (a) downloaded from: http:///
t4 - lds - 0128, rev . 3 ( 6/ 13 /13 ) ?201 3 microsemi corporation page 4 of 4 1N6845U3 package dimensions no tes: 1. dimensions are in inches. 2. millimeters are given for information onl y. 3. in accordance w ith asme y14.5m, diameters are equivalent to x sy mbolog y. schematic sy mbol dimensions inch millimeters min max min max bl 0 .395 0 .405 10.03 10.29 bw 0 .291 0 .301 7.39 7.65 ch 0 .112 0 .124 2.84 3.15 lh 0 .010 0 .020 0.25 0.51 ll1 0 .220 0 .230 5.59 5.84 ll2 0 .115 0 .125 2.92 3.18 ls1 0 .150 bsc 3.81 bsc ls2 0 .075 bsc 1.91 bsc lw1 0 .281 0 .291 7.14 7.39 lw2 0 .090 0 .100 2.29 2.54 q1 0 .030 - 0.76 - q2 0 .030 - 0.76 - term 1 common cathode term 2 anode (see schematic) term 3 anode (see schematic ) downloaded from: http:///
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